FR2336802A1 - Nouvelle structure de triac - Google Patents
Nouvelle structure de triacInfo
- Publication number
- FR2336802A1 FR2336802A1 FR7539754A FR7539754A FR2336802A1 FR 2336802 A1 FR2336802 A1 FR 2336802A1 FR 7539754 A FR7539754 A FR 7539754A FR 7539754 A FR7539754 A FR 7539754A FR 2336802 A1 FR2336802 A1 FR 2336802A1
- Authority
- FR
- France
- Prior art keywords
- zones
- layer
- triangles
- doped
- new
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000003486 chemical etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/80—Bidirectional devices, e.g. triacs
Landscapes
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7539754A FR2336802A1 (fr) | 1975-12-24 | 1975-12-24 | Nouvelle structure de triac |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7539754A FR2336802A1 (fr) | 1975-12-24 | 1975-12-24 | Nouvelle structure de triac |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2336802A1 true FR2336802A1 (fr) | 1977-07-22 |
| FR2336802B1 FR2336802B1 (fr) | 1982-02-19 |
Family
ID=9164170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7539754A Granted FR2336802A1 (fr) | 1975-12-24 | 1975-12-24 | Nouvelle structure de triac |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2336802A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2566582A1 (fr) * | 1984-06-22 | 1985-12-27 | Silicium Semiconducteur Ssc | Dispositif bidirectionnel de protection declenche par avalanche |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3317746A (en) * | 1963-12-10 | 1967-05-02 | Electronic Controls Corp | Semiconductor device and circuit |
| FR2156819A1 (fr) * | 1971-10-22 | 1973-06-01 | Rca Corp | |
| FR2328289A1 (fr) * | 1975-10-16 | 1977-05-13 | Silec Semi Conducteurs | Triac declenchable selon les quatre modes de polarisation |
-
1975
- 1975-12-24 FR FR7539754A patent/FR2336802A1/fr active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3317746A (en) * | 1963-12-10 | 1967-05-02 | Electronic Controls Corp | Semiconductor device and circuit |
| FR2156819A1 (fr) * | 1971-10-22 | 1973-06-01 | Rca Corp | |
| FR2328289A1 (fr) * | 1975-10-16 | 1977-05-13 | Silec Semi Conducteurs | Triac declenchable selon les quatre modes de polarisation |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2566582A1 (fr) * | 1984-06-22 | 1985-12-27 | Silicium Semiconducteur Ssc | Dispositif bidirectionnel de protection declenche par avalanche |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2336802B1 (fr) | 1982-02-19 |
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