FR2345253A1 - Creuset pour la fabrication d'un lingot de materiau cristallin - Google Patents
Creuset pour la fabrication d'un lingot de materiau cristallinInfo
- Publication number
- FR2345253A1 FR2345253A1 FR7608344A FR7608344A FR2345253A1 FR 2345253 A1 FR2345253 A1 FR 2345253A1 FR 7608344 A FR7608344 A FR 7608344A FR 7608344 A FR7608344 A FR 7608344A FR 2345253 A1 FR2345253 A1 FR 2345253A1
- Authority
- FR
- France
- Prior art keywords
- mat
- crucible
- mfg
- layer
- gallium arsenide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 abstract 1
- 239000000835 fiber Substances 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 230000000750 progressive effect Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D41/00—Casting melt-holding vessels, e.g. ladles, tundishes, cups or the like
- B22D41/02—Linings
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7608344A FR2345253A1 (fr) | 1976-03-23 | 1976-03-23 | Creuset pour la fabrication d'un lingot de materiau cristallin |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7608344A FR2345253A1 (fr) | 1976-03-23 | 1976-03-23 | Creuset pour la fabrication d'un lingot de materiau cristallin |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2345253A1 true FR2345253A1 (fr) | 1977-10-21 |
| FR2345253B1 FR2345253B1 (fr) | 1980-09-26 |
Family
ID=9170786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7608344A Granted FR2345253A1 (fr) | 1976-03-23 | 1976-03-23 | Creuset pour la fabrication d'un lingot de materiau cristallin |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2345253A1 (fr) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1988005836A1 (fr) * | 1987-02-09 | 1988-08-11 | Tsl Group Plc | Procede d'amelioration de la resistance a l'affaissement d'un element fabrique a partir de quartz fondu |
| FR2614321A1 (fr) * | 1987-04-27 | 1988-10-28 | Europ Propulsion | Cartouche en materiaux composites pour dispositif d'elaboration de monocristaux. |
| EP0338914A1 (fr) * | 1988-04-20 | 1989-10-25 | Commissariat A L'energie Atomique | Procédé et creuset de solidification de matériaux, et application à la cristallogénèse de semi-conducteurs |
| EP0329485A3 (fr) * | 1988-02-19 | 1990-07-18 | R.A. Barnes Inc. | Revêtement de fours à creuset et de poches de transfert et méthode pour appliquer ce revêtement |
| US5337800A (en) * | 1992-09-09 | 1994-08-16 | Cook Arnold J | Reactive coating |
| EP0529963A3 (fr) * | 1991-08-22 | 1995-06-14 | Texas Instruments Inc | |
| EP0848087A1 (fr) * | 1996-12-12 | 1998-06-17 | Commissariat A L'energie Atomique | Dispositif et procédé de cristallogenèse |
| EP0949358A3 (fr) * | 1998-02-26 | 2002-01-02 | Mitsubishi Materials Corporation | Moule et procédé pour la fabrication des lingots de silicium |
| RU2380461C1 (ru) * | 2008-10-22 | 2010-01-27 | Открытое акционерное общество "Государственный научно-исследовательский и проектный институт редкометаллической промышленности "ГИРЕДМЕТ"(ОАО"ГИРЕДМЕТ"), RU | Способ получения полупроводниковых кристаллов типа aiibvi |
-
1976
- 1976-03-23 FR FR7608344A patent/FR2345253A1/fr active Granted
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1988005836A1 (fr) * | 1987-02-09 | 1988-08-11 | Tsl Group Plc | Procede d'amelioration de la resistance a l'affaissement d'un element fabrique a partir de quartz fondu |
| FR2614321A1 (fr) * | 1987-04-27 | 1988-10-28 | Europ Propulsion | Cartouche en materiaux composites pour dispositif d'elaboration de monocristaux. |
| EP0290322A1 (fr) * | 1987-04-27 | 1988-11-09 | Societe Europeenne De Propulsion | Cartouche en matériaux composites pour dispositif d'élaboration de monocristaux |
| US5132145A (en) * | 1987-04-27 | 1992-07-21 | Societe Anonyme | Method of making composite material crucible for use in a device for making single crystals |
| EP0329485A3 (fr) * | 1988-02-19 | 1990-07-18 | R.A. Barnes Inc. | Revêtement de fours à creuset et de poches de transfert et méthode pour appliquer ce revêtement |
| EP0338914A1 (fr) * | 1988-04-20 | 1989-10-25 | Commissariat A L'energie Atomique | Procédé et creuset de solidification de matériaux, et application à la cristallogénèse de semi-conducteurs |
| FR2630459A1 (fr) * | 1988-04-20 | 1989-10-27 | Commissariat Energie Atomique | Procede et creuset de solidification de materiaux, et application a la cristallogenese de semi-conducteurs |
| EP0529963A3 (fr) * | 1991-08-22 | 1995-06-14 | Texas Instruments Inc | |
| US5337800A (en) * | 1992-09-09 | 1994-08-16 | Cook Arnold J | Reactive coating |
| EP0848087A1 (fr) * | 1996-12-12 | 1998-06-17 | Commissariat A L'energie Atomique | Dispositif et procédé de cristallogenèse |
| FR2757184A1 (fr) * | 1996-12-12 | 1998-06-19 | Commissariat Energie Atomique | Dispositif et procede de cristallogenese |
| US5932005A (en) * | 1996-12-12 | 1999-08-03 | Commissariat A L'energie Atomique | Crystallogenesis device and process |
| EP0949358A3 (fr) * | 1998-02-26 | 2002-01-02 | Mitsubishi Materials Corporation | Moule et procédé pour la fabrication des lingots de silicium |
| US6732992B2 (en) | 1998-02-26 | 2004-05-11 | Mitsubishi Materials Corporation | Mold for producing silicon ingot and method for fabricating the same |
| RU2380461C1 (ru) * | 2008-10-22 | 2010-01-27 | Открытое акционерное общество "Государственный научно-исследовательский и проектный институт редкометаллической промышленности "ГИРЕДМЕТ"(ОАО"ГИРЕДМЕТ"), RU | Способ получения полупроводниковых кристаллов типа aiibvi |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2345253B1 (fr) | 1980-09-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CA | Change of address | ||
| CD | Change of name or company name | ||
| ST | Notification of lapse |