JPS548200A - Lowering method for coefficient of thermal expansion of oxide single crystal - Google Patents

Lowering method for coefficient of thermal expansion of oxide single crystal

Info

Publication number
JPS548200A
JPS548200A JP7404977A JP7404977A JPS548200A JP S548200 A JPS548200 A JP S548200A JP 7404977 A JP7404977 A JP 7404977A JP 7404977 A JP7404977 A JP 7404977A JP S548200 A JPS548200 A JP S548200A
Authority
JP
Japan
Prior art keywords
coefficient
thermal expansion
single crystal
oxide single
lowering method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7404977A
Other languages
Japanese (ja)
Other versions
JPS611400B2 (en
Inventor
Fumio Shimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7404977A priority Critical patent/JPS548200A/en
Publication of JPS548200A publication Critical patent/JPS548200A/en
Publication of JPS611400B2 publication Critical patent/JPS611400B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To lower the coefficient of thermal expansion of an oxide single crystal such as LiNbO3 by growing the crystal and heat treating it at a high temp. in an O2 atmosphere for a fixed time to fill the O2 voids in the crystal lattice with 0 atoms.
JP7404977A 1977-06-21 1977-06-21 Lowering method for coefficient of thermal expansion of oxide single crystal Granted JPS548200A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7404977A JPS548200A (en) 1977-06-21 1977-06-21 Lowering method for coefficient of thermal expansion of oxide single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7404977A JPS548200A (en) 1977-06-21 1977-06-21 Lowering method for coefficient of thermal expansion of oxide single crystal

Publications (2)

Publication Number Publication Date
JPS548200A true JPS548200A (en) 1979-01-22
JPS611400B2 JPS611400B2 (en) 1986-01-16

Family

ID=13535926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7404977A Granted JPS548200A (en) 1977-06-21 1977-06-21 Lowering method for coefficient of thermal expansion of oxide single crystal

Country Status (1)

Country Link
JP (1) JPS548200A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55104997A (en) * 1979-02-01 1980-08-11 Agency Of Ind Science & Technol Converting method for lithium niobate crystal into single domain
US5972834A (en) * 1995-04-27 1999-10-26 Nippon Sanso Corporation Carbon adsorbent, manufacturing method therefor, gas separation method and device therefor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6478796A (en) * 1987-09-22 1989-03-24 Nippon Spindle Mfg Co Ltd Printed book feed-in method in printed book puncher

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55104997A (en) * 1979-02-01 1980-08-11 Agency Of Ind Science & Technol Converting method for lithium niobate crystal into single domain
US5972834A (en) * 1995-04-27 1999-10-26 Nippon Sanso Corporation Carbon adsorbent, manufacturing method therefor, gas separation method and device therefor

Also Published As

Publication number Publication date
JPS611400B2 (en) 1986-01-16

Similar Documents

Publication Publication Date Title
JPS52100600A (en) Stably storable liquid polyisocyanate with carbodiimide radical and process for producing same
SE8004717L (en) SET TO MAKE AN AMORPH, MAGNETIC ALLOY
JPS51144574A (en) Method of growing silicon crystal by pulling up
JPS5576000A (en) High electroconductivity lithium nitride crystal* its manufacture and control method for said electroconductivity
JPS5477063A (en) Method of reducing damage of crystal when producing nndoping silicon by neutron irradiation
JPS51142975A (en) Production method of semiconductor devices
Golovchiner Changes in the austenite lattice parameter during the martensitic transformation in steel
JPS538495A (en) Boiling water type atomic plant and its operating method
JPS5347035A (en) Combustion control method for furnace or the like
JPS539279A (en) Annealing method for metallic oxide single crystal
IL58876A0 (en) Heat treated superalloy single crystal article and method for producing it
Nikitenko et al. Effect of Inversion of Dislocation Gliding Direction on the Characteristics of the Dislocation Mobility in Germanium Single Crystals
JPS5296864A (en) Method of transforming slice of polycrystal semiconductor into slice of huge crystal semiconductor
JPS575055B2 (en)
JPS55158718A (en) Temperature characteristic control method for piezoelectric oscillator
JPS5381727A (en) Heat resisting inorganic fiber and method of producing same
TR20835A (en) PROCEDURE AND INSTALLATION FOR COOLING GAS AND GRANUELING THE CUERUF IN THE SAME TIME
JPS5211858A (en) Crystal growth method
JPS535100A (en) Method of making single crystal gadlinium gallium
JPS55141659A (en) Atom concentration measuring method of iron in silicon crystal
JPS5387164A (en) Heat traetment method of compound crystal
SU596922A1 (en) Method of stabilization of metal temperature in intermittent-action heating furnaces
JPS5387983A (en) Crystal growing device
JPS5391571A (en) Growth method for semiconductor crystal
MW1075A1 (en) Method of increasing the sucrose content of growing plant