FR2350937A1 - Procede de retrait selectif de silice portee par un substrat - Google Patents

Procede de retrait selectif de silice portee par un substrat

Info

Publication number
FR2350937A1
FR2350937A1 FR7714786A FR7714786A FR2350937A1 FR 2350937 A1 FR2350937 A1 FR 2350937A1 FR 7714786 A FR7714786 A FR 7714786A FR 7714786 A FR7714786 A FR 7714786A FR 2350937 A1 FR2350937 A1 FR 2350937A1
Authority
FR
France
Prior art keywords
substrate
removal process
process carried
silica removal
selective silica
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR7714786A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Plasma Corp
INT PLASMA CORP
Original Assignee
International Plasma Corp
INT PLASMA CORP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Plasma Corp, INT PLASMA CORP filed Critical International Plasma Corp
Publication of FR2350937A1 publication Critical patent/FR2350937A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
FR7714786A 1976-05-14 1977-05-13 Procede de retrait selectif de silice portee par un substrat Pending FR2350937A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68637376A 1976-05-14 1976-05-14

Publications (1)

Publication Number Publication Date
FR2350937A1 true FR2350937A1 (fr) 1977-12-09

Family

ID=24756042

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7714786A Pending FR2350937A1 (fr) 1976-05-14 1977-05-13 Procede de retrait selectif de silice portee par un substrat

Country Status (8)

Country Link
US (1) US4127437A (fr)
JP (1) JPS6048902B2 (fr)
CH (1) CH614808A5 (fr)
DE (1) DE2721086A1 (fr)
FR (1) FR2350937A1 (fr)
GB (1) GB1539700A (fr)
IT (1) IT1083827B (fr)
NL (1) NL7705320A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0054164A1 (fr) * 1980-12-16 1982-06-23 International Business Machines Corporation Procédé pour aplanir du dioxyde de silicium à surface non-planaire pour dispositifs semiconducteurs
EP0020144A3 (en) * 1979-05-31 1982-12-01 Fujitsu Limited Method of producing a semiconductor device

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2802976C2 (de) * 1978-01-24 1980-02-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren und Vorrichtung zur Herstellung von Durchbrüchen (Löchern) in Glasplatten, vorzugsweise mit feinsten Strukturen
JPS5562773A (en) * 1978-11-06 1980-05-12 Seiko Epson Corp Preparation of semiconductor device
NL7906996A (nl) * 1979-09-20 1981-03-24 Philips Nv Werkwijze voor het reinigen van een reaktor.
JPS56162831A (en) * 1980-05-19 1981-12-15 Mitsubishi Electric Corp Forming method for electrode and wiring layer
US4325182A (en) * 1980-08-25 1982-04-20 General Electric Company Fast isolation diffusion
JPS57190320A (en) * 1981-05-20 1982-11-22 Toshiba Corp Dry etching method
US4506005A (en) * 1983-05-10 1985-03-19 Gca Corporation Method of catalytic etching
JPS617639A (ja) * 1984-06-22 1986-01-14 Toshiba Corp 半導体薄膜の分解装置
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US5044314A (en) * 1986-10-15 1991-09-03 Advantage Production Technology, Inc. Semiconductor wafer processing apparatus
DE68928402T2 (de) * 1988-12-27 1998-03-12 Toshiba Kawasaki Kk Verfahren zur Entfernung einer Oxidschicht auf einem Substrat
KR930005440B1 (ko) * 1989-10-02 1993-06-21 다이닛뽕 스쿠린 세이소오 가부시키가이샤 절연막의 선택적 제거방법
US5087323A (en) * 1990-07-12 1992-02-11 Idaho Research Foundation, Inc. Fine line pattern formation by aerosol centrifuge etching technique
US5294568A (en) * 1990-10-12 1994-03-15 Genus, Inc. Method of selective etching native oxide
JP2833946B2 (ja) * 1992-12-08 1998-12-09 日本電気株式会社 エッチング方法および装置
KR0170902B1 (ko) * 1995-12-29 1999-03-30 김주용 반도체 소자의 제조방법
US6153358A (en) * 1996-12-23 2000-11-28 Micorn Technology, Inc. Polyimide as a mask in vapor hydrogen fluoride etching and method of producing a micropoint
US6090683A (en) 1997-06-16 2000-07-18 Micron Technology, Inc. Method of etching thermally grown oxide substantially selectively relative to deposited oxide
US6165853A (en) * 1997-06-16 2000-12-26 Micron Technology, Inc. Trench isolation method
US6022485A (en) 1997-10-17 2000-02-08 International Business Machines Corporation Method for controlled removal of material from a solid surface
US6740247B1 (en) 1999-02-05 2004-05-25 Massachusetts Institute Of Technology HF vapor phase wafer cleaning and oxide etching
US6544842B1 (en) * 1999-05-01 2003-04-08 Micron Technology, Inc. Method of forming hemisphere grained silicon on a template on a semiconductor work object
KR100381011B1 (ko) 2000-11-13 2003-04-26 한국전자통신연구원 멤즈소자 제조용 미세구조체를 고착없이 띄우는 방법
JP5102467B2 (ja) * 2006-06-29 2012-12-19 東京エレクトロン株式会社 基板処理方法
CN118402042A (zh) * 2021-12-24 2024-07-26 Ａｇｃ株式会社 制造具有凹部结构的构件的方法和具有凹部结构的构件
EP4614550A1 (fr) * 2022-11-02 2025-09-10 Agc Inc. Procédé permettant de fabriquer un élément présentant une structure concave, et élément présentant une structure concave
JPWO2024247461A1 (fr) * 2023-05-31 2024-12-05
WO2026005055A1 (fr) * 2024-06-28 2026-01-02 Ａｇｃ株式会社 Procédé de fabrication d'un élément ayant une structure évidée

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3535137A (en) * 1967-01-13 1970-10-20 Ibm Method of fabricating etch resistant masks
US3494768A (en) * 1967-05-29 1970-02-10 Gen Electric Condensed vapor phase photoetching of surfaces
US3471291A (en) * 1967-05-29 1969-10-07 Gen Electric Protective plating of oxide-free silicon surfaces
US3520687A (en) * 1967-05-29 1970-07-14 Gen Electric Etching of silicon dioxide by photosensitive solutions
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process
US3935117A (en) * 1970-08-25 1976-01-27 Fuji Photo Film Co., Ltd. Photosensitive etching composition
US3867216A (en) * 1972-05-12 1975-02-18 Adir Jacob Process and material for manufacturing semiconductor devices
JPS5539903B2 (fr) * 1972-10-19 1980-10-14
US3992208A (en) * 1973-03-12 1976-11-16 Fuji Photo Film Co., Ltd. Photo-sensitive etchant and method for forming metal image using same

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/77 *
EXBK/80 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0020144A3 (en) * 1979-05-31 1982-12-01 Fujitsu Limited Method of producing a semiconductor device
EP0054164A1 (fr) * 1980-12-16 1982-06-23 International Business Machines Corporation Procédé pour aplanir du dioxyde de silicium à surface non-planaire pour dispositifs semiconducteurs
US4389281A (en) * 1980-12-16 1983-06-21 International Business Machines Corporation Method of planarizing silicon dioxide in semiconductor devices

Also Published As

Publication number Publication date
NL7705320A (nl) 1977-11-16
GB1539700A (en) 1979-01-31
CH614808A5 (fr) 1979-12-14
US4127437A (en) 1978-11-28
JPS6048902B2 (ja) 1985-10-30
JPS531198A (en) 1978-01-07
DE2721086A1 (de) 1977-12-01
IT1083827B (it) 1985-05-25

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