FR2358024A1 - Structure de thyristor integre - Google Patents

Structure de thyristor integre

Info

Publication number
FR2358024A1
FR2358024A1 FR7719963A FR7719963A FR2358024A1 FR 2358024 A1 FR2358024 A1 FR 2358024A1 FR 7719963 A FR7719963 A FR 7719963A FR 7719963 A FR7719963 A FR 7719963A FR 2358024 A1 FR2358024 A1 FR 2358024A1
Authority
FR
France
Prior art keywords
surface area
integrated structure
switching speed
providing high
high switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7719963A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2358024A1 publication Critical patent/FR2358024A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/20—Subject matter not provided for in other groups of this subclass comprising memory cells having thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Thyristors (AREA)

Abstract

L'invention concerne les circuits intégrés. Les thyristors PNPN isolés de l'invention comprennent quatre régions verticales successives formées dans une région située entièrement au-dessus d'un caisson enterré 408 dans un substrat 410. Les différents thyristors sont isolés les uns des autres par des diffusions profondes d'une impureté correspondant à celle du substrat. Les signaux de gâchette du thyristor peuvent provenir d'un transistor PNP latéral possédant deux régions communes avec le thyristor. Application aux mémoires à semi-conducteur.
FR7719963A 1976-07-06 1977-06-29 Structure de thyristor integre Withdrawn FR2358024A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70263076A 1976-07-06 1976-07-06

Publications (1)

Publication Number Publication Date
FR2358024A1 true FR2358024A1 (fr) 1978-02-03

Family

ID=24822007

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7719963A Withdrawn FR2358024A1 (fr) 1976-07-06 1977-06-29 Structure de thyristor integre

Country Status (4)

Country Link
JP (1) JPS536585A (fr)
BE (1) BE856484A (fr)
DE (1) DE2730344A1 (fr)
FR (1) FR2358024A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0003030A3 (en) * 1977-12-30 1979-08-22 International Business Machines Corporation Bipolar dynamic memory cell
FR2462028A1 (fr) * 1979-07-17 1981-02-06 Thomson Csf Structure de thyristor pour circuit integre et son procede de fabrication

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400711A (en) * 1981-03-31 1983-08-23 Rca Corporation Integrated circuit protection device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0003030A3 (en) * 1977-12-30 1979-08-22 International Business Machines Corporation Bipolar dynamic memory cell
FR2462028A1 (fr) * 1979-07-17 1981-02-06 Thomson Csf Structure de thyristor pour circuit integre et son procede de fabrication

Also Published As

Publication number Publication date
JPS536585A (en) 1978-01-21
BE856484A (fr) 1977-10-31
DE2730344A1 (de) 1978-01-12

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Legal Events

Date Code Title Description
ST Notification of lapse