FR2377706A1 - Dispositif semi-conducteur integre du type darlington et son procede de fabrication - Google Patents

Dispositif semi-conducteur integre du type darlington et son procede de fabrication

Info

Publication number
FR2377706A1
FR2377706A1 FR7700739A FR7700739A FR2377706A1 FR 2377706 A1 FR2377706 A1 FR 2377706A1 FR 7700739 A FR7700739 A FR 7700739A FR 7700739 A FR7700739 A FR 7700739A FR 2377706 A1 FR2377706 A1 FR 2377706A1
Authority
FR
France
Prior art keywords
transistor
heavily doped
surface layers
integrated semiconductor
darlington pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7700739A
Other languages
English (en)
Other versions
FR2377706B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7700739A priority Critical patent/FR2377706A1/fr
Publication of FR2377706A1 publication Critical patent/FR2377706A1/fr
Application granted granted Critical
Publication of FR2377706B1 publication Critical patent/FR2377706B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

Dispositif semi-conducteur monolithique à structure plane multicouche du type amplificateur Darlington. Dispositif caractérisé en ce qu'une région fortement dopée du type des émetteurs s'étend dans la zone de liaison de la base du transistor de puissance à un conducteur de surface et est reliée en surface à la zone de liaison de la base du transistor d'entrée à un conducteur de surface. Application aux Darlingtons de commutation dont les émetteurs comportent deux zones dont une zone épitaxiale et une zone fortement dopée.
FR7700739A 1977-01-12 1977-01-12 Dispositif semi-conducteur integre du type darlington et son procede de fabrication Granted FR2377706A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7700739A FR2377706A1 (fr) 1977-01-12 1977-01-12 Dispositif semi-conducteur integre du type darlington et son procede de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7700739A FR2377706A1 (fr) 1977-01-12 1977-01-12 Dispositif semi-conducteur integre du type darlington et son procede de fabrication

Publications (2)

Publication Number Publication Date
FR2377706A1 true FR2377706A1 (fr) 1978-08-11
FR2377706B1 FR2377706B1 (fr) 1981-05-29

Family

ID=9185392

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7700739A Granted FR2377706A1 (fr) 1977-01-12 1977-01-12 Dispositif semi-conducteur integre du type darlington et son procede de fabrication

Country Status (1)

Country Link
FR (1) FR2377706A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2449333A1 (fr) * 1979-02-14 1980-09-12 Radiotechnique Compelec Perfectionnement aux dispositifs semi-conducteurs de type darlington
EP0020233A1 (fr) * 1979-05-29 1980-12-10 Thomson-Csf Structure intégrée comportant un transistor et trois diodes antisaturation
US4482911A (en) * 1979-06-12 1984-11-13 Thomson-Csf Monolithic integrated circuit equivalent to a transistor associated with three antisaturation diodes
EP0366213A1 (fr) * 1988-10-28 1990-05-02 STMicroelectronics S.r.l. Dispositif Darlington avec un transistor d'accélération qui comprend un émetteur de poids ultra-léger, et procédé de fabrication associé
EP0509363A3 (en) * 1991-04-16 1994-07-27 Siemens Ag Free-wheel transistor device and use thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2449333A1 (fr) * 1979-02-14 1980-09-12 Radiotechnique Compelec Perfectionnement aux dispositifs semi-conducteurs de type darlington
EP0020233A1 (fr) * 1979-05-29 1980-12-10 Thomson-Csf Structure intégrée comportant un transistor et trois diodes antisaturation
FR2458146A1 (fr) * 1979-05-29 1980-12-26 Thomson Csf Structure integree comportant un transistor et trois diodes antisaturation
US4482911A (en) * 1979-06-12 1984-11-13 Thomson-Csf Monolithic integrated circuit equivalent to a transistor associated with three antisaturation diodes
EP0366213A1 (fr) * 1988-10-28 1990-05-02 STMicroelectronics S.r.l. Dispositif Darlington avec un transistor d'accélération qui comprend un émetteur de poids ultra-léger, et procédé de fabrication associé
US5083182A (en) * 1988-10-28 1992-01-21 Sgs-Thomson Microelectronics S.R.L. Darlington device with an ultra-lightweight emitter speed-up transistor
EP0509363A3 (en) * 1991-04-16 1994-07-27 Siemens Ag Free-wheel transistor device and use thereof

Also Published As

Publication number Publication date
FR2377706B1 (fr) 1981-05-29

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Legal Events

Date Code Title Description
ST Notification of lapse