JPS51139283A - Semi-conductor device - Google Patents

Semi-conductor device

Info

Publication number
JPS51139283A
JPS51139283A JP50062866A JP6286675A JPS51139283A JP S51139283 A JPS51139283 A JP S51139283A JP 50062866 A JP50062866 A JP 50062866A JP 6286675 A JP6286675 A JP 6286675A JP S51139283 A JPS51139283 A JP S51139283A
Authority
JP
Japan
Prior art keywords
semi
conductor device
increasing
amplification factor
parasitic diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50062866A
Other languages
Japanese (ja)
Inventor
Kazuo Ito
Akio Anzai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50062866A priority Critical patent/JPS51139283A/en
Publication of JPS51139283A publication Critical patent/JPS51139283A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent parasitic diode in an IIL element while also increasing the current amplification factor.
JP50062866A 1975-05-28 1975-05-28 Semi-conductor device Pending JPS51139283A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50062866A JPS51139283A (en) 1975-05-28 1975-05-28 Semi-conductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50062866A JPS51139283A (en) 1975-05-28 1975-05-28 Semi-conductor device

Publications (1)

Publication Number Publication Date
JPS51139283A true JPS51139283A (en) 1976-12-01

Family

ID=13212632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50062866A Pending JPS51139283A (en) 1975-05-28 1975-05-28 Semi-conductor device

Country Status (1)

Country Link
JP (1) JPS51139283A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5543848A (en) * 1978-09-25 1980-03-27 Hitachi Ltd Integrated circuit and manufacture thereof
JPS55111159A (en) * 1979-02-20 1980-08-27 Fuji Electric Co Ltd Semiconductor integrated circuit
JPS57113272A (en) * 1980-12-29 1982-07-14 Pioneer Electronic Corp I2l integrated circuit device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5543848A (en) * 1978-09-25 1980-03-27 Hitachi Ltd Integrated circuit and manufacture thereof
JPS55111159A (en) * 1979-02-20 1980-08-27 Fuji Electric Co Ltd Semiconductor integrated circuit
JPS57113272A (en) * 1980-12-29 1982-07-14 Pioneer Electronic Corp I2l integrated circuit device

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