FR2382102B1 - - Google Patents

Info

Publication number
FR2382102B1
FR2382102B1 FR7705608A FR7705608A FR2382102B1 FR 2382102 B1 FR2382102 B1 FR 2382102B1 FR 7705608 A FR7705608 A FR 7705608A FR 7705608 A FR7705608 A FR 7705608A FR 2382102 B1 FR2382102 B1 FR 2382102B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7705608A
Other versions
FR2382102A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2382102A1 publication Critical patent/FR2382102A1/fr
Application granted granted Critical
Publication of FR2382102B1 publication Critical patent/FR2382102B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
FR7705608A 1975-02-04 1977-02-25 Thyristor a electrode de court-circuit d'emetteur pour commande de commutation a tension nulle Granted FR2382102A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4712/75A GB1499203A (en) 1975-02-04 1975-02-04 Thyristor structure to facilitate zero point switching

Publications (2)

Publication Number Publication Date
FR2382102A1 FR2382102A1 (fr) 1978-09-22
FR2382102B1 true FR2382102B1 (fr) 1983-10-28

Family

ID=9782375

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7705608A Granted FR2382102A1 (fr) 1975-02-04 1977-02-25 Thyristor a electrode de court-circuit d'emetteur pour commande de commutation a tension nulle

Country Status (4)

Country Link
US (1) US4027322A (fr)
DE (1) DE2706011A1 (fr)
FR (1) FR2382102A1 (fr)
GB (1) GB1499203A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166224A (en) * 1977-06-17 1979-08-28 Hutson Jerald L Photosensitive zero voltage semiconductor switching device
US5291041A (en) * 1993-03-01 1994-03-01 The United States Of America As Represented By The Secretary Of The Army AlGaAs/GaAs thyristor

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3364440A (en) * 1965-03-31 1968-01-16 Texas Instruments Inc Inverter circuits
SE335389B (fr) * 1966-10-25 1971-05-24 Asea Ab
FR1541894A (fr) * 1966-10-25 1968-10-11 Asea Ab Dispositif à semi-conducteurs
US3434022A (en) * 1967-01-27 1969-03-18 Motorola Inc Semiconductor controlled rectifier device
CH460957A (de) * 1967-08-03 1968-08-15 Bbc Brown Boveri & Cie Schaltungsanordnung mit mehreren Halbleiterelementen
SE320729B (fr) * 1968-06-05 1970-02-16 Asea Ab
US3727116A (en) * 1970-05-05 1973-04-10 Rca Corp Integral thyristor-rectifier device
US3967308A (en) * 1971-10-01 1976-06-29 Hitachi, Ltd. Semiconductor controlled rectifier
US3914783A (en) * 1971-10-01 1975-10-21 Hitachi Ltd Multi-layer semiconductor device
JPS4918279A (fr) * 1972-06-08 1974-02-18
US3855611A (en) * 1973-04-11 1974-12-17 Rca Corp Thyristor devices
GB1432697A (en) * 1973-05-04 1976-04-22 Standard Telephones Cables Ltd Optically coupled semiconductive switching devices

Also Published As

Publication number Publication date
US4027322A (en) 1977-05-31
FR2382102A1 (fr) 1978-09-22
GB1499203A (en) 1978-01-25
DE2706011A1 (de) 1978-08-17

Similar Documents

Publication Publication Date Title
FR2315908B1 (fr)
IN144468B (fr)
JPS5232593U (fr)
JPS5272582U (fr)
JPS5257161U (fr)
JPS5540602Y2 (fr)
JPS5423774B2 (fr)
JPS5259319U (fr)
JPS5190743U (fr)
JPS5217497U (fr)
JPS51145710U (fr)
JPS5198683U (fr)
CH601833A5 (fr)
CH601981A5 (fr)
BG22542A1 (fr)
CH593855A5 (fr)
CH599497A5 (fr)
CH588401A5 (fr)
CH591648A5 (fr)
CH602135A5 (fr)
CH596119A5 (fr)
CH597750A5 (fr)
BG21749A1 (fr)
CH604038A5 (fr)
CH602120A5 (fr)

Legal Events

Date Code Title Description
ST Notification of lapse