FR2382102A1 - Thyristor a electrode de court-circuit d'emetteur pour commande de commutation a tension nulle - Google Patents

Thyristor a electrode de court-circuit d'emetteur pour commande de commutation a tension nulle

Info

Publication number
FR2382102A1
FR2382102A1 FR7705608A FR7705608A FR2382102A1 FR 2382102 A1 FR2382102 A1 FR 2382102A1 FR 7705608 A FR7705608 A FR 7705608A FR 7705608 A FR7705608 A FR 7705608A FR 2382102 A1 FR2382102 A1 FR 2382102A1
Authority
FR
France
Prior art keywords
thyristor
voltage switching
switching control
cathode
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7705608A
Other languages
English (en)
Other versions
FR2382102B1 (fr
Inventor
Rudolf August Herbert Heinecke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2382102A1 publication Critical patent/FR2382102A1/fr
Application granted granted Critical
Publication of FR2382102B1 publication Critical patent/FR2382102B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices

Landscapes

  • Thyristors (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)

Abstract

Thyristor de puissance dont la couche de commande de type P comporte des régions de surface 21 traversant la couche cathodique N**+. Selon l'invention, les régions 21 sont isolées de la cathode par des gorges circulaires 12 analogues à celle il qui isole le contact de gâchette et elles sont reliées à une quatrième électrode (émetteur). Le court-circuit émetteur-cathode peut ainsi être contrôlé par un commutateur électronique extérieur, par exemple un transistor. Pour un signal de gâchette d'amplitude définie, le thyristor ne peut être amorcé tant que le court-circuit est fermé ce qui permet de réaliser un circuit de commande de commutation à tension nulle extrêmement simplifié. Application particulière aux photothyristors pour relais statiques à isolement optique des circuits de commande et de puissance.
FR7705608A 1975-02-04 1977-02-25 Thyristor a electrode de court-circuit d'emetteur pour commande de commutation a tension nulle Granted FR2382102A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4712/75A GB1499203A (en) 1975-02-04 1975-02-04 Thyristor structure to facilitate zero point switching

Publications (2)

Publication Number Publication Date
FR2382102A1 true FR2382102A1 (fr) 1978-09-22
FR2382102B1 FR2382102B1 (fr) 1983-10-28

Family

ID=9782375

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7705608A Granted FR2382102A1 (fr) 1975-02-04 1977-02-25 Thyristor a electrode de court-circuit d'emetteur pour commande de commutation a tension nulle

Country Status (4)

Country Link
US (1) US4027322A (fr)
DE (1) DE2706011A1 (fr)
FR (1) FR2382102A1 (fr)
GB (1) GB1499203A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166224A (en) * 1977-06-17 1979-08-28 Hutson Jerald L Photosensitive zero voltage semiconductor switching device
US5291041A (en) * 1993-03-01 1994-03-01 The United States Of America As Represented By The Secretary Of The Army AlGaAs/GaAs thyristor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1541894A (fr) * 1966-10-25 1968-10-11 Asea Ab Dispositif à semi-conducteurs
US3855611A (en) * 1973-04-11 1974-12-17 Rca Corp Thyristor devices

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3364440A (en) * 1965-03-31 1968-01-16 Texas Instruments Inc Inverter circuits
SE335389B (fr) * 1966-10-25 1971-05-24 Asea Ab
US3434022A (en) * 1967-01-27 1969-03-18 Motorola Inc Semiconductor controlled rectifier device
CH460957A (de) * 1967-08-03 1968-08-15 Bbc Brown Boveri & Cie Schaltungsanordnung mit mehreren Halbleiterelementen
SE320729B (fr) * 1968-06-05 1970-02-16 Asea Ab
US3727116A (en) * 1970-05-05 1973-04-10 Rca Corp Integral thyristor-rectifier device
US3967308A (en) * 1971-10-01 1976-06-29 Hitachi, Ltd. Semiconductor controlled rectifier
US3914783A (en) * 1971-10-01 1975-10-21 Hitachi Ltd Multi-layer semiconductor device
JPS4918279A (fr) * 1972-06-08 1974-02-18
GB1432697A (en) * 1973-05-04 1976-04-22 Standard Telephones Cables Ltd Optically coupled semiconductive switching devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1541894A (fr) * 1966-10-25 1968-10-11 Asea Ab Dispositif à semi-conducteurs
US3855611A (en) * 1973-04-11 1974-12-17 Rca Corp Thyristor devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/77 *

Also Published As

Publication number Publication date
US4027322A (en) 1977-05-31
FR2382102B1 (fr) 1983-10-28
GB1499203A (en) 1978-01-25
DE2706011A1 (de) 1978-08-17

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Legal Events

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