FR2394833A1 - Resine de masquage positive presentant une sensibilite amelioree a l'irradiation electronique, et methode de fabrication d'une telle resine - Google Patents

Resine de masquage positive presentant une sensibilite amelioree a l'irradiation electronique, et methode de fabrication d'une telle resine

Info

Publication number
FR2394833A1
FR2394833A1 FR7718625A FR7718625A FR2394833A1 FR 2394833 A1 FR2394833 A1 FR 2394833A1 FR 7718625 A FR7718625 A FR 7718625A FR 7718625 A FR7718625 A FR 7718625A FR 2394833 A1 FR2394833 A1 FR 2394833A1
Authority
FR
France
Prior art keywords
positive resist
improved sensitivity
resist resin
electronic irradiation
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7718625A
Other languages
English (en)
Other versions
FR2394833B1 (fr
Inventor
Maryse Gazard
Jean-Claude Dubois
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7718625A priority Critical patent/FR2394833A1/fr
Publication of FR2394833A1 publication Critical patent/FR2394833A1/fr
Application granted granted Critical
Publication of FR2394833B1 publication Critical patent/FR2394833B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

L'invention se rapporte aux polymères utilisés en électrolithographie pour fabriquer des masques destinés à la gravure chimique de substrats, la résine positive se dégradant sous l'effet des électrons de 10 à 20 keV. Pour obtenir un polymère dégradable sous une dose de 1.10**-7 à 1.10**-6 coulombs par cm**2, on polymérise du méthacrylate de méthyle en procédant par voie radicalaire à faible vitesse, basse température et ren ement limité à 1/10. A cet effet on soumet le monomère aux rayons Gamma du Cobalt 60 pendant plus de cent heures. On obtient un polymère de grande masse moléculaire (3.10**6) et de faible polydispersité. Application aux masques de fabrications de dispositifs à semiconducteurs.
FR7718625A 1977-06-17 1977-06-17 Resine de masquage positive presentant une sensibilite amelioree a l'irradiation electronique, et methode de fabrication d'une telle resine Granted FR2394833A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7718625A FR2394833A1 (fr) 1977-06-17 1977-06-17 Resine de masquage positive presentant une sensibilite amelioree a l'irradiation electronique, et methode de fabrication d'une telle resine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7718625A FR2394833A1 (fr) 1977-06-17 1977-06-17 Resine de masquage positive presentant une sensibilite amelioree a l'irradiation electronique, et methode de fabrication d'une telle resine

Publications (2)

Publication Number Publication Date
FR2394833A1 true FR2394833A1 (fr) 1979-01-12
FR2394833B1 FR2394833B1 (fr) 1981-08-28

Family

ID=9192220

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7718625A Granted FR2394833A1 (fr) 1977-06-17 1977-06-17 Resine de masquage positive presentant une sensibilite amelioree a l'irradiation electronique, et methode de fabrication d'une telle resine

Country Status (1)

Country Link
FR (1) FR2394833A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0110515A1 (fr) * 1982-09-28 1984-06-13 Exxon Research And Engineering Company Méthode pour le contraste et la sensibilité d'un polymère réserve positif, avec température de congélation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2265809A1 (fr) * 1974-03-25 1975-10-24 Ibm

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2265809A1 (fr) * 1974-03-25 1975-10-24 Ibm

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *
EXBK/76 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0110515A1 (fr) * 1982-09-28 1984-06-13 Exxon Research And Engineering Company Méthode pour le contraste et la sensibilité d'un polymère réserve positif, avec température de congélation

Also Published As

Publication number Publication date
FR2394833B1 (fr) 1981-08-28

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Legal Events

Date Code Title Description
ST Notification of lapse