FR2409599A1 - Circuit logique integre - Google Patents

Circuit logique integre

Info

Publication number
FR2409599A1
FR2409599A1 FR7832509A FR7832509A FR2409599A1 FR 2409599 A1 FR2409599 A1 FR 2409599A1 FR 7832509 A FR7832509 A FR 7832509A FR 7832509 A FR7832509 A FR 7832509A FR 2409599 A1 FR2409599 A1 FR 2409599A1
Authority
FR
France
Prior art keywords
transistor
auxiliary
logic circuit
preferredly
incorporated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7832509A
Other languages
English (en)
Other versions
FR2409599B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7712649A external-priority patent/NL7712649A/xx
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2409599A1 publication Critical patent/FR2409599A1/fr
Application granted granted Critical
Publication of FR2409599B1 publication Critical patent/FR2409599B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63Combinations of vertical and lateral BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67Complementary BJTs
    • H10D84/673Vertical complementary BJTs

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Electronic Switches (AREA)

Abstract

CIRCUIT LOGIQUE INTEGRE DANS LEQUEL LES CIRCUITS-PORTES PRESENTENT UNE SOURCE DE COURANT QUI EST RELIEE A LA BASE D'UN TRANSISTOR INVERSEUR PLANAR ET PLUSIEURS DIODES SCHOTTKY QUI SONT INTEGREES DANS OU SUR LE DOMAINE DE COLLECTEUR DU TRANSISTOR. AU TRANSISTOR INVERSEUR EST INCORPORE UN TRANSISTOR AUXILIAIRE COMPRENANT UN COLLECTEUR QUI EST PREVU DANS LA ZONE DE BASE DU TRANSISTOR INVERSEUR ET QUI EST DE PREFERENCE MIS EN COURT-CIRCUIT AVEC CETTE ZONE DE BASE. UN TRANSISTOR AUXILIAIRE COMPLEMENTAIRE LATERAL ETOU UN TRANSISTOR AUXILIAIRE COMPLEMENTAIRE VERTICAL SONT EGALEMENT INCORPORES DE PREFERENCE AU CIRCUIT. LES TRANSISTORS AUXILIAIRES LIMITENT LA MESURE DANS LAQUELLE LE TRANSISTOR INVERSEUR CONDUCTEUR PEUT SE SATURER ET MAINTIENNENT LE STOCKAGE DES PORTEURS DE CHARGES LIBRES A UNE FAIBLE VALEUR. APPLICATION : DISPOSITIF SEMICONDUCTEUR.
FR7832509A 1977-11-17 1978-11-17 Circuit logique integre Granted FR2409599A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7712649A NL7712649A (nl) 1977-11-17 1977-11-17 Geientegreerde schakeling.
NL7800407A NL7800407A (nl) 1977-11-17 1978-01-13 Geientegreerde logische schakeling.

Publications (2)

Publication Number Publication Date
FR2409599A1 true FR2409599A1 (fr) 1979-06-15
FR2409599B1 FR2409599B1 (fr) 1985-01-18

Family

ID=26645363

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7832509A Granted FR2409599A1 (fr) 1977-11-17 1978-11-17 Circuit logique integre

Country Status (10)

Country Link
JP (1) JPS5478988A (fr)
BR (1) BR7807497A (fr)
CA (1) CA1129973A (fr)
CH (1) CH637788A5 (fr)
DE (1) DE2848632C2 (fr)
ES (1) ES475105A1 (fr)
FR (1) FR2409599A1 (fr)
GB (1) GB2008318B (fr)
IT (1) IT1100262B (fr)
NL (1) NL7800407A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026057935A1 (fr) 2024-09-10 2026-03-19 Stellantis Auto Sas Machine electrique comprenant des aimants permanents a flux variable et a flux constant

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3676714A (en) * 1969-04-18 1972-07-11 Philips Corp Semiconductor device
FR2297522A1 (fr) * 1975-01-10 1976-08-06 Plessey Handel Investment Ag Structure a transistors a faible duree de stockage

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3676714A (en) * 1969-04-18 1972-07-11 Philips Corp Semiconductor device
FR2297522A1 (fr) * 1975-01-10 1976-08-06 Plessey Handel Investment Ag Structure a transistors a faible duree de stockage

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/71 *
EXBK/77 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026057935A1 (fr) 2024-09-10 2026-03-19 Stellantis Auto Sas Machine electrique comprenant des aimants permanents a flux variable et a flux constant

Also Published As

Publication number Publication date
NL7800407A (nl) 1979-05-21
ES475105A1 (es) 1979-04-01
CA1129973A (fr) 1982-08-17
FR2409599B1 (fr) 1985-01-18
CH637788A5 (de) 1983-08-15
IT7829768A0 (it) 1978-11-14
GB2008318B (en) 1982-03-31
GB2008318A (en) 1979-05-31
JPS5478988A (en) 1979-06-23
IT1100262B (it) 1985-09-28
DE2848632C2 (de) 1985-12-19
BR7807497A (pt) 1979-07-17
DE2848632A1 (de) 1979-05-23
JPS5719866B2 (fr) 1982-04-24

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Legal Events

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