JPS5719866B2 - - Google Patents
Info
- Publication number
- JPS5719866B2 JPS5719866B2 JP14215478A JP14215478A JPS5719866B2 JP S5719866 B2 JPS5719866 B2 JP S5719866B2 JP 14215478 A JP14215478 A JP 14215478A JP 14215478 A JP14215478 A JP 14215478A JP S5719866 B2 JPS5719866 B2 JP S5719866B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/63—Combinations of vertical and lateral BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
Landscapes
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Bipolar Transistors (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7712649A NL7712649A (nl) | 1977-11-17 | 1977-11-17 | Geientegreerde schakeling. |
| NL7800407A NL7800407A (nl) | 1977-11-17 | 1978-01-13 | Geientegreerde logische schakeling. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5478988A JPS5478988A (en) | 1979-06-23 |
| JPS5719866B2 true JPS5719866B2 (fr) | 1982-04-24 |
Family
ID=26645363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14215478A Granted JPS5478988A (en) | 1977-11-17 | 1978-11-17 | Ic logic |
Country Status (10)
| Country | Link |
|---|---|
| JP (1) | JPS5478988A (fr) |
| BR (1) | BR7807497A (fr) |
| CA (1) | CA1129973A (fr) |
| CH (1) | CH637788A5 (fr) |
| DE (1) | DE2848632C2 (fr) |
| ES (1) | ES475105A1 (fr) |
| FR (1) | FR2409599A1 (fr) |
| GB (1) | GB2008318B (fr) |
| IT (1) | IT1100262B (fr) |
| NL (1) | NL7800407A (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3166254A1 (fr) | 2024-09-10 | 2026-03-13 | Stellantis Auto Sas | Machine electrique avec rotor comprenant des aimants permanents a flux magnetique variable |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL161923C (nl) * | 1969-04-18 | 1980-03-17 | Philips Nv | Halfgeleiderinrichting. |
| GB1490631A (en) * | 1975-01-10 | 1977-11-02 | Plessey Co Ltd | Transistor arrangement having low charge storage |
-
1978
- 1978-01-13 NL NL7800407A patent/NL7800407A/xx not_active Application Discontinuation
- 1978-11-09 DE DE2848632A patent/DE2848632C2/de not_active Expired
- 1978-11-09 CA CA316,085A patent/CA1129973A/fr not_active Expired
- 1978-11-14 GB GB7844334A patent/GB2008318B/en not_active Expired
- 1978-11-14 IT IT29768/78A patent/IT1100262B/it active
- 1978-11-14 BR BR7807497A patent/BR7807497A/pt unknown
- 1978-11-14 CH CH1170278A patent/CH637788A5/de not_active IP Right Cessation
- 1978-11-15 ES ES475105A patent/ES475105A1/es not_active Expired
- 1978-11-17 FR FR7832509A patent/FR2409599A1/fr active Granted
- 1978-11-17 JP JP14215478A patent/JPS5478988A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| IT7829768A0 (it) | 1978-11-14 |
| ES475105A1 (es) | 1979-04-01 |
| NL7800407A (nl) | 1979-05-21 |
| JPS5478988A (en) | 1979-06-23 |
| FR2409599A1 (fr) | 1979-06-15 |
| CH637788A5 (de) | 1983-08-15 |
| GB2008318A (en) | 1979-05-31 |
| CA1129973A (fr) | 1982-08-17 |
| FR2409599B1 (fr) | 1985-01-18 |
| BR7807497A (pt) | 1979-07-17 |
| GB2008318B (en) | 1982-03-31 |
| DE2848632A1 (de) | 1979-05-23 |
| IT1100262B (it) | 1985-09-28 |
| DE2848632C2 (de) | 1985-12-19 |