FR2420848A1 - Procede de realisation de diodes electroluminescentes et photodetectrices - Google Patents

Procede de realisation de diodes electroluminescentes et photodetectrices

Info

Publication number
FR2420848A1
FR2420848A1 FR7808522A FR7808522A FR2420848A1 FR 2420848 A1 FR2420848 A1 FR 2420848A1 FR 7808522 A FR7808522 A FR 7808522A FR 7808522 A FR7808522 A FR 7808522A FR 2420848 A1 FR2420848 A1 FR 2420848A1
Authority
FR
France
Prior art keywords
thickness
wafer
electroluminescent
realization
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7808522A
Other languages
English (en)
Other versions
FR2420848B1 (fr
Inventor
Jean Marine
Michel Ravetto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR7808522A priority Critical patent/FR2420848A1/fr
Priority to GB7909547A priority patent/GB2017404B/en
Priority to CA000323836A priority patent/CA1138558A/fr
Priority to US06/022,607 priority patent/US4295148A/en
Priority to DE19792911011 priority patent/DE2911011A1/de
Priority to JP3418579A priority patent/JPS54130890A/ja
Publication of FR2420848A1 publication Critical patent/FR2420848A1/fr
Application granted granted Critical
Publication of FR2420848B1 publication Critical patent/FR2420848B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/18—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/084—Ion implantation of compound devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping

Landscapes

  • Light Receiving Elements (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Procédé de réalisation d'une diode électroluminescente et/ou photodétectrice. Ce procédé se caractérise en ce qu'il comprend les étapes suivantes : a) on part d'une plaquette en matériau semiconducteur ZnTe de type P; b) on crée à la surface de ladite plaquette une couche d'épaisseur xj compensée de telle façon qu'elle soit isolante avec une résistivité élevée; c) on implante des ions avec une énergie suffisante pour créer une zone de piégeage d'épaisseur x1 en surface du semiconducteur et, au-dessous, une zone isolante d'épaisseur x2 , avec d) on réalise sur la deuxième face de la plaquette un deuxième contact métallique. Application à la réalisation de matrices de diodes électroluminescentes et détectrices.
FR7808522A 1978-03-23 1978-03-23 Procede de realisation de diodes electroluminescentes et photodetectrices Granted FR2420848A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7808522A FR2420848A1 (fr) 1978-03-23 1978-03-23 Procede de realisation de diodes electroluminescentes et photodetectrices
GB7909547A GB2017404B (en) 1978-03-23 1979-03-19 Method of fabrication of diodes
CA000323836A CA1138558A (fr) 1978-03-23 1979-03-20 Methode de fabrication de diodes electroluminescentes et photodetectrices
US06/022,607 US4295148A (en) 1978-03-23 1979-03-21 Method of fabrication of electroluminescent and photodetecting diodes
DE19792911011 DE2911011A1 (de) 1978-03-23 1979-03-21 Elektrolumineszente und lichterkennende dioden sowie verfahren zur herstellung dieser dioden
JP3418579A JPS54130890A (en) 1978-03-23 1979-03-23 Electroluminescent and photo detective diode and method of fabricating same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7808522A FR2420848A1 (fr) 1978-03-23 1978-03-23 Procede de realisation de diodes electroluminescentes et photodetectrices

Publications (2)

Publication Number Publication Date
FR2420848A1 true FR2420848A1 (fr) 1979-10-19
FR2420848B1 FR2420848B1 (fr) 1982-12-31

Family

ID=9206216

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7808522A Granted FR2420848A1 (fr) 1978-03-23 1978-03-23 Procede de realisation de diodes electroluminescentes et photodetectrices

Country Status (6)

Country Link
US (1) US4295148A (fr)
JP (1) JPS54130890A (fr)
CA (1) CA1138558A (fr)
DE (1) DE2911011A1 (fr)
FR (1) FR2420848A1 (fr)
GB (1) GB2017404B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0908953A1 (fr) * 1996-04-19 1999-04-14 Oki Electric Industry Co., Ltd. Module à élément électroluminescent et puce
US6163036A (en) * 1997-09-15 2000-12-19 Oki Data Corporation Light emitting element module with a parallelogram-shaped chip and a staggered chip array

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0760904B2 (ja) * 1990-03-19 1995-06-28 イーストマン・コダックジャパン株式会社 発光素子
US5097299A (en) * 1990-04-05 1992-03-17 University Of Delaware Multi-bandgap single dual function light emitting/detecting diode
US6791257B1 (en) * 1999-02-05 2004-09-14 Japan Energy Corporation Photoelectric conversion functional element and production method thereof
DE102004012818B3 (de) * 2004-03-16 2005-10-27 Infineon Technologies Ag Verfahren zum Herstellen eines Leistungshalbleiterbauelements
DE102004060199A1 (de) * 2004-12-14 2006-06-29 Schreiner Group Gmbh & Co. Kg Helligkeitssensor
DE102009003544B4 (de) * 2009-02-26 2012-10-18 Q-Cells Se Verfahren zur Überprüfung von Solarzellenoberflächen

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3366819A (en) * 1966-02-14 1968-01-30 Ibm Light emitting semiconductor device
US3413506A (en) * 1966-07-06 1968-11-26 Bell Telephone Labor Inc Znte:o electroluminescent device
US3732471A (en) * 1969-11-10 1973-05-08 Corning Glass Works Method of obtaining type conversion in zinc telluride and resultant p-n junction devices
FR2281647A1 (fr) * 1974-08-08 1976-03-05 Commissariat Energie Atomique Procede de fabrication de dispositifs optoelectroniques par implantation ionique

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3366819A (en) * 1966-02-14 1968-01-30 Ibm Light emitting semiconductor device
US3413506A (en) * 1966-07-06 1968-11-26 Bell Telephone Labor Inc Znte:o electroluminescent device
US3732471A (en) * 1969-11-10 1973-05-08 Corning Glass Works Method of obtaining type conversion in zinc telluride and resultant p-n junction devices
FR2281647A1 (fr) * 1974-08-08 1976-03-05 Commissariat Energie Atomique Procede de fabrication de dispositifs optoelectroniques par implantation ionique

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0908953A1 (fr) * 1996-04-19 1999-04-14 Oki Electric Industry Co., Ltd. Module à élément électroluminescent et puce
US6163036A (en) * 1997-09-15 2000-12-19 Oki Data Corporation Light emitting element module with a parallelogram-shaped chip and a staggered chip array

Also Published As

Publication number Publication date
FR2420848B1 (fr) 1982-12-31
US4295148A (en) 1981-10-13
CA1138558A (fr) 1982-12-28
GB2017404A (en) 1979-10-03
DE2911011A1 (de) 1979-10-04
JPS54130890A (en) 1979-10-11
GB2017404B (en) 1982-04-07

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Legal Events

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