FR2449335A1 - Structure de transistor pnp lateral pour haute tension v(br)ceo, protege contre une inversion des polarites d'alimentation et produit resultant - Google Patents

Structure de transistor pnp lateral pour haute tension v(br)ceo, protege contre une inversion des polarites d'alimentation et produit resultant

Info

Publication number
FR2449335A1
FR2449335A1 FR8001519A FR8001519A FR2449335A1 FR 2449335 A1 FR2449335 A1 FR 2449335A1 FR 8001519 A FR8001519 A FR 8001519A FR 8001519 A FR8001519 A FR 8001519A FR 2449335 A1 FR2449335 A1 FR 2449335A1
Authority
FR
France
Prior art keywords
pnp transistor
contour
ceo
high voltage
lateral pnp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8001519A
Other languages
English (en)
Other versions
FR2449335B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
SGS ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of FR2449335A1 publication Critical patent/FR2449335A1/fr
Application granted granted Critical
Publication of FR2449335B1 publication Critical patent/FR2449335B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

CE TRANSISTOR PNP LATERAL PEUT ETRE SOUMIS SANS DOMMAGE A UNE INVERSION DE POLARITE DANS DES CIRCUITS ELECTRONIQUES. DANS LE PLAN EXTERNE DU SEMI-CONDUCTEUR AYANT SUBI LA CROISSANCE EPITAXIALE ET LE DOPAGE N QUI FORME LA BASE DU PNP LATERAL, ON DISTINGUE LES LIGNES D'INTERSECTION AVEC: LA ZONE DIFFUSEE DE COLLECTEUR, DELIMITEE PAR LE CONTOUR 13 ET PAR LE CONTOUR 19, LA ZONE D'EMETTEUR DELIMITEE PAR LE CONTOUR 12, LA ZONE DU CONTACT DE BASE 16 DELIMITEE PAR LE CONTOUR 18 ET, EN PROJECTION ORTHOGONALE, LES LIGNES D'INTERSECTION, ENTRE EUX ET AVEC LE PLAN, DES DIFFERENTS ELEMENTS.
FR8001519A 1979-02-13 1980-01-24 Structure de transistor pnp lateral pour haute tension v(br)ceo, protege contre une inversion des polarites d'alimentation et produit resultant Granted FR2449335A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT20139/79A IT1111981B (it) 1979-02-13 1979-02-13 Struttura di transistore v(br)ceo protetto per il caso di inversione delle polarita' di alimentazione e prodotto risultante

Publications (2)

Publication Number Publication Date
FR2449335A1 true FR2449335A1 (fr) 1980-09-12
FR2449335B1 FR2449335B1 (fr) 1983-02-04

Family

ID=11164126

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8001519A Granted FR2449335A1 (fr) 1979-02-13 1980-01-24 Structure de transistor pnp lateral pour haute tension v(br)ceo, protege contre une inversion des polarites d'alimentation et produit resultant

Country Status (6)

Country Link
US (1) US4319262A (fr)
JP (1) JPS55111166A (fr)
DE (1) DE3005367A1 (fr)
FR (1) FR2449335A1 (fr)
GB (1) GB2042259B (fr)
IT (1) IT1111981B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852347B2 (ja) * 1980-02-04 1983-11-22 株式会社日立製作所 高耐圧半導体装置
FR2575333B1 (fr) * 1984-12-21 1987-01-23 Radiotechnique Compelec Dispositif de protection d'un circuit integre contre les decharges electrostatiques
GB2201543A (en) * 1987-02-25 1988-09-01 Philips Electronic Associated A photosensitive device
JPH01126144U (fr) * 1988-02-22 1989-08-29
US5040045A (en) * 1990-05-17 1991-08-13 U.S. Philips Corporation High voltage MOS transistor having shielded crossover path for a high voltage connection bus
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3197710A (en) * 1963-05-31 1965-07-27 Westinghouse Electric Corp Complementary transistor structure
US3443173A (en) * 1966-05-17 1969-05-06 Sprague Electric Co Narrow emitter lateral transistor
DE1942239A1 (de) * 1968-09-09 1970-04-16 Nat Semiconductor Corp Flaechentransistor und Verfahren zur Herstellung desselben

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1400150A (fr) * 1963-07-08 1965-05-21 Rca Corp Dispositifs semi-conducteurs perfectionnés
US3600651A (en) * 1969-12-08 1971-08-17 Fairchild Camera Instr Co Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon
US4125853A (en) * 1977-03-28 1978-11-14 Bell Telephone Laboratories, Incorporated Integrated circuit transistor
JPS5643005Y2 (fr) * 1978-12-26 1981-10-08

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3197710A (en) * 1963-05-31 1965-07-27 Westinghouse Electric Corp Complementary transistor structure
US3412460A (en) * 1963-05-31 1968-11-26 Westinghouse Electric Corp Method of making complementary transistor structure
US3443173A (en) * 1966-05-17 1969-05-06 Sprague Electric Co Narrow emitter lateral transistor
DE1942239A1 (de) * 1968-09-09 1970-04-16 Nat Semiconductor Corp Flaechentransistor und Verfahren zur Herstellung desselben

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
EXBK/64 *
EXBK/75 *
EXBK/76 *

Also Published As

Publication number Publication date
GB2042259A (en) 1980-09-17
DE3005367C2 (fr) 1988-01-07
GB2042259B (en) 1983-09-01
IT1111981B (it) 1986-01-13
JPS6239547B2 (fr) 1987-08-24
US4319262A (en) 1982-03-09
IT7920139A0 (it) 1979-02-13
DE3005367A1 (de) 1980-08-21
FR2449335B1 (fr) 1983-02-04
JPS55111166A (en) 1980-08-27

Similar Documents

Publication Publication Date Title
JPS6453577A (en) Nonvolatile semiconductor device and manufacture thereof
GB1159937A (en) Improvements in or relating to Semiconductor Devices.
FR2322456A1 (fr) Procede de superfinition de surfaces de semi-conducteurs, en particulier de surfaces d'arseniure de gallium d'orientation (111)
JPS5694732A (en) Semiconductor substrate
GB1355890A (en) Contacts for solar cells
JPS55111171A (en) Field-effect semiconductor device
ES521503A0 (es) Perfeccionamientos en una unidad de base para conjuntos de compuertas logicas de circuito integrado.
GB1529216A (en) Lateral bipolar transistor
GB1145075A (en) Semiconductor device
JPS57208174A (en) Semiconductor device
GB1305471A (fr)
JPS5331978A (en) Production of complementary field effect semiconductor device
GB958245A (en) Semiconductor devices
GB1493828A (en) Semiconductors
GB1263817A (en) Improvements in or relating to integrated circuits
JPS5322383A (en) Iil simiconductor device
JPS55117270A (en) Junction breakdown type field programmable cell array semiconductor device
JPS5615063A (en) Semiconductor device
JPS57177570A (en) Junction type field effect transistor
JPS55141760A (en) Field effect transistor
JPS52111386A (en) Production of semi-conductor
JPS53118386A (en) Manufacture of mos.ic ic
GB1165774A (en) Improvements in and relating to Voltage-Dependent Capacitors
JPS5541747A (en) Field effect transistor
JPS5559779A (en) Schottky field effect transistor