FR2470810A1 - Procede de fabrication de structures semi-conductrices par croissance epitaxiale en phase liquide et structures obtenues - Google Patents

Procede de fabrication de structures semi-conductrices par croissance epitaxiale en phase liquide et structures obtenues

Info

Publication number
FR2470810A1
FR2470810A1 FR7930103A FR7930103A FR2470810A1 FR 2470810 A1 FR2470810 A1 FR 2470810A1 FR 7930103 A FR7930103 A FR 7930103A FR 7930103 A FR7930103 A FR 7930103A FR 2470810 A1 FR2470810 A1 FR 2470810A1
Authority
FR
France
Prior art keywords
liquid phase
gallium
epitaxial growth
structures
manufacturing semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7930103A
Other languages
English (en)
Other versions
FR2470810B1 (fr
Inventor
Philippe Jarry
Pierre Guittard
Alphonse Ducarre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoires dElectronique Philips SAS
Original Assignee
Laboratoires dElectronique et de Physique Appliquee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoires dElectronique et de Physique Appliquee filed Critical Laboratoires dElectronique et de Physique Appliquee
Priority to FR7930103A priority Critical patent/FR2470810A1/fr
Priority to CA000365934A priority patent/CA1155974A/fr
Priority to DE19803045484 priority patent/DE3045484A1/de
Priority to GB8038730A priority patent/GB2064977B/en
Priority to JP55171946A priority patent/JPS6052578B2/ja
Priority to US06/213,982 priority patent/US4366009A/en
Publication of FR2470810A1 publication Critical patent/FR2470810A1/fr
Application granted granted Critical
Publication of FR2470810B1 publication Critical patent/FR2470810B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/971—Stoichiometric control of host substrate composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

L'INVENTION CONCERNE UN PROCEDE DE FABRICATION DE STRUCTURES SEMI-CONDUCTRICES, PAR CROISSANCE EPITAXIALE EN PHASE LIQUIDE SUR UN SUBSTRAT, DE COUCHES D'ARSENIURE DE GALLIUM OU D'ARSENIURE DE GALLIUM ET D'ALUMINIUM, DOPEES AU MOYEN D'ELEMENTS TELS QUE LE GERMANIUM, PUIS ENLEVEMENT PAR RACLAGE DE LA DERNIERE SOLUTION DE CROISSANCE, ET ENFIN REFROIDISSEMENT DANS LE FOUR A EPITAXIE DE LA STRUCTURE OBTENUE JUSQU'A LA TEMPERATURE AMBIANTE. L'INVENTION CONCERNE EGALEMENT LES DISPOSITIFS SEMI-CONDUCTEURS OBTENUS PAR LA MISE EN OEUVRE DE CE PROCEDE. L'INVENTION EST REMARQUABLE EN CE QU'AU COURS DU REFROIDISSEMENT, ON MET LA FACE SUPERIEURE DE LADITE STRUCTURE EN CONTACT AVEC UN BAIN DE GALLIUM LIQUIDE, DE MANIERE A DISSOUDRE LES ELEMENTS DOPANTS PRESENTS DANS LES QUELQUES GOUTTES RESTANTES DE LA DERNIERE SOLUTION DE CROISSANCE, NON ENLEVEES PAR LEDIT RACLAGE. APPLICATION: LASERS A HETEROSTRUCTURE, DIODES ELECTROLUMINESCENTES, PHOTOCATHODES SEMI-TRANSPARENTES.
FR7930103A 1979-12-07 1979-12-07 Procede de fabrication de structures semi-conductrices par croissance epitaxiale en phase liquide et structures obtenues Granted FR2470810A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7930103A FR2470810A1 (fr) 1979-12-07 1979-12-07 Procede de fabrication de structures semi-conductrices par croissance epitaxiale en phase liquide et structures obtenues
CA000365934A CA1155974A (fr) 1979-12-07 1980-12-02 Methode de croissance epistaxiale a partir d'un bain de gallium
DE19803045484 DE3045484A1 (de) 1979-12-07 1980-12-03 Verfahren zur herstellung von halbleiterstrukturen durch epitaktisches anwachsen aus der fluessigkeitsphase und durch dieses verfahren erhaltene strukturen
GB8038730A GB2064977B (en) 1979-12-07 1980-12-03 Method of manufacturing semiconductor structures by liquid phase epitaxy
JP55171946A JPS6052578B2 (ja) 1979-12-07 1980-12-05 半導体装置の製造方法
US06/213,982 US4366009A (en) 1979-12-07 1980-12-08 Method of manufacturing semiconductor structures by epitaxial growth from the liquid phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7930103A FR2470810A1 (fr) 1979-12-07 1979-12-07 Procede de fabrication de structures semi-conductrices par croissance epitaxiale en phase liquide et structures obtenues

Publications (2)

Publication Number Publication Date
FR2470810A1 true FR2470810A1 (fr) 1981-06-12
FR2470810B1 FR2470810B1 (fr) 1985-02-01

Family

ID=9232523

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7930103A Granted FR2470810A1 (fr) 1979-12-07 1979-12-07 Procede de fabrication de structures semi-conductrices par croissance epitaxiale en phase liquide et structures obtenues

Country Status (6)

Country Link
US (1) US4366009A (fr)
JP (1) JPS6052578B2 (fr)
CA (1) CA1155974A (fr)
DE (1) DE3045484A1 (fr)
FR (1) FR2470810A1 (fr)
GB (1) GB2064977B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991015361A1 (fr) * 1990-03-30 1991-10-17 Institutul De Fizica Atomica Procede d'obtention de surfaces planes en arseniure de gallium

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2195069A1 (fr) * 1972-07-28 1974-03-01 Matsushita Electronics Corp

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE754519A (fr) * 1969-08-06 1971-02-08 Motorola Inc Procede et appareil pour la croissance de couches epitaxiales en phase liquide sur des semi-conducteurs
JPS53271B1 (fr) * 1971-03-05 1978-01-06
NL7306004A (fr) * 1973-05-01 1974-11-05
JPS5329508B2 (fr) * 1974-03-27 1978-08-21
US4028148A (en) * 1974-12-20 1977-06-07 Nippon Telegraph And Telephone Public Corporation Method of epitaxially growing a laminate semiconductor layer in liquid phase
JPS5248949B2 (fr) * 1974-12-20 1977-12-13
US3950195A (en) * 1975-02-21 1976-04-13 Bell Telephone Laboratories, Incorporated Lpe technique for reducing edge growth
US4008106A (en) * 1975-11-13 1977-02-15 The United States Of America As Represented By The Secretary Of The Army Method of fabricating III-V photocathodes
US4178195A (en) * 1976-11-22 1979-12-11 International Business Machines Corporation Semiconductor structure

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2195069A1 (fr) * 1972-07-28 1974-03-01 Matsushita Electronics Corp

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/72 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991015361A1 (fr) * 1990-03-30 1991-10-17 Institutul De Fizica Atomica Procede d'obtention de surfaces planes en arseniure de gallium

Also Published As

Publication number Publication date
JPS5694623A (en) 1981-07-31
DE3045484C2 (fr) 1988-02-18
GB2064977B (en) 1983-10-19
DE3045484A1 (de) 1981-09-17
CA1155974A (fr) 1983-10-25
JPS6052578B2 (ja) 1985-11-20
FR2470810B1 (fr) 1985-02-01
US4366009A (en) 1982-12-28
GB2064977A (en) 1981-06-24

Similar Documents

Publication Publication Date Title
US4468850A (en) GaInAsP/InP Double-heterostructure lasers
US3551219A (en) Epitaxial growth technique
US3723201A (en) Diffusion process for heteroepitaxial germanium device fabrication utilizing polycrystalline silicon mask
GB1332775A (en) Method of forming region of a desired conductivity type in the surface of a semiconductor body
US4417262A (en) Green light emitting device
US3909926A (en) Method of fabricating a semiconductor diode having high voltage characteristics
JPS5493378A (en) Manufacture for semiconductor device
US3406049A (en) Epitaxial semiconductor layer as a diffusion mask
JPS54152878A (en) Structure of semiconductor laser element and its manufacture
US4298410A (en) Method for growing a liquid phase epitaxial layer on a semiconductor substrate
US3677228A (en) Crystal growth apparatus
NL7803711A (nl) Galliumarsenidehalfgeleiderinrichting met daarop epi- taxiaal aangebrachte buffer- en actieve lagen, alsmede werkwijze voor het epitaxiaal afzetten van galliumarse- nidelagen op een monokristallijn galliumarsenidesub- straat.
US3745071A (en) Selective liquid growth process
US3901744A (en) Method of making semiconductor devices
GB1363524A (en) Diffusion of impurities into a substrate
JPS57187936A (en) Manufacture of 3-5 family compound semiconductor element
CA1155974A (fr) Methode de croissance epistaxiale a partir d'un bain de gallium
Moustakas Growth of III–V Nitrides by Molecular Beam Epitaxy
JPS626338B2 (fr)
JPS5574193A (en) Manufacturing semiconductor laser
JPH0557236B2 (fr)
JPS55165689A (en) Preparation of light emission semiconductor device
SU463394A1 (ru) Способ получени полупроводниковых структур
JPS5534482A (en) Manufacturing method for semiconductor laser
JPS55165688A (en) Preparation of light emission semiconductor device

Legal Events

Date Code Title Description
CL Concession to grant licences
ST Notification of lapse