FR2581481B1 - Transistor hyperfrequences et son procede de fabrication - Google Patents

Transistor hyperfrequences et son procede de fabrication

Info

Publication number
FR2581481B1
FR2581481B1 FR8506754A FR8506754A FR2581481B1 FR 2581481 B1 FR2581481 B1 FR 2581481B1 FR 8506754 A FR8506754 A FR 8506754A FR 8506754 A FR8506754 A FR 8506754A FR 2581481 B1 FR2581481 B1 FR 2581481B1
Authority
FR
France
Prior art keywords
manufacturing
microwave transistor
microwave
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8506754A
Other languages
English (en)
Other versions
FR2581481A1 (fr
Inventor
Bernard Fumee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR8506754A priority Critical patent/FR2581481B1/fr
Publication of FR2581481A1 publication Critical patent/FR2581481A1/fr
Application granted granted Critical
Publication of FR2581481B1 publication Critical patent/FR2581481B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H10D10/056—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
    • H10D10/058—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures
FR8506754A 1985-05-03 1985-05-03 Transistor hyperfrequences et son procede de fabrication Expired FR2581481B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8506754A FR2581481B1 (fr) 1985-05-03 1985-05-03 Transistor hyperfrequences et son procede de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8506754A FR2581481B1 (fr) 1985-05-03 1985-05-03 Transistor hyperfrequences et son procede de fabrication

Publications (2)

Publication Number Publication Date
FR2581481A1 FR2581481A1 (fr) 1986-11-07
FR2581481B1 true FR2581481B1 (fr) 1988-04-29

Family

ID=9318933

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8506754A Expired FR2581481B1 (fr) 1985-05-03 1985-05-03 Transistor hyperfrequences et son procede de fabrication

Country Status (1)

Country Link
FR (1) FR2581481B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5492844A (en) * 1993-01-29 1996-02-20 Sgs-Thomson Microelectronics, Inc. Method of manufacturing increased conductivity base contact/feeders with self-aligned structures
FR2832548B1 (fr) * 2001-11-16 2004-01-02 United Monolithic Semiconduct Transistor hyperfrequence de puissance

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3601666A (en) * 1969-08-21 1971-08-24 Texas Instruments Inc Titanium tungsten-gold contacts for semiconductor devices
FR2206585B1 (fr) * 1972-11-13 1977-07-22 Radiotechnique Compelec
US4488349A (en) * 1982-04-09 1984-12-18 Nissan Motor Company, Limited Method of repairing shorts in parallel connected vertical semiconductor devices by selective anodization
FR2545654B1 (fr) * 1983-05-03 1985-09-13 Fairchild Camera Instr Co Composant semi-conducteur de puissance, et procede pour la fabrication
DE3329241A1 (de) * 1983-08-12 1985-02-21 Siemens AG, 1000 Berlin und 8000 München Leistungstransistor

Also Published As

Publication number Publication date
FR2581481A1 (fr) 1986-11-07

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Legal Events

Date Code Title Description
ST Notification of lapse