FR2832548B1 - Transistor hyperfrequence de puissance - Google Patents

Transistor hyperfrequence de puissance

Info

Publication number
FR2832548B1
FR2832548B1 FR0114855A FR0114855A FR2832548B1 FR 2832548 B1 FR2832548 B1 FR 2832548B1 FR 0114855 A FR0114855 A FR 0114855A FR 0114855 A FR0114855 A FR 0114855A FR 2832548 B1 FR2832548 B1 FR 2832548B1
Authority
FR
France
Prior art keywords
power
transistor
hyperfrequency transistor
power hyperfrequency
hyperfrequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0114855A
Other languages
English (en)
Other versions
FR2832548A1 (fr
Inventor
Philippe Auxemery
Laurent Favede
Thibaut Huet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Monolithic Semiconductors GmbH
United Monolithic Semiconductors SAS
Original Assignee
United Monolithic Semiconductors GmbH
United Monolithic Semiconductors SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Monolithic Semiconductors GmbH, United Monolithic Semiconductors SAS filed Critical United Monolithic Semiconductors GmbH
Priority to FR0114855A priority Critical patent/FR2832548B1/fr
Publication of FR2832548A1 publication Critical patent/FR2832548A1/fr
Application granted granted Critical
Publication of FR2832548B1 publication Critical patent/FR2832548B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231Emitter or collector electrodes for bipolar transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • H10D10/80Heterojunction BJTs
    • H10D10/821Vertical heterojunction BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126Top-view geometrical layouts of the regions or the junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281Base electrodes for bipolar transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
FR0114855A 2001-11-16 2001-11-16 Transistor hyperfrequence de puissance Expired - Lifetime FR2832548B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR0114855A FR2832548B1 (fr) 2001-11-16 2001-11-16 Transistor hyperfrequence de puissance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0114855A FR2832548B1 (fr) 2001-11-16 2001-11-16 Transistor hyperfrequence de puissance

Publications (2)

Publication Number Publication Date
FR2832548A1 FR2832548A1 (fr) 2003-05-23
FR2832548B1 true FR2832548B1 (fr) 2004-01-02

Family

ID=8869480

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0114855A Expired - Lifetime FR2832548B1 (fr) 2001-11-16 2001-11-16 Transistor hyperfrequence de puissance

Country Status (1)

Country Link
FR (1) FR2832548B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE212012000287U1 (de) * 2012-09-28 2015-05-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauelement mit mindestens einer Kontaktstruktur zum Zuführen und/oder Abführen von Ladungsträgern

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2581481B1 (fr) * 1985-05-03 1988-04-29 Radiotechnique Compelec Transistor hyperfrequences et son procede de fabrication
US5210596A (en) * 1989-06-30 1993-05-11 Texas Instruments Incorporated Thermally optimized interdigitated transistor
US5321279A (en) * 1992-11-09 1994-06-14 Texas Instruments Incorporated Base ballasting
AU3885095A (en) * 1994-11-03 1996-05-31 Telefonaktiebolaget Lm Ericsson (Publ) Ballast monitoring for radio frequency power transistors

Also Published As

Publication number Publication date
FR2832548A1 (fr) 2003-05-23

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