FR2832548B1 - Transistor hyperfrequence de puissance - Google Patents
Transistor hyperfrequence de puissanceInfo
- Publication number
- FR2832548B1 FR2832548B1 FR0114855A FR0114855A FR2832548B1 FR 2832548 B1 FR2832548 B1 FR 2832548B1 FR 0114855 A FR0114855 A FR 0114855A FR 0114855 A FR0114855 A FR 0114855A FR 2832548 B1 FR2832548 B1 FR 2832548B1
- Authority
- FR
- France
- Prior art keywords
- power
- transistor
- hyperfrequency transistor
- power hyperfrequency
- hyperfrequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/231—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/281—Base electrodes for bipolar transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
- H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0114855A FR2832548B1 (fr) | 2001-11-16 | 2001-11-16 | Transistor hyperfrequence de puissance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0114855A FR2832548B1 (fr) | 2001-11-16 | 2001-11-16 | Transistor hyperfrequence de puissance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2832548A1 FR2832548A1 (fr) | 2003-05-23 |
| FR2832548B1 true FR2832548B1 (fr) | 2004-01-02 |
Family
ID=8869480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR0114855A Expired - Lifetime FR2832548B1 (fr) | 2001-11-16 | 2001-11-16 | Transistor hyperfrequence de puissance |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2832548B1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE212012000287U1 (de) * | 2012-09-28 | 2015-05-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiterbauelement mit mindestens einer Kontaktstruktur zum Zuführen und/oder Abführen von Ladungsträgern |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2581481B1 (fr) * | 1985-05-03 | 1988-04-29 | Radiotechnique Compelec | Transistor hyperfrequences et son procede de fabrication |
| US5210596A (en) * | 1989-06-30 | 1993-05-11 | Texas Instruments Incorporated | Thermally optimized interdigitated transistor |
| US5321279A (en) * | 1992-11-09 | 1994-06-14 | Texas Instruments Incorporated | Base ballasting |
| AU3885095A (en) * | 1994-11-03 | 1996-05-31 | Telefonaktiebolaget Lm Ericsson (Publ) | Ballast monitoring for radio frequency power transistors |
-
2001
- 2001-11-16 FR FR0114855A patent/FR2832548B1/fr not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR2832548A1 (fr) | 2003-05-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PLFP | Fee payment |
Year of fee payment: 15 |
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| PLFP | Fee payment |
Year of fee payment: 16 |
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| PLFP | Fee payment |
Year of fee payment: 17 |
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| PLFP | Fee payment |
Year of fee payment: 18 |
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| PLFP | Fee payment |
Year of fee payment: 19 |
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| PLFP | Fee payment |
Year of fee payment: 20 |