FR2606552B1 - Composant a semi-conducteur resistant aux rayonnements - Google Patents

Composant a semi-conducteur resistant aux rayonnements

Info

Publication number
FR2606552B1
FR2606552B1 FR878708008A FR8708008A FR2606552B1 FR 2606552 B1 FR2606552 B1 FR 2606552B1 FR 878708008 A FR878708008 A FR 878708008A FR 8708008 A FR8708008 A FR 8708008A FR 2606552 B1 FR2606552 B1 FR 2606552B1
Authority
FR
France
Prior art keywords
semiconductor component
radiation resistant
resistant semiconductor
radiation
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR878708008A
Other languages
English (en)
Other versions
FR2606552A1 (fr
Inventor
Kamal Tabatabaie-Alavi
Bruce W Black
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of FR2606552A1 publication Critical patent/FR2606552A1/fr
Application granted granted Critical
Publication of FR2606552B1 publication Critical patent/FR2606552B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
FR878708008A 1986-06-11 1987-06-09 Composant a semi-conducteur resistant aux rayonnements Expired - Fee Related FR2606552B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87298486A 1986-06-11 1986-06-11

Publications (2)

Publication Number Publication Date
FR2606552A1 FR2606552A1 (fr) 1988-05-13
FR2606552B1 true FR2606552B1 (fr) 1991-08-23

Family

ID=25360747

Family Applications (1)

Application Number Title Priority Date Filing Date
FR878708008A Expired - Fee Related FR2606552B1 (fr) 1986-06-11 1987-06-09 Composant a semi-conducteur resistant aux rayonnements

Country Status (4)

Country Link
JP (1) JPS62298177A (fr)
DE (1) DE3719535A1 (fr)
FR (1) FR2606552B1 (fr)
GB (1) GB2191633B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01253957A (ja) * 1988-04-04 1989-10-11 Agency Of Ind Science & Technol ガリウム砒素半導体メモリ集積回路
FR2667442B1 (fr) * 1989-10-23 1995-02-10 Commissariat Energie Atomique Semi-conducteurs pour composants microelectroniques a haute resistance contre les radiations ionisantes.
JP4472340B2 (ja) 2001-11-05 2010-06-02 株式会社ザイキューブ 低誘電率材料膜を用いた半導体装置およびその製造方法
CN111291480B (zh) * 2020-01-21 2024-10-18 中国科学院微电子研究所 一种mos器件剂量率模型的建模方法和装置
CN115472699B (zh) * 2022-09-29 2025-12-23 西安电子科技大学 一种系pn结的复合结构mos抗辐照器件及制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4247862B1 (en) * 1977-08-26 1995-12-26 Intel Corp Ionzation resistant mos structure
US4163237A (en) * 1978-04-24 1979-07-31 Bell Telephone Laboratories, Incorporated High mobility multilayered heterojunction devices employing modulated doping
IT1149814B (it) * 1979-11-26 1986-12-10 Ibm Struttura semiconduttrice
JPS58107679A (ja) * 1981-12-21 1983-06-27 Mitsubishi Electric Corp 電界効果トランジスタ
US4578127A (en) * 1982-08-13 1986-03-25 At&T Bell Laboratories Method of making an improved group III-V semiconductor device utilizing a getter-smoothing layer
JPS5963769A (ja) * 1982-10-05 1984-04-11 Agency Of Ind Science & Technol 高速半導体素子
JPS61289673A (ja) * 1985-06-18 1986-12-19 Sumitomo Electric Ind Ltd 化合物半導体装置

Also Published As

Publication number Publication date
DE3719535A1 (de) 1988-01-28
GB8713523D0 (en) 1987-07-15
GB2191633B (en) 1990-02-14
JPS62298177A (ja) 1987-12-25
FR2606552A1 (fr) 1988-05-13
GB2191633A (en) 1987-12-16

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Legal Events

Date Code Title Description
ST Notification of lapse