FR2606553B1 - Dispositif de transfert de charge - Google Patents

Dispositif de transfert de charge

Info

Publication number
FR2606553B1
FR2606553B1 FR8715584A FR8715584A FR2606553B1 FR 2606553 B1 FR2606553 B1 FR 2606553B1 FR 8715584 A FR8715584 A FR 8715584A FR 8715584 A FR8715584 A FR 8715584A FR 2606553 B1 FR2606553 B1 FR 2606553B1
Authority
FR
France
Prior art keywords
transfer device
load transfer
load
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR8715584A
Other languages
English (en)
Other versions
FR2606553A1 (fr
Inventor
Narabu Tadakuni
Maki Yasuhito
Kondo Tetsuya
Hirota Isao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2606553A1 publication Critical patent/FR2606553A1/fr
Application granted granted Critical
Publication of FR2606553B1 publication Critical patent/FR2606553B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454Output structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462Buried-channel CCD
    • H10D44/464Two-phase CCD
FR8715584A 1986-11-10 1987-11-10 Dispositif de transfert de charge Expired - Lifetime FR2606553B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61267264A JP2508668B2 (ja) 1986-11-10 1986-11-10 電荷転送装置

Publications (2)

Publication Number Publication Date
FR2606553A1 FR2606553A1 (fr) 1988-05-13
FR2606553B1 true FR2606553B1 (fr) 1994-05-13

Family

ID=17442427

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8715584A Expired - Lifetime FR2606553B1 (fr) 1986-11-10 1987-11-10 Dispositif de transfert de charge

Country Status (6)

Country Link
US (1) US4939560A (fr)
JP (1) JP2508668B2 (fr)
KR (1) KR0147364B1 (fr)
DE (1) DE3738025C2 (fr)
FR (1) FR2606553B1 (fr)
GB (1) GB2197986B (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306932A (en) * 1989-07-21 1994-04-26 Nec Corporation Charge transfer device provided with improved output structure
JPH07123163B2 (ja) * 1989-07-21 1995-12-25 日本電気株式会社 電荷転送装置
JPH0423334A (ja) * 1990-05-14 1992-01-27 Nec Corp 電荷転送装置
US5250824A (en) * 1990-08-29 1993-10-05 California Institute Of Technology Ultra low-noise charge coupled device
KR940004273B1 (ko) * 1991-02-12 1994-05-19 금성일렉트론 주식회사 이상 수직 ccd 구조
KR940000953Y1 (ko) * 1991-04-13 1994-02-25 금성일렉트론 주식회사 Ccd의 리셋트 게이트 구조
KR940001404B1 (ko) * 1991-04-15 1994-02-21 금성일렉트론 주식회사 더미 hccd구조
JP3143979B2 (ja) * 1991-08-22 2001-03-07 ソニー株式会社 Ccdシフトレジスタ
JP2963572B2 (ja) * 1992-01-27 1999-10-18 沖電気工業株式会社 電荷結合素子
JPH05251480A (ja) * 1992-03-04 1993-09-28 Sony Corp 電荷電圧変換装置
KR950002084A (ko) * 1993-06-22 1995-01-04 오가 노리오 전하전송장치
KR970010687B1 (ko) * 1993-11-05 1997-06-30 엘지반도체 주식회사 쌍방형 전하결합소자
JP4981255B2 (ja) * 2005-01-24 2012-07-18 オンセミコンダクター・トレーディング・リミテッド 電荷結合装置及び固体撮像装置
US8383443B2 (en) 2010-05-14 2013-02-26 International Business Machines Corporation Non-uniform gate dielectric charge for pixel sensor cells and methods of manufacturing
KR102291762B1 (ko) 2017-11-07 2021-09-03 주식회사 엘지에너지솔루션 릴레이 진단 회로
KR102251647B1 (ko) 2019-11-07 2021-05-13 울산대학교 산학협력단 풍력 터빈 발전기용 비돌출형 풍향 풍속 측정 장치 및 그 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS606101B2 (ja) * 1976-10-14 1985-02-15 ソニー株式会社 電荷転送装置の製法
DE2818026A1 (de) * 1977-05-02 1978-11-16 Hughes Aircraft Co Ladungsgekoppeltes bauelement
US4171521A (en) * 1977-06-02 1979-10-16 Hughes Aircraft Company Charge-coupled analog-to-digital converter
US4538287A (en) * 1979-06-04 1985-08-27 Texas Instruments Incorporated Floating gate amplifier using conductive coupling for charge coupled devices
NL8301715A (nl) * 1983-05-13 1984-12-03 Philips Nv Ladingstransportinrichting.
JPH0714045B2 (ja) * 1985-03-15 1995-02-15 ソニー株式会社 電荷転送装置
CA1314601C (fr) * 1986-02-03 1993-03-16 Dennis J. Wilwerding Compensation de courant d'obscurite

Also Published As

Publication number Publication date
KR0147364B1 (ko) 1998-08-01
DE3738025A1 (de) 1988-05-11
DE3738025C2 (de) 2003-06-26
GB8726108D0 (en) 1987-12-09
KR880006785A (ko) 1988-07-25
GB2197986B (en) 1990-08-29
GB2197986A (en) 1988-06-02
US4939560A (en) 1990-07-03
JP2508668B2 (ja) 1996-06-19
JPS63120465A (ja) 1988-05-24
FR2606553A1 (fr) 1988-05-13

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