FR2664094B1 - Tube a vide microminiature sur un substrat semiconducteur et procede de fabrication. - Google Patents

Tube a vide microminiature sur un substrat semiconducteur et procede de fabrication.

Info

Publication number
FR2664094B1
FR2664094B1 FR9107879A FR9107879A FR2664094B1 FR 2664094 B1 FR2664094 B1 FR 2664094B1 FR 9107879 A FR9107879 A FR 9107879A FR 9107879 A FR9107879 A FR 9107879A FR 2664094 B1 FR2664094 B1 FR 2664094B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor substrate
vacuum tube
microminiature vacuum
microminiature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9107879A
Other languages
English (en)
Other versions
FR2664094A1 (fr
Inventor
Yoshida Masahiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2664094A1 publication Critical patent/FR2664094A1/fr
Application granted granted Critical
Publication of FR2664094B1 publication Critical patent/FR2664094B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J21/00—Vacuum tubes
    • H01J21/02—Tubes with a single discharge path
    • H01J21/06—Tubes with a single discharge path having electrostatic control means only
    • H01J21/10—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode
    • H01J21/105—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode with microengineered cathode and control electrodes, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Bipolar Transistors (AREA)
FR9107879A 1990-06-27 1991-06-26 Tube a vide microminiature sur un substrat semiconducteur et procede de fabrication. Expired - Fee Related FR2664094B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17046290A JP2918637B2 (ja) 1990-06-27 1990-06-27 微小真空管及びその製造方法

Publications (2)

Publication Number Publication Date
FR2664094A1 FR2664094A1 (fr) 1992-01-03
FR2664094B1 true FR2664094B1 (fr) 1993-02-12

Family

ID=15905390

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9107879A Expired - Fee Related FR2664094B1 (fr) 1990-06-27 1991-06-26 Tube a vide microminiature sur un substrat semiconducteur et procede de fabrication.

Country Status (4)

Country Link
US (2) US5270258A (fr)
JP (1) JP2918637B2 (fr)
FR (1) FR2664094B1 (fr)
GB (1) GB2247773B (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4209301C1 (en) * 1992-03-21 1993-08-19 Gesellschaft Fuer Schwerionenforschung Mbh, 6100 Darmstadt, De Manufacture of controlled field emitter for flat display screen, TV etc. - using successive etching and deposition stages to form cone shaped emitter peak set in insulating matrix together with electrodes
US5499938A (en) * 1992-07-14 1996-03-19 Kabushiki Kaisha Toshiba Field emission cathode structure, method for production thereof, and flat panel display device using same
US5583058A (en) * 1992-09-17 1996-12-10 Mitsubishi Denki Kabushiki Kaisha Infrared detection element array and method for fabricating the same
JP3226238B2 (ja) * 1993-03-15 2001-11-05 株式会社東芝 電界放出型冷陰極およびその製造方法
US5795208A (en) * 1994-10-11 1998-08-18 Yamaha Corporation Manufacture of electron emitter by replica technique
US5599749A (en) * 1994-10-21 1997-02-04 Yamaha Corporation Manufacture of micro electron emitter
US5747926A (en) * 1995-03-10 1998-05-05 Kabushiki Kaisha Toshiba Ferroelectric cold cathode
US5688708A (en) * 1996-06-24 1997-11-18 Motorola Method of making an ultra-high vacuum field emission display
EP0974156B1 (fr) * 1996-06-25 2004-10-13 Vanderbilt University Structures, reseaux et dispositifs a emission de champ sous vide a micro-pointe et techniques de fabrication
JP3195547B2 (ja) * 1996-11-11 2001-08-06 松下電器産業株式会社 真空封止電界放出型電子源装置及びその製造方法
US5989931A (en) * 1997-09-24 1999-11-23 Simon Fraser University Low-cost methods for manufacturing field ionization and emission structures with self-aligned gate electrodes
US6187515B1 (en) * 1998-05-07 2001-02-13 Trw Inc. Optical integrated circuit microbench system
JP3778256B2 (ja) * 2000-02-28 2006-05-24 セイコーエプソン株式会社 半導体装置及びその製造方法、回路基板並びに電子機器
US7460748B2 (en) * 2004-01-08 2008-12-02 Tang Yin S Lensed tip optical fiber and method of making the same
WO2016025456A1 (fr) 2014-08-11 2016-02-18 Franklin Fueling Systems, Inc. Système de surveillance pour une station de remplissage de carburant

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4149175A (en) * 1975-06-20 1979-04-10 Matsushita Electric Industrial Co., Ltd. Solidstate light-emitting device
JPS56160740A (en) * 1980-05-12 1981-12-10 Sony Corp Manufacture of thin-film field type cold cathode
US4307507A (en) * 1980-09-10 1981-12-29 The United States Of America As Represented By The Secretary Of The Navy Method of manufacturing a field-emission cathode structure
FR2607623B1 (fr) * 1986-11-27 1995-02-17 Commissariat Energie Atomique Source d'electrons polarises de spin, utilisant une cathode emissive a micropointes, application en physique des interactions electrons-matiere ou electrons-particules, physique des plasmas, microscopie electronique
EP0713241B1 (fr) * 1987-02-06 2001-09-19 Canon Kabushiki Kaisha Dispositif d'affichage comprenant un élément émetteur d'électrons
US4721885A (en) * 1987-02-11 1988-01-26 Sri International Very high speed integrated microelectronic tubes
GB8720792D0 (en) * 1987-09-04 1987-10-14 Gen Electric Co Plc Vacuum devices
EP0365630B1 (fr) * 1988-03-25 1994-03-02 Thomson-Csf Procede de fabrication de sources d'electrons du type a emission de champ, et son application a la realisation de reseaux d'emetteurs
US5012153A (en) * 1989-12-22 1991-04-30 Atkinson Gary M Split collector vacuum field effect transistor
JPH03222232A (ja) * 1990-01-25 1991-10-01 Mitsubishi Electric Corp 電子放出装置の製造方法
US5126287A (en) * 1990-06-07 1992-06-30 Mcnc Self-aligned electron emitter fabrication method and devices formed thereby

Also Published As

Publication number Publication date
FR2664094A1 (fr) 1992-01-03
JPH0461729A (ja) 1992-02-27
GB2247773A (en) 1992-03-11
US5270258A (en) 1993-12-14
GB2247773B (en) 1994-09-21
US5367181A (en) 1994-11-22
GB9113723D0 (en) 1991-08-14
JP2918637B2 (ja) 1999-07-12

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Legal Events

Date Code Title Description
D6 Patent endorsed licences of rights
ST Notification of lapse

Effective date: 20060228