FR2683219A1 - Substrat en verre muni d'une couche mince conductrice. - Google Patents

Substrat en verre muni d'une couche mince conductrice. Download PDF

Info

Publication number: FR2683219A1
Authority: FR; France
Prior art keywords: precursor; indium; conductive layer; titanium; compound
Prior art date: 1991-10-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

FR9113346A

Other languages

English (en)

French (fr)

Other versions

FR2683219B1 (2

Inventor

Grimal Jean-Michel

Bruneel Dominiquecampet Guy

Wen Shie Jie

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Saint Gobain Glass France SAS

Original Assignee

Saint Gobain Vitrage International SA

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-10-30

Filing date

1991-10-30

Publication date

1993-05-07

1991-10-30 Application filed by Saint Gobain Vitrage International SA filed Critical Saint Gobain Vitrage International SA

1991-10-30 Priority to FR9113346A priority Critical patent/FR2683219A1/fr

1993-05-07 Publication of FR2683219A1 publication Critical patent/FR2683219A1/fr

1995-01-27 Application granted granted Critical

1995-01-27 Publication of FR2683219B1 publication Critical patent/FR2683219B1/fr

Status Granted legal-status Critical Current

Links

239000011521 glass Substances 0.000 title claims abstract description 21
239000000758 substrate Substances 0.000 title claims abstract description 14
229910052738 indium Inorganic materials 0.000 claims abstract description 31
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 31
239000010936 titanium Substances 0.000 claims abstract description 31
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 30
229910052718 tin Inorganic materials 0.000 claims abstract description 30
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 24
229910052719 titanium Inorganic materials 0.000 claims abstract description 24
229910052732 germanium Inorganic materials 0.000 claims abstract description 19
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 19
229910052726 zirconium Inorganic materials 0.000 claims abstract description 15
QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 14
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
239000001301 oxygen Substances 0.000 claims abstract description 8
229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 5
229910052710 silicon Inorganic materials 0.000 claims abstract description 5
239000010703 silicon Substances 0.000 claims abstract description 5
239000002243 precursor Substances 0.000 claims description 39
238000000034 method Methods 0.000 claims description 25
238000000197 pyrolysis Methods 0.000 claims description 18
150000001875 compounds Chemical class 0.000 claims description 16
239000000843 powder Substances 0.000 claims description 13
238000000151 deposition Methods 0.000 claims description 8
230000008021 deposition Effects 0.000 claims description 8
JGFBRKRYDCGYKD-UHFFFAOYSA-N dibutyl(oxo)tin Chemical compound CCCC[Sn](=O)CCCC JGFBRKRYDCGYKD-UHFFFAOYSA-N 0.000 claims description 5
229910052751 metal Inorganic materials 0.000 claims description 5
239000002184 metal Substances 0.000 claims description 5
239000007789 gas Substances 0.000 claims description 4
239000000203 mixture Substances 0.000 claims description 4
238000004544 sputter deposition Methods 0.000 claims description 4
238000001771 vacuum deposition Methods 0.000 claims description 4
ONQMBYVVEVFYRP-UHFFFAOYSA-N chloro(triphenyl)germane Chemical compound C=1C=CC=CC=1[Ge](C=1C=CC=CC=1)(Cl)C1=CC=CC=C1 ONQMBYVVEVFYRP-UHFFFAOYSA-N 0.000 claims description 3
SBFKENUEAOCRNR-UHFFFAOYSA-K indium(3+);triformate Chemical compound [In+3].[O-]C=O.[O-]C=O.[O-]C=O SBFKENUEAOCRNR-UHFFFAOYSA-K 0.000 claims description 3
KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 claims description 2
239000002253 acid Substances 0.000 claims description 2
239000000919 ceramic Substances 0.000 claims description 2
239000007788 liquid Substances 0.000 claims description 2
229910001092 metal group alloy Inorganic materials 0.000 claims description 2
-1 methyl titanate Chemical compound 0.000 claims description 2
150000002902 organometallic compounds Chemical class 0.000 claims description 2
150000003839 salts Chemical class 0.000 claims description 2
UTLYKVGGKZYRRQ-UHFFFAOYSA-L dibutyltin(2+);difluoride Chemical compound CCCC[Sn](F)(F)CCCC UTLYKVGGKZYRRQ-UHFFFAOYSA-L 0.000 claims 2
YOBOXHGSEJBUPB-MTOQALJVSA-N (z)-4-hydroxypent-3-en-2-one;zirconium Chemical compound [Zr].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O YOBOXHGSEJBUPB-MTOQALJVSA-N 0.000 claims 1
229910001507 metal halide Inorganic materials 0.000 claims 1
150000005309 metal halides Chemical class 0.000 claims 1
239000007787 solid Substances 0.000 claims 1
239000002904 solvent Substances 0.000 claims 1
CUDGTZJYMWAJFV-UHFFFAOYSA-N tetraiodogermane Chemical compound I[Ge](I)(I)I CUDGTZJYMWAJFV-UHFFFAOYSA-N 0.000 claims 1
229910003437 indium oxide Inorganic materials 0.000 description 11
PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 11
239000002019 doping agent Substances 0.000 description 9
230000037230 mobility Effects 0.000 description 9
XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
229910044991 metal oxide Inorganic materials 0.000 description 6
150000004706 metal oxides Chemical class 0.000 description 6
230000001965 increasing effect Effects 0.000 description 4
230000005540 biological transmission Effects 0.000 description 3
238000005457 optimization Methods 0.000 description 3
XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
239000011787 zinc oxide Substances 0.000 description 3
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
238000000137 annealing Methods 0.000 description 2
125000004429 atom Chemical group 0.000 description 2
239000002800 charge carrier Substances 0.000 description 2
238000005229 chemical vapour deposition Methods 0.000 description 2
230000000295 complement effect Effects 0.000 description 2
238000010438 heat treatment Methods 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
230000005855 radiation Effects 0.000 description 2
238000006467 substitution reaction Methods 0.000 description 2
YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
238000004458 analytical method Methods 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
229910052799 carbon Inorganic materials 0.000 description 1
239000012159 carrier gas Substances 0.000 description 1
229910010293 ceramic material Inorganic materials 0.000 description 1
230000000052 comparative effect Effects 0.000 description 1
238000004320 controlled atmosphere Methods 0.000 description 1
239000013078 crystal Substances 0.000 description 1
IAGYEMVJHPEPGE-UHFFFAOYSA-N diiodogermanium Chemical class I[Ge]I IAGYEMVJHPEPGE-UHFFFAOYSA-N 0.000 description 1
238000009826 distribution Methods 0.000 description 1
238000001035 drying Methods 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
239000005329 float glass Substances 0.000 description 1
229910052731 fluorine Inorganic materials 0.000 description 1
239000011737 fluorine Substances 0.000 description 1
239000003574 free electron Substances 0.000 description 1
150000004820 halides Chemical class 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
SKWCWFYBFZIXHE-UHFFFAOYSA-K indium acetylacetonate Chemical compound CC(=O)C=C(C)O[In](OC(C)=CC(C)=O)OC(C)=CC(C)=O SKWCWFYBFZIXHE-UHFFFAOYSA-K 0.000 description 1
230000001939 inductive effect Effects 0.000 description 1
238000009413 insulation Methods 0.000 description 1
239000006194 liquid suspension Substances 0.000 description 1
239000000463 material Substances 0.000 description 1
239000011159 matrix material Substances 0.000 description 1
150000002736 metal compounds Chemical class 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
230000005693 optoelectronics Effects 0.000 description 1
125000002524 organometallic group Chemical group 0.000 description 1
125000004430 oxygen atom Chemical group O* 0.000 description 1
238000005375 photometry Methods 0.000 description 1
230000001737 promoting effect Effects 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
238000005245 sintering Methods 0.000 description 1
238000002207 thermal evaporation Methods 0.000 description 1
229910001887 tin oxide Inorganic materials 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/25—Oxides by deposition from the liquid phase
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/215—In2O3
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/24—Doped oxides

Landscapes

Chemical & Material Sciences (AREA)
Life Sciences & Earth Sciences (AREA)
Engineering & Computer Science (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Geochemistry & Mineralogy (AREA)
Materials Engineering (AREA)
Organic Chemistry (AREA)
Surface Treatment Of Glass (AREA)

FR9113346A 1991-10-30 1991-10-30 Substrat en verre muni d'une couche mince conductrice. Granted FR2683219A1 (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
FR9113346A FR2683219A1 (fr)	1991-10-30	1991-10-30	Substrat en verre muni d'une couche mince conductrice.

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR9113346A FR2683219A1 (fr)	1991-10-30	1991-10-30	Substrat en verre muni d'une couche mince conductrice.

Publications (2)

Publication Number	Publication Date
FR2683219A1 true FR2683219A1 (fr)	1993-05-07
FR2683219B1 FR2683219B1 (2)	1995-01-27

Family

ID=9418424

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR9113346A Granted FR2683219A1 (fr)	1991-10-30	1991-10-30	Substrat en verre muni d'une couche mince conductrice.

Country Status (1)

Country	Link
FR (1)	FR2683219A1 (2)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2001009052A1 (fr) *	1999-08-03	2001-02-08	Commissariat A L'energie Atomique	Conducteur transparent et procede de fabrication
EP2327673A4 (en) *	2008-09-25	2012-05-23	Jx Nippon Mining & Metals Corp	OXID SUTURE PRESSING FOR PRODUCING A TRANSPARENT CONDUCTIVE FILM
US20130026487A1 (en) *	2010-03-23	2013-01-31	Nichia Corporation	Nitride semiconductor light emitting element
US9028726B2 (en)	2008-09-25	2015-05-12	Jx Nippon Mining & Metals Corporation	Oxide sintered compact for producing transparent conductive film

Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
BE553209A (2) *
GB1066125A (en) *	1964-06-29	1967-04-19	Ibm	Improvements in or relating to resistors
DE1909869A1 (de) *	1968-02-28	1969-09-18	Ppg Industries Inc	Verfahren zur Herstellung leitender Metalloxidueberzuege
US3749658A (en) *	1970-01-02	1973-07-31	Rca Corp	Method of fabricating transparent conductors
EP0131827A1 (de) *	1983-07-08	1985-01-23	Schott Glaswerke	Tauchverfahren zur Herstellung transparenter, elektrisch leitfähiger, dotierter Indiumoxidschichten
EP0192009A2 (fr) *	1985-01-22	1986-08-27	Saint-Gobain Vitrage International	Procédé de prèparation d'un poudre à base de formiate d'indium pour la formation d'une couche mince sur un substrat, notamment en verre.

1991
- 1991-10-30 FR FR9113346A patent/FR2683219A1/fr active Granted

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
BE553209A (2) *
GB1066125A (en) *	1964-06-29	1967-04-19	Ibm	Improvements in or relating to resistors
DE1909869A1 (de) *	1968-02-28	1969-09-18	Ppg Industries Inc	Verfahren zur Herstellung leitender Metalloxidueberzuege
US3749658A (en) *	1970-01-02	1973-07-31	Rca Corp	Method of fabricating transparent conductors
EP0131827A1 (de) *	1983-07-08	1985-01-23	Schott Glaswerke	Tauchverfahren zur Herstellung transparenter, elektrisch leitfähiger, dotierter Indiumoxidschichten
EP0192009A2 (fr) *	1985-01-22	1986-08-27	Saint-Gobain Vitrage International	Procédé de prèparation d'un poudre à base de formiate d'indium pour la formation d'une couche mince sur un substrat, notamment en verre.

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
CHEMICAL ABSTRACTS, vol. 115, no. 6, 12 Août 1991, Columbus, Ohio, US; abstract no. 62522Y, S.KULKARNI ET AL.: 'Indium-Tin Oxide Films Radio Frequency Sputtered from Specially Formulated High Density Indium-Tin Oxide Targets.' page 908 ; *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2001009052A1 (fr) *	1999-08-03	2001-02-08	Commissariat A L'energie Atomique	Conducteur transparent et procede de fabrication
FR2797344A1 (fr) *	1999-08-03	2001-02-09	Commissariat Energie Atomique	Conducteur transparent et procede de fabrication
EP2327673A4 (en) *	2008-09-25	2012-05-23	Jx Nippon Mining & Metals Corp	OXID SUTURE PRESSING FOR PRODUCING A TRANSPARENT CONDUCTIVE FILM
US9028726B2 (en)	2008-09-25	2015-05-12	Jx Nippon Mining & Metals Corporation	Oxide sintered compact for producing transparent conductive film
US20130026487A1 (en) *	2010-03-23	2013-01-31	Nichia Corporation	Nitride semiconductor light emitting element
EP2551925A4 (en) *	2010-03-23	2016-03-16	Nichia Corp	LIGHT-EMITTING NITRID SEMICONDUCTOR ELEMENT

Also Published As

Publication number	Publication date
FR2683219B1 (2)	1995-01-27

Legal Events

Date	Code	Title	Description
2004-07-30	ST	Notification of lapse

Publication	Publication Date	Title
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