FR2765400B1 - Procede pour fabriquer une structure en materiau semi-conducteur et structure en materiau semi-conducteur absorbant les infrarouges, a bande interdite variable - Google Patents

Procede pour fabriquer une structure en materiau semi-conducteur et structure en materiau semi-conducteur absorbant les infrarouges, a bande interdite variable

Info

Publication number
FR2765400B1
FR2765400B1 FR9803477A FR9803477A FR2765400B1 FR 2765400 B1 FR2765400 B1 FR 2765400B1 FR 9803477 A FR9803477 A FR 9803477A FR 9803477 A FR9803477 A FR 9803477A FR 2765400 B1 FR2765400 B1 FR 2765400B1
Authority
FR
France
Prior art keywords
semiconductor material
variable
manufacturing
infrared absorbent
prohibited band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9803477A
Other languages
English (en)
Other versions
FR2765400A1 (fr
Inventor
Pradip Mitra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xylon LLC
Original Assignee
Lockheed Corp
Lockheed Martin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lockheed Corp, Lockheed Martin Corp filed Critical Lockheed Corp
Publication of FR2765400A1 publication Critical patent/FR2765400A1/fr
Application granted granted Critical
Publication of FR2765400B1 publication Critical patent/FR2765400B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
FR9803477A 1997-06-26 1998-03-20 Procede pour fabriquer une structure en materiau semi-conducteur et structure en materiau semi-conducteur absorbant les infrarouges, a bande interdite variable Expired - Lifetime FR2765400B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/882,881 US5998235A (en) 1997-06-26 1997-06-26 Method of fabrication for mercury-based quaternary alloys of infrared sensitive materials

Publications (2)

Publication Number Publication Date
FR2765400A1 FR2765400A1 (fr) 1998-12-31
FR2765400B1 true FR2765400B1 (fr) 1999-09-10

Family

ID=25381532

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9803477A Expired - Lifetime FR2765400B1 (fr) 1997-06-26 1998-03-20 Procede pour fabriquer une structure en materiau semi-conducteur et structure en materiau semi-conducteur absorbant les infrarouges, a bande interdite variable

Country Status (6)

Country Link
US (2) US5998235A (fr)
JP (1) JPH1126781A (fr)
FR (1) FR2765400B1 (fr)
GB (1) GB2326762B (fr)
IL (1) IL125108A (fr)
NO (1) NO982962L (fr)

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JP4211153B2 (ja) * 1999-09-17 2009-01-21 ソニー株式会社 記録装置および方法
US6429103B1 (en) * 2000-04-13 2002-08-06 Motorola, Inc. MOCVD-grown emode HIGFET buffer
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US7041983B2 (en) * 2001-10-12 2006-05-09 Lockheed Martin Corporation Planar geometry buried junction infrared detector and focal plane array
EP2337062A3 (fr) * 2003-01-27 2016-05-04 Taiwan Semiconductor Manufacturing Company, Limited Méthode de fabrication de structures semiconductrices présentant une bonne homogénéité
EP1695388A2 (fr) * 2003-12-01 2006-08-30 The Regents Of The University Of California Compositions de semi-conducteurs multibande pour dispositifs photovoltaiques
US7518207B1 (en) * 2004-03-19 2009-04-14 The United States Of America As Represented By The Secretary Of The Navy Molecular beam epitaxy growth of ternary and quaternary metal chalcogenide films
CN100508220C (zh) * 2004-04-13 2009-07-01 中国科学院福建物质结构研究所 系列类碲镉汞红外材料及其制备方法和用途
CN1332429C (zh) * 2004-07-22 2007-08-15 中芯国际集成电路制造(上海)有限公司 除去半导体器件的焊盘区中的晶格缺陷的方法
CN1298022C (zh) * 2004-07-27 2007-01-31 中国科学院上海技术物理研究所 用于碲镉汞外延生长的数字合金复合衬底及制备方法
US7865944B1 (en) * 2004-09-10 2011-01-04 Juniper Networks, Inc. Intercepting GPRS data
US8664524B2 (en) * 2008-07-17 2014-03-04 Uriel Solar, Inc. High power efficiency, large substrate, polycrystalline CdTe thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation
RU2373609C1 (ru) * 2008-09-04 2009-11-20 Институт физики полупроводников Сибирского отделения Российской академии наук Способ изготовления фоточувствительной структуры
RU2373606C1 (ru) * 2008-09-29 2009-11-20 Институт физики полупроводников Сибирского отделения Российской академии наук Фоточувствительная структура
RU2396635C1 (ru) * 2009-08-11 2010-08-10 Государственное образовательное учреждение высшего профессионального образования "Томский государственный университет" (ТГУ) Фоточувствительная к инфракрасному излучению структура и способ ее изготовления
FR2977372B1 (fr) * 2011-06-30 2015-12-18 Soc Fr Detecteurs Infrarouges Sofradir Procede pour la realisation d'un detecteur de rayonnement electro-magnetique et detecteur obtenu par ce procede
RU2529457C1 (ru) * 2013-07-17 2014-09-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский Томский государственный университет" (ТГУ) Фоточувствительная к инфракрасному излучению структура и способ ее изготовления
EP3903352B1 (fr) 2018-12-27 2022-03-30 First Solar, Inc. Dispositifs photovoltaïques et leurs procédés de fabrication

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Also Published As

Publication number Publication date
IL125108A0 (en) 1999-01-26
GB2326762A (en) 1998-12-30
US6208005B1 (en) 2001-03-27
GB2326762B (en) 2003-01-22
JPH1126781A (ja) 1999-01-29
NO982962L (no) 1998-12-28
NO982962D0 (no) 1998-06-25
IL125108A (en) 2001-04-30
US5998235A (en) 1999-12-07
FR2765400A1 (fr) 1998-12-31
GB9813545D0 (en) 1998-08-19

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Owner name: XYLON LLC, US

Effective date: 20110907

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