FR2776832B1 - Procede de fabrication de transistors jfet - Google Patents

Procede de fabrication de transistors jfet

Info

Publication number
FR2776832B1
FR2776832B1 FR9804208A FR9804208A FR2776832B1 FR 2776832 B1 FR2776832 B1 FR 2776832B1 FR 9804208 A FR9804208 A FR 9804208A FR 9804208 A FR9804208 A FR 9804208A FR 2776832 B1 FR2776832 B1 FR 2776832B1
Authority
FR
France
Prior art keywords
jfet transistors
manufacturing jfet
manufacturing
transistors
jfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9804208A
Other languages
English (en)
Other versions
FR2776832A1 (fr
Inventor
Jean Jimenez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
STMicroelectronics lnc USA
Original Assignee
SGS Thomson Microelectronics SA
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA, SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics SA
Priority to FR9804208A priority Critical patent/FR2776832B1/fr
Priority to US09/281,454 priority patent/US6153453A/en
Publication of FR2776832A1 publication Critical patent/FR2776832A1/fr
Application granted granted Critical
Publication of FR2776832B1 publication Critical patent/FR2776832B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
FR9804208A 1998-03-31 1998-03-31 Procede de fabrication de transistors jfet Expired - Fee Related FR2776832B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9804208A FR2776832B1 (fr) 1998-03-31 1998-03-31 Procede de fabrication de transistors jfet
US09/281,454 US6153453A (en) 1998-03-31 1999-03-30 JFET transistor manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9804208A FR2776832B1 (fr) 1998-03-31 1998-03-31 Procede de fabrication de transistors jfet

Publications (2)

Publication Number Publication Date
FR2776832A1 FR2776832A1 (fr) 1999-10-01
FR2776832B1 true FR2776832B1 (fr) 2000-06-16

Family

ID=9524866

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9804208A Expired - Fee Related FR2776832B1 (fr) 1998-03-31 1998-03-31 Procede de fabrication de transistors jfet

Country Status (2)

Country Link
US (1) US6153453A (fr)
FR (1) FR2776832B1 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000223701A (ja) * 1999-01-28 2000-08-11 Mitsubishi Electric Corp 半導体装置およびその製造方法
US7642566B2 (en) * 2006-06-12 2010-01-05 Dsm Solutions, Inc. Scalable process and structure of JFET for small and decreasing line widths
US6818518B1 (en) * 2003-06-24 2004-11-16 Texas Instruments Incorporated Method for producing low/high voltage threshold transistors in semiconductor processing
DE102004018153B9 (de) * 2004-04-08 2012-08-23 Austriamicrosystems Ag Hochvolt-Sperrschicht-Feldeffekttransistor mit retrograder Gatewanne und Verfahren zu dessen Herstellung
WO2006126423A1 (fr) * 2005-05-27 2006-11-30 Sharp Kabushiki Kaisha Substrat de transistor a film fin, dispositif d’affichage a cristaux liquides utilisant ce substrat et procede de fabrication de ce substrat
US7468500B2 (en) * 2005-09-13 2008-12-23 Texas Instruments Incorporated High performance charge detection amplifier for CCD image sensors
US7569873B2 (en) * 2005-10-28 2009-08-04 Dsm Solutions, Inc. Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys
US7791321B2 (en) * 2007-02-23 2010-09-07 Virginia Tech Intellectual Properties, Inc. Coupled-inductor multi-phase buck converters
WO2008137724A1 (fr) * 2007-05-03 2008-11-13 Dsm Solutions, Inc. Transistor jfet de type p de canal contraint et procédé de fabrication associé
US7453107B1 (en) * 2007-05-04 2008-11-18 Dsm Solutions, Inc. Method for applying a stress layer to a semiconductor device and device formed therefrom
US7939863B2 (en) * 2008-08-07 2011-05-10 Texas Instruments Incorporated Area efficient 3D integration of low noise JFET and MOS in linear bipolar CMOS process
US8390039B2 (en) * 2009-11-02 2013-03-05 Analog Devices, Inc. Junction field effect transistor
US8193046B2 (en) * 2009-11-02 2012-06-05 Analog Devices, Inc. Junction field effect transistor
US8462477B2 (en) * 2010-09-13 2013-06-11 Analog Devices, Inc. Junction field effect transistor for voltage protection
US9299857B2 (en) * 2014-06-19 2016-03-29 Macronix International Co., Ltd. Semiconductor device
US9543304B2 (en) 2015-04-02 2017-01-10 Stmicroelectronics, Inc. Vertical junction FinFET device and method for manufacture
CN111933694B (zh) * 2020-06-23 2024-04-30 重庆中科渝芯电子有限公司 一种多晶自掺杂平滑顶栅jfet器件及其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2753704C2 (de) * 1977-12-02 1986-11-06 Bernd Prof. Dr. rer.nat 5841 Holzen Höfflinger Verfahren zum gleichzeitigen Herstellen von mittels Feldoxid isolierten CMOS-Schaltungsanordnungen und Bipolartransistoren
JPH05304258A (ja) * 1992-04-28 1993-11-16 Toshiba Corp 半導体装置およびその製造方法
US5296409A (en) * 1992-05-08 1994-03-22 National Semiconductor Corporation Method of making n-channel and p-channel junction field-effect transistors and CMOS transistors using a CMOS or bipolar/CMOS process
EP0686305A1 (fr) * 1993-02-25 1995-12-13 National Semiconductor Corporation Procede de fabrication d'un dispositif cmos comportant des elements jfet
EP0676802B1 (fr) * 1994-03-31 1998-12-23 STMicroelectronics S.r.l. Procédé de manufacture d'un dispositif semi-conducteur avec une jonction enterrée

Also Published As

Publication number Publication date
US6153453A (en) 2000-11-28
FR2776832A1 (fr) 1999-10-01

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Legal Events

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CD Change of name or company name
ST Notification of lapse

Effective date: 20071130