FR2807569B1 - Perfectionnement apportes aux diodes schottky - Google Patents
Perfectionnement apportes aux diodes schottkyInfo
- Publication number
- FR2807569B1 FR2807569B1 FR0004583A FR0004583A FR2807569B1 FR 2807569 B1 FR2807569 B1 FR 2807569B1 FR 0004583 A FR0004583 A FR 0004583A FR 0004583 A FR0004583 A FR 0004583A FR 2807569 B1 FR2807569 B1 FR 2807569B1
- Authority
- FR
- France
- Prior art keywords
- schottky diodes
- schottky
- diodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
- H10D62/107—Buried supplementary regions, e.g. buried guard rings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/01—Manufacture or treatment
- H10D62/051—Forming charge compensation regions, e.g. superjunctions
- H10D62/054—Forming charge compensation regions, e.g. superjunctions by high energy implantations in bulk semiconductor bodies, e.g. forming pillars
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/109—Reduced surface field [RESURF] PN junction structures
- H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0004583A FR2807569B1 (fr) | 2000-04-10 | 2000-04-10 | Perfectionnement apportes aux diodes schottky |
| KR1020027013518A KR20030011820A (ko) | 2000-04-10 | 2001-04-10 | 쇼트키-다이오드 타입의 반도체 디바이스 |
| JP2001574907A JP2003530700A (ja) | 2000-04-10 | 2001-04-10 | ショットキーダイオードタイプの半導体装置及びその使用方法 |
| US10/239,629 US20040046224A1 (en) | 2000-04-10 | 2001-04-10 | Schottky-diode semiconductor device |
| AU2001250477A AU2001250477A1 (en) | 2000-04-10 | 2001-04-10 | Schottky-diode semiconductor device |
| PCT/FR2001/001101 WO2001078152A2 (fr) | 2000-04-10 | 2001-04-10 | Dispositif semi-conducteur du type diode schottky |
| EP01923789A EP1273046A2 (fr) | 2000-04-10 | 2001-04-10 | Dispositif semi-conducteur du type diode schottky |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0004583A FR2807569B1 (fr) | 2000-04-10 | 2000-04-10 | Perfectionnement apportes aux diodes schottky |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2807569A1 FR2807569A1 (fr) | 2001-10-12 |
| FR2807569B1 true FR2807569B1 (fr) | 2004-08-27 |
Family
ID=8849086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR0004583A Expired - Fee Related FR2807569B1 (fr) | 2000-04-10 | 2000-04-10 | Perfectionnement apportes aux diodes schottky |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20040046224A1 (fr) |
| EP (1) | EP1273046A2 (fr) |
| JP (1) | JP2003530700A (fr) |
| KR (1) | KR20030011820A (fr) |
| AU (1) | AU2001250477A1 (fr) |
| FR (1) | FR2807569B1 (fr) |
| WO (1) | WO2001078152A2 (fr) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4198469B2 (ja) * | 2001-04-11 | 2008-12-17 | シリコン・セミコンダクター・コーポレイション | パワーデバイスとその製造方法 |
| US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
| US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
| US7238976B1 (en) * | 2004-06-15 | 2007-07-03 | Qspeed Semiconductor Inc. | Schottky barrier rectifier and method of manufacturing the same |
| US8004049B2 (en) | 2004-08-31 | 2011-08-23 | Freescale Semiconductor, Inc. | Power semiconductor device |
| US7737522B2 (en) * | 2005-02-11 | 2010-06-15 | Alpha & Omega Semiconductor, Ltd. | Trench junction barrier controlled Schottky device with top and bottom doped regions for enhancing forward current in a vertical direction |
| US7671439B2 (en) * | 2005-02-11 | 2010-03-02 | Alpha & Omega Semiconductor, Ltd. | Junction barrier Schottky (JBS) with floating islands |
| DE102005046706B4 (de) | 2005-09-29 | 2007-07-05 | Siced Electronics Development Gmbh & Co. Kg | JBS-SiC-Halbleiterbauelement |
| JP5351519B2 (ja) * | 2005-12-27 | 2013-11-27 | パワー・インテグレーションズ・インコーポレーテッド | 高速回復整流器構造体の装置および方法 |
| US7633135B2 (en) * | 2007-07-22 | 2009-12-15 | Alpha & Omega Semiconductor, Ltd. | Bottom anode Schottky diode structure and method |
| US7560355B2 (en) * | 2006-10-24 | 2009-07-14 | Vishay General Semiconductor Llc | Semiconductor wafer suitable for forming a semiconductor junction diode device and method of forming same |
| DE102007009227B4 (de) | 2007-02-26 | 2009-01-02 | Infineon Technologies Ag | Halbleiterbauelement mit gleichrichtenden Übergängen sowie Herstellungsverfahren zur Herstellung desselben |
| US7750426B2 (en) | 2007-05-30 | 2010-07-06 | Intersil Americas, Inc. | Junction barrier Schottky diode with dual silicides |
| US8368166B2 (en) * | 2007-05-30 | 2013-02-05 | Intersil Americas Inc. | Junction barrier Schottky diode |
| TW200847448A (en) * | 2007-05-30 | 2008-12-01 | Intersil Inc | Junction barrier schottky diode |
| JP2007311822A (ja) * | 2007-07-23 | 2007-11-29 | Toshiba Corp | ショットキーバリヤダイオード |
| JP2009076866A (ja) * | 2007-08-31 | 2009-04-09 | Sumitomo Electric Ind Ltd | ショットキーバリアダイオード |
| US9102962B2 (en) * | 2007-10-16 | 2015-08-11 | Shiu Nan Chen | Production method for solid cultured active mushroom mycelium and fruit-body metabolites (AMFM) products thereof |
| US8212327B2 (en) * | 2008-03-06 | 2012-07-03 | Sionyx, Inc. | High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme |
| US7851881B1 (en) * | 2008-03-21 | 2010-12-14 | Microsemi Corporation | Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky diode or junction barrier Schottky (JBS) diode |
| US8106487B2 (en) * | 2008-12-23 | 2012-01-31 | Pratt & Whitney Rocketdyne, Inc. | Semiconductor device having an inorganic coating layer applied over a junction termination extension |
| US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
| WO2011160130A2 (fr) | 2010-06-18 | 2011-12-22 | Sionyx, Inc | Dispositifs photosensibles à grande vitesse et procédés associés |
| US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
| WO2013010127A2 (fr) | 2011-07-13 | 2013-01-17 | Sionyx, Inc. | Dispositifs de prise d'images biométriques et procédés associés |
| US8362585B1 (en) | 2011-07-15 | 2013-01-29 | Alpha & Omega Semiconductor, Inc. | Junction barrier Schottky diode with enforced upper contact structure and method for robust packaging |
| US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
| KR20150130303A (ko) | 2013-02-15 | 2015-11-23 | 사이오닉스, 아이엔씨. | 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서 |
| US9939251B2 (en) | 2013-03-15 | 2018-04-10 | Sionyx, Llc | Three dimensional imaging utilizing stacked imager devices and associated methods |
| JP2014236171A (ja) * | 2013-06-05 | 2014-12-15 | ローム株式会社 | 半導体装置およびその製造方法 |
| US9209345B2 (en) | 2013-06-29 | 2015-12-08 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
| US9070790B2 (en) * | 2013-08-29 | 2015-06-30 | Infineon Technologies Ag | Vertical semiconductor device and method of manufacturing thereof |
| US9704949B1 (en) * | 2016-06-30 | 2017-07-11 | General Electric Company | Active area designs for charge-balanced diodes |
| CN115621298B (zh) * | 2022-09-30 | 2026-02-10 | 西安电子科技大学芜湖研究院 | 浮动结掺杂浓度呈阶梯渐变的碳化硅功率器件 |
| CN116093164B (zh) * | 2023-04-07 | 2023-07-11 | 深圳市晶扬电子有限公司 | 一种带有浮岛型保护环的高压肖特基二极管 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4837227B1 (fr) * | 1968-12-20 | 1973-11-09 | ||
| GB1558506A (en) * | 1976-08-09 | 1980-01-03 | Mullard Ltd | Semiconductor devices having a rectifying metalto-semicondductor junction |
| JPH06275816A (ja) * | 1993-03-18 | 1994-09-30 | Shindengen Electric Mfg Co Ltd | ショットキバリヤダイオ−ド |
| DE69505646T2 (de) * | 1994-12-20 | 1999-05-20 | Koninklijke Philips Electronics N.V., Eindhoven | Schaltungsanordnung und sperrschicht-feldeffekttransistor zur anwendung in einer derartigen schaltungsanordnung |
| US6037632A (en) * | 1995-11-06 | 2000-03-14 | Kabushiki Kaisha Toshiba | Semiconductor device |
| JPH10117003A (ja) * | 1996-10-14 | 1998-05-06 | Hitachi Ltd | 定電圧ダイオード及びその製造方法 |
| JP2002503401A (ja) * | 1998-04-08 | 2002-01-29 | シーメンス アクチエンゲゼルシヤフト | プレーナ構造用の高耐圧コーナー部シール体 |
| DE19943143B4 (de) * | 1999-09-09 | 2008-04-24 | Infineon Technologies Ag | Halbleiterbauelement für hohe Sperrspannungen bei gleichzeitig niedrigem Einschaltwiderstand und Verfahren zu dessen Herstellung |
| DE10061528C1 (de) * | 2000-12-11 | 2002-07-25 | Infineon Technologies Ag | Mittels Feldeffekt steuerbares Halbleiterbauelement |
-
2000
- 2000-04-10 FR FR0004583A patent/FR2807569B1/fr not_active Expired - Fee Related
-
2001
- 2001-04-10 KR KR1020027013518A patent/KR20030011820A/ko not_active Withdrawn
- 2001-04-10 JP JP2001574907A patent/JP2003530700A/ja active Pending
- 2001-04-10 EP EP01923789A patent/EP1273046A2/fr not_active Withdrawn
- 2001-04-10 AU AU2001250477A patent/AU2001250477A1/en not_active Abandoned
- 2001-04-10 US US10/239,629 patent/US20040046224A1/en not_active Abandoned
- 2001-04-10 WO PCT/FR2001/001101 patent/WO2001078152A2/fr not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| EP1273046A2 (fr) | 2003-01-08 |
| WO2001078152A3 (fr) | 2002-02-07 |
| US20040046224A1 (en) | 2004-03-11 |
| WO2001078152A2 (fr) | 2001-10-18 |
| FR2807569A1 (fr) | 2001-10-12 |
| KR20030011820A (ko) | 2003-02-11 |
| JP2003530700A (ja) | 2003-10-14 |
| AU2001250477A1 (en) | 2001-10-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| FR2807569B1 (fr) | Perfectionnement apportes aux diodes schottky | |
| DE60142211D1 (de) | Graben - schottkygleichrichter | |
| DE50107556D1 (de) | Graphem-Phonem-Konvertierung | |
| DE60101991D1 (de) | Gleichstrom- zu Gleichstromumwandler | |
| EP1393379A4 (fr) | Redresseur de schottky a tranchee | |
| FI20001055A7 (fi) | Avoauto | |
| DE60118217D1 (de) | Schottky-gleichrichter mit graben | |
| DE60140691D1 (de) | Halbleiterdiodenbauelement | |
| FR2812476B1 (fr) | Convertisseur alternatif-continu | |
| EP1344255A4 (fr) | Diode electroluminescente perfectionnee | |
| DE60322991D1 (de) | Diodeanordnung | |
| DE60124963D1 (de) | Befestigungsmittel | |
| ID29755A (id) | Senyawa-senyawa organosilikon | |
| DE50114882D1 (de) | Schutzanordnung für schottky-diode | |
| DE10194410T1 (de) | Ventilplatte-Schaft-Verbindung | |
| NO20021944L (no) | Slepebåt | |
| DE60330203D1 (de) | Direktumsetzempfänger | |
| DE50115538D1 (de) | Gleichrichteranordnung | |
| DE60317285D1 (de) | Fotoelektrische Umwandlungsvorrichtung | |
| TR200100070A3 (tr) | Bilesim | |
| DE60103797D1 (de) | Befestigungselement | |
| DE50103720D1 (de) | Befestigungselement | |
| DE60213622D1 (de) | Abwärtswandler | |
| DE50111882D1 (de) | Verdeck | |
| DE60111789D1 (de) | Verbesserungen an Werkzeugen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20051230 |