FR2809526B1 - Memoire rom de taille reduite - Google Patents
Memoire rom de taille reduiteInfo
- Publication number
- FR2809526B1 FR2809526B1 FR0006645A FR0006645A FR2809526B1 FR 2809526 B1 FR2809526 B1 FR 2809526B1 FR 0006645 A FR0006645 A FR 0006645A FR 0006645 A FR0006645 A FR 0006645A FR 2809526 B1 FR2809526 B1 FR 2809526B1
- Authority
- FR
- France
- Prior art keywords
- rom memory
- reduced rom
- reduced
- memory
- rom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/067—Single-ended amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
- G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0006645A FR2809526B1 (fr) | 2000-05-24 | 2000-05-24 | Memoire rom de taille reduite |
| PCT/FR2001/001608 WO2001091130A1 (fr) | 2000-05-24 | 2001-05-23 | Memoire rom de taille reduite |
| US10/717,223 US7057916B2 (en) | 2000-05-24 | 2003-11-19 | Small size ROM |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0006645A FR2809526B1 (fr) | 2000-05-24 | 2000-05-24 | Memoire rom de taille reduite |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2809526A1 FR2809526A1 (fr) | 2001-11-30 |
| FR2809526B1 true FR2809526B1 (fr) | 2003-07-25 |
Family
ID=8850571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR0006645A Expired - Fee Related FR2809526B1 (fr) | 2000-05-24 | 2000-05-24 | Memoire rom de taille reduite |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7057916B2 (fr) |
| FR (1) | FR2809526B1 (fr) |
| WO (1) | WO2001091130A1 (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2881565B1 (fr) * | 2005-02-03 | 2007-08-24 | Atmel Corp | Circuits de selection de ligne binaire pour memoires non volatiles |
| FR2888388A1 (fr) * | 2005-07-05 | 2007-01-12 | St Microelectronics Sa | Memoire a lecture seule |
| US8605480B2 (en) * | 2010-12-28 | 2013-12-10 | Stmicroelectronics International N.V. | Read only memory device with complemenary bit line pair |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4495602A (en) * | 1981-12-28 | 1985-01-22 | Mostek Corporation | Multi-bit read only memory circuit |
| US4651305A (en) * | 1985-02-11 | 1987-03-17 | Thomson Components-Mostek Corporation | Sense amplifier bit line isolation scheme |
| US5448517A (en) * | 1987-06-29 | 1995-09-05 | Kabushiki Kaisha Toshiba | Electrically programmable nonvolatile semiconductor memory device with NAND cell structure |
| JP2591314B2 (ja) * | 1989-10-27 | 1997-03-19 | 日本電気株式会社 | 半導体メモリ装置 |
| US5200922A (en) * | 1990-10-24 | 1993-04-06 | Rao Kameswara K | Redundancy circuit for high speed EPROM and flash memory devices |
| EP0526427B1 (fr) * | 1991-07-25 | 1997-10-15 | STMicroelectronics S.r.l. | Amplificateur de détection pour mémoires programmables avec une source virtuelle améliorée de signal |
| JPH07130165A (ja) * | 1993-11-02 | 1995-05-19 | Nippon Steel Corp | Dram型記憶装置 |
| JP3397427B2 (ja) * | 1994-02-02 | 2003-04-14 | 株式会社東芝 | 半導体記憶装置 |
| JP3273582B2 (ja) * | 1994-05-13 | 2002-04-08 | キヤノン株式会社 | 記憶装置 |
| KR100272037B1 (ko) * | 1997-02-27 | 2000-12-01 | 니시무로 타이죠 | 불휘발성 반도체 기억 장치 |
| FR2794277B1 (fr) * | 1999-05-25 | 2001-08-10 | St Microelectronics Sa | Memoire morte a faible consommation |
-
2000
- 2000-05-24 FR FR0006645A patent/FR2809526B1/fr not_active Expired - Fee Related
-
2001
- 2001-05-23 WO PCT/FR2001/001608 patent/WO2001091130A1/fr not_active Ceased
-
2003
- 2003-11-19 US US10/717,223 patent/US7057916B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20040264228A1 (en) | 2004-12-30 |
| WO2001091130A1 (fr) | 2001-11-29 |
| US7057916B2 (en) | 2006-06-06 |
| FR2809526A1 (fr) | 2001-11-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20090119 |