FR2811807B1 - Procede de decoupage d'un bloc de materiau et de formation d'un film mince - Google Patents

Procede de decoupage d'un bloc de materiau et de formation d'un film mince

Info

Publication number
FR2811807B1
FR2811807B1 FR0009129A FR0009129A FR2811807B1 FR 2811807 B1 FR2811807 B1 FR 2811807B1 FR 0009129 A FR0009129 A FR 0009129A FR 0009129 A FR0009129 A FR 0009129A FR 2811807 B1 FR2811807 B1 FR 2811807B1
Authority
FR
France
Prior art keywords
block
separation
zone
embrittled
electronics
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0009129A
Other languages
English (en)
Other versions
FR2811807A1 (fr
Inventor
Bernard Aspar
Chrystelle Lagache
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0009129A priority Critical patent/FR2811807B1/fr
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to PCT/FR2001/002239 priority patent/WO2002005344A1/fr
Priority to JP2002509103A priority patent/JP5111713B2/ja
Priority to DE60133649T priority patent/DE60133649T2/de
Priority to AT01954078T priority patent/ATE392711T1/de
Priority to TW090116949A priority patent/TW505962B/zh
Priority to US10/312,864 priority patent/US7029548B2/en
Priority to MYPI20013297A priority patent/MY137543A/en
Priority to EP01954078A priority patent/EP1299905B1/fr
Priority to AU2001276432A priority patent/AU2001276432A1/en
Priority to KR1020037000449A priority patent/KR100854799B1/ko
Publication of FR2811807A1 publication Critical patent/FR2811807A1/fr
Application granted granted Critical
Publication of FR2811807B1 publication Critical patent/FR2811807B1/fr
Priority to US11/372,542 priority patent/US20060191627A1/en
Priority to JP2012094512A priority patent/JP2012160754A/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H10P54/50—Cutting or separating of wafers, substrates or parts of devices by scoring, breaking or cleaving
    • H10P54/52—Cutting or separating of wafers, substrates or parts of devices by scoring, breaking or cleaving by cleaving
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer
    • B81C2201/0192—Transfer of a layer from a carrier wafer to a device wafer by cleaving the carrier wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1153—Temperature change for delamination [e.g., heating during delaminating, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1153—Temperature change for delamination [e.g., heating during delaminating, etc.]
    • Y10T156/1158—Electromagnetic radiation applied to work for delamination [e.g., microwave, uv, ir, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1168—Gripping and pulling work apart during delaminating
    • Y10T156/1179—Gripping and pulling work apart during delaminating with poking during delaminating [e.g., jabbing, etc.]
    • Y10T156/1184—Piercing layer during delaminating [e.g., cutting, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1911—Heating or cooling delaminating means [e.g., melting means, freezing means, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1961—Severing delaminating means [e.g., chisel, etc.]
    • Y10T156/1967—Cutting delaminating means

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Element Separation (AREA)
  • Physical Vapour Deposition (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Cutting Tools, Boring Holders, And Turrets (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
FR0009129A 2000-07-12 2000-07-12 Procede de decoupage d'un bloc de materiau et de formation d'un film mince Expired - Fee Related FR2811807B1 (fr)

Priority Applications (13)

Application Number Priority Date Filing Date Title
FR0009129A FR2811807B1 (fr) 2000-07-12 2000-07-12 Procede de decoupage d'un bloc de materiau et de formation d'un film mince
KR1020037000449A KR100854799B1 (ko) 2000-07-12 2001-07-11 소정의 물질로 된 블록을 절단하는 방법 및 박막을형성하는 방법
DE60133649T DE60133649T2 (de) 2000-07-12 2001-07-11 Verfahren zur trennung eines materialblocks und bildung eines dünnen films
AT01954078T ATE392711T1 (de) 2000-07-12 2001-07-11 Verfahren zur trennung einer materialblocks und bildung eines dünnen films
TW090116949A TW505962B (en) 2000-07-12 2001-07-11 Process for cutting out a block of material and formation of a thin film
US10/312,864 US7029548B2 (en) 2000-07-12 2001-07-11 Method for cutting a block of material and forming a thin film
PCT/FR2001/002239 WO2002005344A1 (fr) 2000-07-12 2001-07-11 Procede de decoupage d'un bloc de materiau et de formation d'un film mince
EP01954078A EP1299905B1 (fr) 2000-07-12 2001-07-11 Procede de decoupage d'un bloc de materiau et de formation d'un film mince
AU2001276432A AU2001276432A1 (en) 2000-07-12 2001-07-11 Method for cutting a block of material and for forming a thin film
JP2002509103A JP5111713B2 (ja) 2000-07-12 2001-07-11 材料ブロックを切り取るための方法ならびに薄膜の形成方法
MYPI20013297A MY137543A (en) 2000-07-12 2001-07-11 Process for cutting out a block of material and formation of a thin film
US11/372,542 US20060191627A1 (en) 2000-07-12 2006-03-10 Process for cutting out a block of material and formation of a thin film
JP2012094512A JP2012160754A (ja) 2000-07-12 2012-04-18 材料ブロックを切り取るための方法ならびに薄膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0009129A FR2811807B1 (fr) 2000-07-12 2000-07-12 Procede de decoupage d'un bloc de materiau et de formation d'un film mince

Publications (2)

Publication Number Publication Date
FR2811807A1 FR2811807A1 (fr) 2002-01-18
FR2811807B1 true FR2811807B1 (fr) 2003-07-04

Family

ID=8852419

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0009129A Expired - Fee Related FR2811807B1 (fr) 2000-07-12 2000-07-12 Procede de decoupage d'un bloc de materiau et de formation d'un film mince

Country Status (11)

Country Link
US (2) US7029548B2 (fr)
EP (1) EP1299905B1 (fr)
JP (2) JP5111713B2 (fr)
KR (1) KR100854799B1 (fr)
AT (1) ATE392711T1 (fr)
AU (1) AU2001276432A1 (fr)
DE (1) DE60133649T2 (fr)
FR (1) FR2811807B1 (fr)
MY (1) MY137543A (fr)
TW (1) TW505962B (fr)
WO (1) WO2002005344A1 (fr)

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FR2811807B1 (fr) * 2000-07-12 2003-07-04 Commissariat Energie Atomique Procede de decoupage d'un bloc de materiau et de formation d'un film mince
FR2823596B1 (fr) * 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
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TWI430338B (zh) * 2008-10-30 2014-03-11 康寧公司 使用定向剝離作用製造絕緣體上半導體結構之方法及裝置
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AU2001276432A1 (en) 2002-01-21
EP1299905A1 (fr) 2003-04-09
JP2012160754A (ja) 2012-08-23
US20030234075A1 (en) 2003-12-25
US7029548B2 (en) 2006-04-18
FR2811807A1 (fr) 2002-01-18
KR100854799B1 (ko) 2008-08-27
DE60133649D1 (de) 2008-05-29
MY137543A (en) 2009-02-27
ATE392711T1 (de) 2008-05-15
JP5111713B2 (ja) 2013-01-09
EP1299905B1 (fr) 2008-04-16
KR20030015384A (ko) 2003-02-20
TW505962B (en) 2002-10-11
DE60133649T2 (de) 2009-05-20
WO2002005344A1 (fr) 2002-01-17
US20060191627A1 (en) 2006-08-31

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