ATE437980T1 - Verfahren und vorrichtung zur herstellung von substraten - Google Patents

Verfahren und vorrichtung zur herstellung von substraten

Info

Publication number
ATE437980T1
ATE437980T1 AT01919609T AT01919609T ATE437980T1 AT E437980 T1 ATE437980 T1 AT E437980T1 AT 01919609 T AT01919609 T AT 01919609T AT 01919609 T AT01919609 T AT 01919609T AT E437980 T1 ATE437980 T1 AT E437980T1
Authority
AT
Austria
Prior art keywords
depth
ingot
cylindrical
implantation
layer
Prior art date
Application number
AT01919609T
Other languages
English (en)
Inventor
Atsushi Iwasaki
Bruno Ghyselen
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Application granted granted Critical
Publication of ATE437980T1 publication Critical patent/ATE437980T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Diaphragms For Electromechanical Transducers (AREA)
AT01919609T 2000-04-03 2001-04-02 Verfahren und vorrichtung zur herstellung von substraten ATE437980T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0004210A FR2807074B1 (fr) 2000-04-03 2000-04-03 Procede et dispositif de fabrication de substrats
PCT/FR2001/000976 WO2001075196A1 (fr) 2000-04-03 2001-04-02 Procede et dispositif de fabrication de substrats

Publications (1)

Publication Number Publication Date
ATE437980T1 true ATE437980T1 (de) 2009-08-15

Family

ID=8848788

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01919609T ATE437980T1 (de) 2000-04-03 2001-04-02 Verfahren und vorrichtung zur herstellung von substraten

Country Status (11)

Country Link
US (1) US6855619B2 (de)
EP (1) EP1268884B1 (de)
JP (1) JP4597462B2 (de)
KR (1) KR100749597B1 (de)
AT (1) ATE437980T1 (de)
AU (1) AU2001246670A1 (de)
DE (1) DE60139385D1 (de)
FR (1) FR2807074B1 (de)
MY (1) MY128008A (de)
TW (1) TWI286166B (de)
WO (1) WO2001075196A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6159824A (en) 1997-05-12 2000-12-12 Silicon Genesis Corporation Silicon-on-silicon wafer bonding process using a thin film blister-separation method
US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
FR2842650B1 (fr) * 2002-07-17 2005-09-02 Soitec Silicon On Insulator Procede de fabrication de substrats notamment pour l'optique, l'electronique ou l'opto-electronique
EP1537258B9 (de) * 2002-07-17 2008-10-29 S.O.I.Tec Silicon on Insulator Technologies Verfahren zur herstellung von substraten, insbesondere für die optik, elektronik und optoelektronik
US7538010B2 (en) * 2003-07-24 2009-05-26 S.O.I.Tec Silicon On Insulator Technologies Method of fabricating an epitaxially grown layer
FR2857982B1 (fr) * 2003-07-24 2007-05-18 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiee
FR2857983B1 (fr) * 2003-07-24 2005-09-02 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiee
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
FR2906077B1 (fr) * 2006-09-18 2009-03-06 Michel Roche Procede et appareillages associes, destine a la fabrication de substrats semiconducteurs poly ou monocristallins minces
US8124499B2 (en) * 2006-11-06 2012-02-28 Silicon Genesis Corporation Method and structure for thick layer transfer using a linear accelerator
US20080128641A1 (en) * 2006-11-08 2008-06-05 Silicon Genesis Corporation Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials
US20080188011A1 (en) * 2007-01-26 2008-08-07 Silicon Genesis Corporation Apparatus and method of temperature conrol during cleaving processes of thick film materials
DE102007018080B3 (de) * 2007-04-17 2008-06-19 Eisele, Christopher, Dr. Verfahren und Vorrichtung zur Herstellung von dünnen Scheiben oder Folien aus Halbleiterkörpern
WO2009057667A1 (en) * 2007-10-29 2009-05-07 Semiconductor Energy Laboratory Co., Ltd. Formation method of single crystal semiconductor layer, formation method of crystalline semiconductor layer, formation method of polycrystalline layer, and method for manufacturing semiconductor device
WO2009092926A1 (fr) * 2008-01-21 2009-07-30 Michel Roche Procédé et appareillages associés, destiné à la fabrication de substrats semiconducteurs, poly ou monocristallins minces
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US7927975B2 (en) * 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
US9196503B2 (en) * 2012-08-23 2015-11-24 Michael Xiaoxuan Yang Methods for fabricating devices on semiconductor substrates
AU2015219029A1 (en) * 2014-02-18 2016-09-01 Rayton Solar Inc. Float zone silicon wafer manufacturing system

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2427645A1 (de) * 1974-06-07 1976-01-02 Siemens Ag Verfahren zum gezielten einbringen von dotierungsmaterial in einen halbleiterkristallstab
FR2752768B1 (fr) * 1996-08-27 2003-04-11 Commissariat Energie Atomique Procede d'obtention d'une plaquette de materiau semiconducteur de grandes dimensions et utilisation de la plaquette obtenue pour realiser des substrats du type semiconducteur sur isolant
JPH1093122A (ja) * 1996-09-10 1998-04-10 Nippon Telegr & Teleph Corp <Ntt> 薄膜太陽電池の製造方法
FR2756847B1 (fr) * 1996-12-09 1999-01-08 Commissariat Energie Atomique Procede de separation d'au moins deux elements d'une structure en contact entre eux par implantation ionique
US6150239A (en) * 1997-05-31 2000-11-21 Max Planck Society Method for the transfer of thin layers monocrystalline material onto a desirable substrate
US5877070A (en) * 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate
US5899939A (en) * 1998-01-21 1999-05-04 Osteotech, Inc. Bone-derived implant for load-supporting applications
FR2774510B1 (fr) * 1998-02-02 2001-10-26 Soitec Silicon On Insulator Procede de traitement de substrats, notamment semi-conducteurs
US6120597A (en) * 1998-02-17 2000-09-19 The Trustees Of Columbia University In The City Of New York Crystal ion-slicing of single-crystal films
US6503321B2 (en) * 1998-02-17 2003-01-07 The Trustees Of Columbia University In The City Of New York Slicing of single-crystal films using ion implantation

Also Published As

Publication number Publication date
JP4597462B2 (ja) 2010-12-15
WO2001075196A1 (fr) 2001-10-11
MY128008A (en) 2007-01-31
JP2003529526A (ja) 2003-10-07
US20030186493A1 (en) 2003-10-02
KR20030001401A (ko) 2003-01-06
FR2807074B1 (fr) 2002-12-06
KR100749597B1 (ko) 2007-08-14
DE60139385D1 (de) 2009-09-10
EP1268884A1 (de) 2003-01-02
EP1268884B1 (de) 2009-07-29
AU2001246670A1 (en) 2001-10-15
US6855619B2 (en) 2005-02-15
FR2807074A1 (fr) 2001-10-05
TWI286166B (en) 2007-09-01

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