FR2814609B1 - Circuit d'amplificateur operationnel - Google Patents

Circuit d'amplificateur operationnel

Info

Publication number
FR2814609B1
FR2814609B1 FR0114590A FR0114590A FR2814609B1 FR 2814609 B1 FR2814609 B1 FR 2814609B1 FR 0114590 A FR0114590 A FR 0114590A FR 0114590 A FR0114590 A FR 0114590A FR 2814609 B1 FR2814609 B1 FR 2814609B1
Authority
FR
France
Prior art keywords
current
transistors
transistor
bias
differential pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0114590A
Other languages
English (en)
Other versions
FR2814609A1 (fr
Inventor
Hisao Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000142960A external-priority patent/JP4429475B2/ja
Priority claimed from JP2000230498A external-priority patent/JP3863355B2/ja
Priority claimed from JP2000230497A external-priority patent/JP4627106B2/ja
Priority claimed from JP2000230995A external-priority patent/JP4485665B2/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of FR2814609A1 publication Critical patent/FR2814609A1/fr
Application granted granted Critical
Publication of FR2814609B1 publication Critical patent/FR2814609B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/26—Push-pull amplifiers; Phase-splitters therefor
    • H03F3/265—Push-pull amplifiers; Phase-splitters therefor with field-effect transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45695—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedforward means
    • H03F3/45699—Measuring at the input circuit of the differential amplifier
    • H03F3/45717—Controlling the loading circuit of the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3022—CMOS common source output SEPP amplifiers
    • H03F3/3023—CMOS common source output SEPP amplifiers with asymmetrical driving of the end stage
    • H03F3/3027—CMOS common source output SEPP amplifiers with asymmetrical driving of the end stage using a common source driving stage, i.e. inverting stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/4521—Complementary long tailed pairs having parallel inputs and being supplied in parallel
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/4521—Complementary long tailed pairs having parallel inputs and being supplied in parallel
    • H03F3/45219—Folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45237—Complementary long tailed pairs having parallel inputs and being supplied in series
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45695—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedforward means
    • H03F3/45699—Measuring at the input circuit of the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45695—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedforward means
    • H03F3/45699—Measuring at the input circuit of the differential amplifier
    • H03F3/45708—Controlling the common source circuit of the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45508—Indexing scheme relating to differential amplifiers the CSC comprising a voltage generating circuit as bias circuit for the CSC

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
FR0114590A 2000-05-16 2001-11-12 Circuit d'amplificateur operationnel Expired - Fee Related FR2814609B1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000142960A JP4429475B2 (ja) 2000-05-16 2000-05-16 オペアンプ回路
JP2000230498A JP3863355B2 (ja) 2000-07-31 2000-07-31 オペアンプ回路のバイアス電流制御方法、オペアンプ回路及び半導体装置
JP2000230497A JP4627106B2 (ja) 2000-07-31 2000-07-31 オペアンプ回路、電流出力回路及び半導体装置
JP2000230995A JP4485665B2 (ja) 2000-07-31 2000-07-31 電流出力回路、オペアンプ回路及び半導体装置

Publications (2)

Publication Number Publication Date
FR2814609A1 FR2814609A1 (fr) 2002-03-29
FR2814609B1 true FR2814609B1 (fr) 2005-09-30

Family

ID=27481294

Family Applications (4)

Application Number Title Priority Date Filing Date
FR0103594A Expired - Fee Related FR2809244B1 (fr) 2000-05-16 2001-03-16 Circuit d'amplificateur operationnel
FR0114590A Expired - Fee Related FR2814609B1 (fr) 2000-05-16 2001-11-12 Circuit d'amplificateur operationnel
FR0114593A Expired - Fee Related FR2814554B1 (fr) 2000-05-16 2001-11-12 Circuit d'amplificateur operationnel
FR0114592A Expired - Fee Related FR2814608B1 (fr) 2000-05-16 2001-11-12 Circuit d'amplificateur operationnel

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR0103594A Expired - Fee Related FR2809244B1 (fr) 2000-05-16 2001-03-16 Circuit d'amplificateur operationnel

Family Applications After (2)

Application Number Title Priority Date Filing Date
FR0114593A Expired - Fee Related FR2814554B1 (fr) 2000-05-16 2001-11-12 Circuit d'amplificateur operationnel
FR0114592A Expired - Fee Related FR2814608B1 (fr) 2000-05-16 2001-11-12 Circuit d'amplificateur operationnel

Country Status (3)

Country Link
US (3) US6605993B2 (fr)
KR (3) KR100731226B1 (fr)
FR (4) FR2809244B1 (fr)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7569849B2 (en) * 2001-02-16 2009-08-04 Ignis Innovation Inc. Pixel driver circuit and pixel circuit having the pixel driver circuit
CA2419704A1 (fr) 2003-02-24 2004-08-24 Ignis Innovation Inc. Methode de fabrication d'un pixel au moyen d'une diode electroluminescente organique
JP3759117B2 (ja) * 2003-03-28 2006-03-22 川崎マイクロエレクトロニクス株式会社 Ｉ／ｖ変換回路およびｄａコンバータ
US7364547B2 (en) * 2003-09-18 2008-04-29 Cardiac Pacemakers, Inc. Use of external respiratory therapy device to detect cardiac electrical activity
EP1511171B1 (fr) * 2003-08-27 2007-12-12 Infineon Technologies AG Tampon à plage de signal d'entrée couvrant la tension d'alimentation
JP3888350B2 (ja) * 2003-12-10 2007-02-28 セイコーエプソン株式会社 演算増幅器及びこれを用いた駆動回路
US7091783B2 (en) * 2004-01-14 2006-08-15 Agere Systems Inc. Rejection circuitry for variable-gain amplifiers and continuous-time filters
KR100558571B1 (ko) * 2004-03-03 2006-03-13 삼성전자주식회사 반도체 메모리 장치의 전류 센스앰프 회로
US7088160B2 (en) * 2004-04-08 2006-08-08 Infineon Technologies Ag Circuit arrangement for regulating a parameter of an electrical signal
JP4406030B2 (ja) * 2004-06-15 2010-01-27 アナログ デバイセス インコーポレーテッド 高精度のチョッパ安定化電流ミラー
CA2472671A1 (fr) 2004-06-29 2005-12-29 Ignis Innovation Inc. Procede de programmation par tensions pour affichages a del excitees par courant
US7386737B2 (en) * 2004-11-02 2008-06-10 Intel Corporation Method and apparatus to control temperature of processor
CA2495726A1 (fr) 2005-01-28 2006-07-28 Ignis Innovation Inc. Pixel programme par tension a reference locale pour affichages amoled
US7256605B2 (en) * 2005-11-14 2007-08-14 Semiconductor Components Industries, L.L.C. Diagnostic circuit and method therefor
JP2007180796A (ja) * 2005-12-27 2007-07-12 Fujitsu Ltd 差動増幅回路
US7196573B1 (en) 2006-02-02 2007-03-27 Agere Systems Inc. Systems and methods for creating complex poles
KR20090006198A (ko) 2006-04-19 2009-01-14 이그니스 이노베이션 인크. 능동형 디스플레이를 위한 안정적 구동 방식
US20080030240A1 (en) * 2006-08-04 2008-02-07 Eric Scheuerlein Low systematic offset, temperature independent voltage buffering
US7622990B2 (en) * 2006-08-30 2009-11-24 Micron Technology, Inc. Amplifiers, methods of increasing current gain in amplifiers, and imaging devices
US7396762B2 (en) * 2006-08-30 2008-07-08 International Business Machines Corporation Interconnect structures with linear repair layers and methods for forming such interconnection structures
JP5028972B2 (ja) * 2006-11-27 2012-09-19 富士通セミコンダクター株式会社 オペアンプ回路
US7439804B2 (en) * 2007-03-05 2008-10-21 Intel Corporation Amplifier with level shifting feedback network
US7554405B2 (en) * 2007-05-02 2009-06-30 Samsung Electronics Co., Ltd. Adaptive biasing input stage and amplifiers including the same
RU2332782C1 (ru) * 2007-05-24 2008-08-27 ГОУ ВПО "Южно-Российский государственный университет экономики и сервиса" (ЮРГУЭС) Дифференциальный усилитель с повышенным ослаблением синфазного сигнала
US8121186B2 (en) 2008-06-06 2012-02-21 Lsi Corporation Systems and methods for speculative signal equalization
US7973692B2 (en) 2008-06-06 2011-07-05 Lsi Corporation Systems and methods for synchronous, retimed analog to digital conversion
EP2198519A4 (fr) 2008-06-06 2012-10-31 Lsi Corp Systèmes et procédés de conversion analogique-numérique recalée synchrone
JP5504032B2 (ja) * 2009-06-05 2014-05-28 ローム株式会社 オーディオ信号増幅回路
US8283967B2 (en) 2009-11-12 2012-10-09 Ignis Innovation Inc. Stable current source for system integration to display substrate
JP5446895B2 (ja) * 2010-01-12 2014-03-19 株式会社リコー アンプ
US8574960B2 (en) * 2010-02-03 2013-11-05 Stats Chippac, Ltd. Semiconductor device and method of forming cavity adjacent to sensitive region of semiconductor die using wafer-level underfill material
CN101895264B (zh) * 2010-07-09 2012-07-04 复旦大学 用于流水线模数转换器的高速低功耗大摆幅运算放大器
US8193961B2 (en) 2010-09-23 2012-06-05 Lsi Corporation Systems and methods for enhancing analog to digital conversion resolution
CN109272933A (zh) 2011-05-17 2019-01-25 伊格尼斯创新公司 操作显示器的方法
US9606607B2 (en) 2011-05-17 2017-03-28 Ignis Innovation Inc. Systems and methods for display systems with dynamic power control
CN103687536B (zh) * 2011-06-20 2017-03-08 加利福尼亚大学董事会 神经元记录系统
US9070775B2 (en) 2011-08-03 2015-06-30 Ignis Innovations Inc. Thin film transistor
US8901579B2 (en) 2011-08-03 2014-12-02 Ignis Innovation Inc. Organic light emitting diode and method of manufacturing
US9385169B2 (en) 2011-11-29 2016-07-05 Ignis Innovation Inc. Multi-functional active matrix organic light-emitting diode display
US10089924B2 (en) 2011-11-29 2018-10-02 Ignis Innovation Inc. Structural and low-frequency non-uniformity compensation
US9721505B2 (en) 2013-03-08 2017-08-01 Ignis Innovation Inc. Pixel circuits for AMOLED displays
CN103137072B (zh) 2013-03-14 2015-05-20 京东方科技集团股份有限公司 外部补偿感应电路及其感应方法、显示装置
CN105247462A (zh) 2013-03-15 2016-01-13 伊格尼斯创新公司 Amoled显示器的触摸分辨率的动态调整
CN103247261B (zh) 2013-04-25 2015-08-12 京东方科技集团股份有限公司 外部补偿感应电路及其感应方法、显示装置
US9502653B2 (en) 2013-12-25 2016-11-22 Ignis Innovation Inc. Electrode contacts
US10997901B2 (en) 2014-02-28 2021-05-04 Ignis Innovation Inc. Display system
US10176752B2 (en) 2014-03-24 2019-01-08 Ignis Innovation Inc. Integrated gate driver
KR101715446B1 (ko) * 2014-06-11 2017-03-14 이화여자대학교 산학협력단 차동 전달 임피던스 증폭기
US10044362B2 (en) * 2014-06-19 2018-08-07 Texas Instruments Incorporated Complementary current reusing preamp for operational amplifier
CA2872563A1 (fr) 2014-11-28 2016-05-28 Ignis Innovation Inc. Architecture de reseau a densite de pixels elevee
US11017983B2 (en) * 2015-02-18 2021-05-25 Reno Technologies, Inc. RF power amplifier
KR101735800B1 (ko) * 2015-04-02 2017-05-16 한국과학기술원 원격으로 바이어스 전류를 제어할 수 있는 제어 회로 및 이를 포함하는 차동 증폭 장치
US10657895B2 (en) 2015-07-24 2020-05-19 Ignis Innovation Inc. Pixels and reference circuits and timing techniques
US10373554B2 (en) 2015-07-24 2019-08-06 Ignis Innovation Inc. Pixels and reference circuits and timing techniques
CA2898282A1 (fr) 2015-07-24 2017-01-24 Ignis Innovation Inc. Etalonnage hybride de sources de courant destine a des afficheurs a tension polarisee par courant programmes
CA2909813A1 (fr) 2015-10-26 2017-04-26 Ignis Innovation Inc Orientation de motif ppi dense
KR102627275B1 (ko) * 2016-10-25 2024-01-23 엘지디스플레이 주식회사 유기 발광 표시 장치
US10586491B2 (en) 2016-12-06 2020-03-10 Ignis Innovation Inc. Pixel circuits for mitigation of hysteresis
FR3063587B1 (fr) * 2017-03-06 2019-04-12 Devialet Oscillateur commande en tension
US10714018B2 (en) 2017-05-17 2020-07-14 Ignis Innovation Inc. System and method for loading image correction data for displays
US11025899B2 (en) 2017-08-11 2021-06-01 Ignis Innovation Inc. Optical correction systems and methods for correcting non-uniformity of emissive display devices
CN109412541B (zh) * 2017-08-17 2022-05-31 博通集成电路（上海）股份有限公司 运算放大器的输出级和运算放大器中的方法
TWI633408B (zh) * 2017-08-17 2018-08-21 力晶科技股份有限公司 穩壓輸出裝置
US10971078B2 (en) 2018-02-12 2021-04-06 Ignis Innovation Inc. Pixel measurement through data line
WO2019244374A1 (fr) 2018-06-22 2019-12-26 ローム株式会社 Source d'alimentation à découpage, dispositif à circuit intégré à semi-conducteur et circuit d'entrée différentielle
KR102816760B1 (ko) * 2019-06-21 2025-06-09 삼성전자주식회사 적은 노이즈를 포함하는 전압을 출력하도록 구성되는 증폭 회로를 구성하기 위한 전자 회로
CN113364278B (zh) * 2020-04-08 2022-07-12 澜起电子科技(昆山)有限公司 开关电流源电路及开关电流源快速建立方法
CN116373180B (zh) * 2023-03-19 2024-02-06 珩星电子（连云港）股份有限公司 一种线缆冷却组件
CN119376484B (zh) * 2024-12-27 2025-05-02 南京优存科技有限公司 推挽式电压输出级电路、稳压器电路及芯片

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4267517A (en) * 1977-12-07 1981-05-12 Tokyo Shibaura Denki Kabushiki Kaisha Operational amplifier
US4797631A (en) * 1987-11-24 1989-01-10 Texas Instruments Incorporated Folded cascode amplifier with rail-to-rail common-mode range
US5220288A (en) * 1992-06-01 1993-06-15 Motorola, Inc. Continuous-time differential amplifier with low offset voltage
JPH06124760A (ja) * 1992-10-08 1994-05-06 Hirose Electric Co Ltd コネクタ供給装置
JPH06149966A (ja) * 1992-11-06 1994-05-31 Toshiba Corp 図面作成装置
JP3109931B2 (ja) * 1992-12-24 2000-11-20 キヤノン株式会社 現像装置
JPH06194966A (ja) * 1992-12-25 1994-07-15 Sharp Corp 画像形成装置
JPH06275109A (ja) * 1993-03-24 1994-09-30 Toshiba Lighting & Technol Corp 着色ガラス基体、照明用ガラスグローブ、照明器具および静電塗装膜の製造方法ならびに粉体
US5311145A (en) * 1993-03-25 1994-05-10 North American Philips Corporation Combination driver-summing circuit for rail-to-rail differential amplifier
US5384548A (en) 1993-08-25 1995-01-24 The Ohio State University Constant transconductance bias circuit and method
US5398005A (en) 1993-09-28 1995-03-14 National Semiconductor Corporation Voss tone control circuit with reduced distortion and reduced DC offset
US5523718A (en) * 1994-08-03 1996-06-04 Analog Devices, Inc. Balanced double-folded cascode operational amplifier
US5475343A (en) * 1994-08-15 1995-12-12 Elantec, Inc. Class AB complementary output stage
JPH08237054A (ja) * 1995-03-01 1996-09-13 Nec Corp 利得可変回路
US5610557A (en) * 1995-06-07 1997-03-11 Linear Technology Corporation Method and circuit for trimming an operational amplifier having dual input stages
US5714906A (en) * 1995-08-14 1998-02-03 Motamed; Ali Constant transductance input stage and integrated circuit implementations thereof
US5631607A (en) * 1995-09-06 1997-05-20 Philips Electronics North America Corporation Compact GM-control for CMOS rail-to-rail input stages by regulating the sum of the gate-source voltages constant
US5801564A (en) * 1996-06-28 1998-09-01 Symbios, Inc. Reduced skew differential receiver
US5856749A (en) * 1996-11-01 1999-01-05 Burr-Brown Corporation Stable output bias current circuitry and method for low-impedance CMOS output stage
JP3415741B2 (ja) 1997-03-31 2003-06-09 東レ・ダウコーニング・シリコーン株式会社 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法
US5936466A (en) * 1997-08-04 1999-08-10 International Business Machines Corporation Differential operational transconductance amplifier
JPH11163644A (ja) * 1997-11-26 1999-06-18 Fujitsu Ltd 差動増幅回路の出力回路
KR100313504B1 (ko) * 1999-02-12 2002-01-19 김영환 알티알 입력단의 트랜스컨덕턴스 제어회로
US6194966B1 (en) * 1999-02-12 2001-02-27 Tritech Microelectronics, Ltd. Cmos class ab operational amplifier operating from a single 1.5v cell
US6194962B1 (en) * 1999-04-13 2001-02-27 Analog Devices, Inc. Adaptive operational amplifier offset voltage trimming system
JP4015319B2 (ja) * 1999-07-12 2007-11-28 富士通株式会社 定電流発生回路および差動増幅回路
US6275109B1 (en) 1999-08-02 2001-08-14 Agere Systems Guardian Corp. Low noise microphone preamplifier

Also Published As

Publication number Publication date
FR2809244B1 (fr) 2004-11-26
US20030206059A1 (en) 2003-11-06
KR20070032987A (ko) 2007-03-23
KR20010105154A (ko) 2001-11-28
KR100731226B1 (ko) 2007-06-22
FR2809244A1 (fr) 2001-11-23
FR2814609A1 (fr) 2002-03-29
US6605993B2 (en) 2003-08-12
KR100719419B1 (ko) 2007-05-18
US6919766B2 (en) 2005-07-19
FR2814608B1 (fr) 2005-06-24
US20010052818A1 (en) 2001-12-20
KR100742803B1 (ko) 2007-07-25
KR20060113624A (ko) 2006-11-02
FR2814554A1 (fr) 2002-03-29
FR2814608A1 (fr) 2002-03-29
FR2814554B1 (fr) 2005-05-27
US6794940B2 (en) 2004-09-21
US20030206060A1 (en) 2003-11-06

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