FR2820201B1 - Capteur de quantite dynamique a semiconducteur - Google Patents

Capteur de quantite dynamique a semiconducteur

Info

Publication number
FR2820201B1
FR2820201B1 FR0201182A FR0201182A FR2820201B1 FR 2820201 B1 FR2820201 B1 FR 2820201B1 FR 0201182 A FR0201182 A FR 0201182A FR 0201182 A FR0201182 A FR 0201182A FR 2820201 B1 FR2820201 B1 FR 2820201B1
Authority
FR
France
Prior art keywords
quantity sensor
dynamic quantity
semiconductor dynamic
semiconductor
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0201182A
Other languages
English (en)
Other versions
FR2820201A1 (fr
Inventor
Shinji Yoshihara
Yasutoshi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of FR2820201A1 publication Critical patent/FR2820201A1/fr
Application granted granted Critical
Publication of FR2820201B1 publication Critical patent/FR2820201B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
FR0201182A 2001-01-31 2002-01-31 Capteur de quantite dynamique a semiconducteur Expired - Fee Related FR2820201B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001024187 2001-01-31
JP2001113078 2001-04-11
JP2001221697A JP4843877B2 (ja) 2001-01-31 2001-07-23 半導体力学量センサ

Publications (2)

Publication Number Publication Date
FR2820201A1 FR2820201A1 (fr) 2002-08-02
FR2820201B1 true FR2820201B1 (fr) 2005-07-01

Family

ID=27345870

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0201182A Expired - Fee Related FR2820201B1 (fr) 2001-01-31 2002-01-31 Capteur de quantite dynamique a semiconducteur

Country Status (4)

Country Link
US (1) US6658948B2 (fr)
JP (1) JP4843877B2 (fr)
DE (1) DE10203631B4 (fr)
FR (1) FR2820201B1 (fr)

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Publication number Priority date Publication date Assignee Title
JP3915586B2 (ja) * 2002-04-24 2007-05-16 株式会社デンソー 力学量検出装置の製造方法
JP3915620B2 (ja) 2002-07-25 2007-05-16 株式会社デンソー 半導体力学量センサ
WO2004077072A1 (fr) * 2003-02-28 2004-09-10 Hokuriku Electric Industry Co., Ltd. Detecteur d'acceleration a semi-conducteur
DE102004009272A1 (de) * 2004-02-26 2005-09-15 Robert Bosch Gmbh Hochdrucksensor zur druckunabhängigen Temperaturmessung
US7730785B2 (en) * 2006-04-26 2010-06-08 Denso Corporation Ultrasonic sensor and manufacture method of the same
DE102008011942A1 (de) * 2008-02-29 2009-09-03 Robert Bosch Gmbh Schaltungsanordnung
CN103943289B (zh) * 2008-11-06 2017-09-19 韦沙戴尔电子公司 四端子电阻器
JP5299254B2 (ja) * 2009-12-14 2013-09-25 三菱電機株式会社 半導体圧力センサ及びその製造方法
KR101193501B1 (ko) 2010-05-26 2012-10-22 대양전기공업 주식회사 이에스피용 자동차 압력센서 제조방법 및 그 방법에 의해 제조된 압력센서
CA2806486C (fr) * 2011-02-07 2017-03-21 The Governors Of The University Of Alberta Capteur de charge piezoresistif
EP2955492B1 (fr) * 2014-06-13 2017-05-10 Nxp B.V. Système de capteur avec une configuration de pont complet de quatre éléments de détection résistifs
EP3128305B1 (fr) 2015-08-07 2019-07-31 Sensata Technologies, Inc. Capteur de pression hermétique
RU2606550C1 (ru) * 2015-08-21 2017-01-10 Общество с ограниченной ответственностью "МСИДАТ" Микросистемы и датчики" Чувствительный элемент преобразователя давления и температуры
US10107873B2 (en) * 2016-03-10 2018-10-23 Allegro Microsystems, Llc Electronic circuit for compensating a sensitivity drift of a hall effect element due to stress
CN107290099B (zh) 2016-04-11 2021-06-08 森萨塔科技公司 压力传感器、用于压力传感器的插塞件和制造插塞件的方法
EP3236226B1 (fr) * 2016-04-20 2019-07-24 Sensata Technologies, Inc. Procédé de fabrication d'un capteur de pression
GB2552025B (en) 2016-07-08 2020-08-12 Sovex Ltd Boom conveyor
US10162017B2 (en) 2016-07-12 2018-12-25 Allegro Microsystems, Llc Systems and methods for reducing high order hall plate sensitivity temperature coefficients
US20180180494A1 (en) * 2016-12-22 2018-06-28 Honeywell International Inc. High Sensitivity Silicon Piezoresistor Force Sensor
US10545064B2 (en) 2017-05-04 2020-01-28 Sensata Technologies, Inc. Integrated pressure and temperature sensor
US10323998B2 (en) 2017-06-30 2019-06-18 Sensata Technologies, Inc. Fluid pressure sensor
US10724907B2 (en) 2017-07-12 2020-07-28 Sensata Technologies, Inc. Pressure sensor element with glass barrier material configured for increased capacitive response
US10520559B2 (en) 2017-08-14 2019-12-31 Allegro Microsystems, Llc Arrangements for Hall effect elements and vertical epi resistors upon a substrate
US10557770B2 (en) 2017-09-14 2020-02-11 Sensata Technologies, Inc. Pressure sensor with improved strain gauge
JP6908198B2 (ja) * 2018-10-26 2021-07-21 富士電機株式会社 圧力センサ
CN113348348B (zh) * 2019-02-28 2023-11-17 阿尔卑斯阿尔派株式会社 压力传感器
EP4379338A4 (fr) * 2021-06-28 2025-10-08 Nagano Keiki Co Ltd Module de capteur et procédé de fabrication d'un module de capteur
CN116067559A (zh) * 2022-12-21 2023-05-05 松诺盟科技有限公司 一种高静压纳米膜差压变送器
CN116147823B (zh) * 2022-12-21 2024-03-22 松诺盟科技有限公司 一种平膜型薄膜芯体及平膜型纳米薄膜压力变送器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6024109A (ja) 1983-07-18 1985-02-06 株式会社クボタ 自動走行作業車
JPS6077470A (ja) * 1983-10-04 1985-05-02 Nec Corp ダイアフラム型半導体圧力センサ
JPH0262928A (ja) * 1988-03-24 1990-03-02 Komatsu Ltd 薄膜圧力センサ
JP2615887B2 (ja) * 1988-07-29 1997-06-04 株式会社デンソー 半導体圧力センサ
JP2508278B2 (ja) * 1989-07-14 1996-06-19 三菱電機株式会社 横流検出センサ
JPH06265427A (ja) * 1993-03-15 1994-09-22 Matsushita Electron Corp 半導体圧力変換器
WO1995008756A1 (fr) * 1993-09-20 1995-03-30 Kabushiki Kaisha Komatsu Seisakusho Capteur de pression
DE19527687A1 (de) 1995-07-28 1997-01-30 Bosch Gmbh Robert Sensor
US6448624B1 (en) * 1996-08-09 2002-09-10 Denso Corporation Semiconductor acceleration sensor
JP4438193B2 (ja) * 1999-09-24 2010-03-24 株式会社デンソー 圧力センサ
JP2002039891A (ja) * 2000-07-28 2002-02-06 Denso Corp 圧力検出装置

Also Published As

Publication number Publication date
US6658948B2 (en) 2003-12-09
JP4843877B2 (ja) 2011-12-21
US20020100948A1 (en) 2002-08-01
DE10203631A1 (de) 2003-02-13
FR2820201A1 (fr) 2002-08-02
JP2002373991A (ja) 2002-12-26
DE10203631B4 (de) 2009-11-19

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20150930