FR2824423B1 - Procede de fabrication d'un composant tel qu'une capacite dans un circuit integre et composant de circuit integre - Google Patents

Procede de fabrication d'un composant tel qu'une capacite dans un circuit integre et composant de circuit integre

Info

Publication number
FR2824423B1
FR2824423B1 FR0105881A FR0105881A FR2824423B1 FR 2824423 B1 FR2824423 B1 FR 2824423B1 FR 0105881 A FR0105881 A FR 0105881A FR 0105881 A FR0105881 A FR 0105881A FR 2824423 B1 FR2824423 B1 FR 2824423B1
Authority
FR
France
Prior art keywords
integrated circuit
component
capacity
manufacturing
circuit component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0105881A
Other languages
English (en)
Other versions
FR2824423A1 (fr
Inventor
Pascale Mazoyer
Christian Caillat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0105881A priority Critical patent/FR2824423B1/fr
Priority to US10/136,682 priority patent/US7008842B2/en
Publication of FR2824423A1 publication Critical patent/FR2824423A1/fr
Application granted granted Critical
Publication of FR2824423B1 publication Critical patent/FR2824423B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
FR0105881A 2001-05-02 2001-05-02 Procede de fabrication d'un composant tel qu'une capacite dans un circuit integre et composant de circuit integre Expired - Fee Related FR2824423B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0105881A FR2824423B1 (fr) 2001-05-02 2001-05-02 Procede de fabrication d'un composant tel qu'une capacite dans un circuit integre et composant de circuit integre
US10/136,682 US7008842B2 (en) 2001-05-02 2002-05-01 Process for fabricating a component, such as a capacitor in an integrated circuit, and integrated-circuit component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0105881A FR2824423B1 (fr) 2001-05-02 2001-05-02 Procede de fabrication d'un composant tel qu'une capacite dans un circuit integre et composant de circuit integre

Publications (2)

Publication Number Publication Date
FR2824423A1 FR2824423A1 (fr) 2002-11-08
FR2824423B1 true FR2824423B1 (fr) 2003-09-05

Family

ID=8862911

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0105881A Expired - Fee Related FR2824423B1 (fr) 2001-05-02 2001-05-02 Procede de fabrication d'un composant tel qu'une capacite dans un circuit integre et composant de circuit integre

Country Status (2)

Country Link
US (1) US7008842B2 (fr)
FR (1) FR2824423B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006302987A (ja) * 2005-04-18 2006-11-02 Nec Electronics Corp 半導体装置およびその製造方法
CN105071317B (zh) * 2015-07-21 2017-07-18 江苏省电力公司常州供电公司 变电站电线电缆装配式铺设装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1079478A (ja) * 1996-09-04 1998-03-24 Hitachi Ltd ダイナミックｒａｍ装置及びその製造方法
TW410402B (en) * 1998-02-06 2000-11-01 Sony Corp Dielectric capacitor and method of manufacturing same, and dielectric memeory using same
US6057571A (en) * 1998-03-31 2000-05-02 Lsi Logic Corporation High aspect ratio, metal-to-metal, linear capacitor for an integrated circuit
US6165864A (en) * 1998-07-28 2000-12-26 Siemens Aktiengesellschaft Tapered electrode for stacked capacitors
US6281535B1 (en) * 1999-01-22 2001-08-28 Agilent Technologies, Inc. Three-dimensional ferroelectric capacitor structure for nonvolatile random access memory cell
FR2800199B1 (fr) * 1999-10-21 2002-03-01 St Microelectronics Sa Fabrication de memoire dram
US6251726B1 (en) * 2000-01-21 2001-06-26 Taiwan Semiconductor Manufacturing Company Method for making an enlarged DRAM capacitor using an additional polysilicon plug as a center pillar

Also Published As

Publication number Publication date
US7008842B2 (en) 2006-03-07
FR2824423A1 (fr) 2002-11-08
US20020162677A1 (en) 2002-11-07

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090119