FR2878076B1 - Amincissement d'une plaquette semiconductrice - Google Patents

Amincissement d'une plaquette semiconductrice

Info

Publication number
FR2878076B1
FR2878076B1 FR0452661A FR0452661A FR2878076B1 FR 2878076 B1 FR2878076 B1 FR 2878076B1 FR 0452661 A FR0452661 A FR 0452661A FR 0452661 A FR0452661 A FR 0452661A FR 2878076 B1 FR2878076 B1 FR 2878076B1
Authority
FR
France
Prior art keywords
slimming
semiconductor wafer
wafer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0452661A
Other languages
English (en)
Other versions
FR2878076A1 (fr
Inventor
Caroline Hernandez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0452661A priority Critical patent/FR2878076B1/fr
Priority to JP2007540697A priority patent/JP2008521214A/ja
Priority to EP05819228A priority patent/EP1815509A2/fr
Priority to PCT/FR2005/050959 priority patent/WO2006054024A2/fr
Publication of FR2878076A1 publication Critical patent/FR2878076A1/fr
Application granted granted Critical
Publication of FR2878076B1 publication Critical patent/FR2878076B1/fr
Priority to US11/748,995 priority patent/US20070218649A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/136—Singulating, e.g. dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
FR0452661A 2004-11-17 2004-11-17 Amincissement d'une plaquette semiconductrice Expired - Fee Related FR2878076B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0452661A FR2878076B1 (fr) 2004-11-17 2004-11-17 Amincissement d'une plaquette semiconductrice
JP2007540697A JP2008521214A (ja) 2004-11-17 2005-11-17 半導体ウエハの薄型化
EP05819228A EP1815509A2 (fr) 2004-11-17 2005-11-17 Amincissement d'une plaquette semiconductrice
PCT/FR2005/050959 WO2006054024A2 (fr) 2004-11-17 2005-11-17 Amincissement d'une plaquette semiconductrice
US11/748,995 US20070218649A1 (en) 2004-11-17 2007-05-15 Semiconductor wafer thinning

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0452661A FR2878076B1 (fr) 2004-11-17 2004-11-17 Amincissement d'une plaquette semiconductrice

Publications (2)

Publication Number Publication Date
FR2878076A1 FR2878076A1 (fr) 2006-05-19
FR2878076B1 true FR2878076B1 (fr) 2007-02-23

Family

ID=34952715

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0452661A Expired - Fee Related FR2878076B1 (fr) 2004-11-17 2004-11-17 Amincissement d'une plaquette semiconductrice

Country Status (5)

Country Link
US (1) US20070218649A1 (fr)
EP (1) EP1815509A2 (fr)
JP (1) JP2008521214A (fr)
FR (1) FR2878076B1 (fr)
WO (1) WO2006054024A2 (fr)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2894990B1 (fr) 2005-12-21 2008-02-22 Soitec Silicon On Insulator Procede de fabrication de substrats, notamment pour l'optique,l'electronique ou l'optoelectronique et substrat obtenu selon ledit procede
KR101278460B1 (ko) * 2005-03-01 2013-07-02 다우 코닝 코포레이션 반도체 가공을 위한 임시 웨이퍼 접착방법
US20090078310A1 (en) * 2007-09-24 2009-03-26 Emcore Corporation Heterojunction Subcells In Inverted Metamorphic Multijunction Solar Cells
US20100229913A1 (en) * 2009-01-29 2010-09-16 Emcore Solar Power, Inc. Contact Layout and String Interconnection of Inverted Metamorphic Multijunction Solar Cells
US20100229926A1 (en) 2009-03-10 2010-09-16 Emcore Solar Power, Inc. Four Junction Inverted Metamorphic Multijunction Solar Cell with a Single Metamorphic Layer
US9634172B1 (en) 2007-09-24 2017-04-25 Solaero Technologies Corp. Inverted metamorphic multijunction solar cell with multiple metamorphic layers
US20100186804A1 (en) * 2009-01-29 2010-07-29 Emcore Solar Power, Inc. String Interconnection of Inverted Metamorphic Multijunction Solar Cells on Flexible Perforated Carriers
US20090078309A1 (en) * 2007-09-24 2009-03-26 Emcore Corporation Barrier Layers In Inverted Metamorphic Multijunction Solar Cells
US10381501B2 (en) 2006-06-02 2019-08-13 Solaero Technologies Corp. Inverted metamorphic multijunction solar cell with multiple metamorphic layers
US20090078308A1 (en) * 2007-09-24 2009-03-26 Emcore Corporation Thin Inverted Metamorphic Multijunction Solar Cells with Rigid Support
US9117966B2 (en) 2007-09-24 2015-08-25 Solaero Technologies Corp. Inverted metamorphic multijunction solar cell with two metamorphic layers and homojunction top cell
US10170656B2 (en) 2009-03-10 2019-01-01 Solaero Technologies Corp. Inverted metamorphic multijunction solar cell with a single metamorphic layer
US20100122724A1 (en) 2008-11-14 2010-05-20 Emcore Solar Power, Inc. Four Junction Inverted Metamorphic Multijunction Solar Cell with Two Metamorphic Layers
US20100047959A1 (en) * 2006-08-07 2010-02-25 Emcore Solar Power, Inc. Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells
US20100203730A1 (en) * 2009-02-09 2010-08-12 Emcore Solar Power, Inc. Epitaxial Lift Off in Inverted Metamorphic Multijunction Solar Cells
US20110041898A1 (en) * 2009-08-19 2011-02-24 Emcore Solar Power, Inc. Back Metal Layers in Inverted Metamorphic Multijunction Solar Cells
US20100093127A1 (en) * 2006-12-27 2010-04-15 Emcore Solar Power, Inc. Inverted Metamorphic Multijunction Solar Cell Mounted on Metallized Flexible Film
US20100233838A1 (en) * 2009-03-10 2010-09-16 Emcore Solar Power, Inc. Mounting of Solar Cells on a Flexible Substrate
US10381505B2 (en) 2007-09-24 2019-08-13 Solaero Technologies Corp. Inverted metamorphic multijunction solar cells including metamorphic layers
US8895342B2 (en) 2007-09-24 2014-11-25 Emcore Solar Power, Inc. Heterojunction subcells in inverted metamorphic multijunction solar cells
US20090155952A1 (en) 2007-12-13 2009-06-18 Emcore Corporation Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells
US20100012175A1 (en) 2008-07-16 2010-01-21 Emcore Solar Power, Inc. Ohmic n-contact formed at low temperature in inverted metamorphic multijunction solar cells
US20090272430A1 (en) * 2008-04-30 2009-11-05 Emcore Solar Power, Inc. Refractive Index Matching in Inverted Metamorphic Multijunction Solar Cells
US20090272438A1 (en) * 2008-05-05 2009-11-05 Emcore Corporation Strain Balanced Multiple Quantum Well Subcell In Inverted Metamorphic Multijunction Solar Cell
US20090288703A1 (en) * 2008-05-20 2009-11-26 Emcore Corporation Wide Band Gap Window Layers In Inverted Metamorphic Multijunction Solar Cells
US20100012174A1 (en) * 2008-07-16 2010-01-21 Emcore Corporation High band gap contact layer in inverted metamorphic multijunction solar cells
US9287438B1 (en) 2008-07-16 2016-03-15 Solaero Technologies Corp. Method for forming ohmic N-contacts at low temperature in inverted metamorphic multijunction solar cells with contaminant isolation
US8263853B2 (en) 2008-08-07 2012-09-11 Emcore Solar Power, Inc. Wafer level interconnection of inverted metamorphic multijunction solar cells
US7741146B2 (en) 2008-08-12 2010-06-22 Emcore Solar Power, Inc. Demounting of inverted metamorphic multijunction solar cells
US8236600B2 (en) 2008-11-10 2012-08-07 Emcore Solar Power, Inc. Joining method for preparing an inverted metamorphic multijunction solar cell
US20100122764A1 (en) * 2008-11-14 2010-05-20 Emcore Solar Power, Inc. Surrogate Substrates for Inverted Metamorphic Multijunction Solar Cells
US9018521B1 (en) 2008-12-17 2015-04-28 Solaero Technologies Corp. Inverted metamorphic multijunction solar cell with DBR layer adjacent to the top subcell
US7785989B2 (en) 2008-12-17 2010-08-31 Emcore Solar Power, Inc. Growth substrates for inverted metamorphic multijunction solar cells
US20100147366A1 (en) * 2008-12-17 2010-06-17 Emcore Solar Power, Inc. Inverted Metamorphic Multijunction Solar Cells with Distributed Bragg Reflector
US10541349B1 (en) 2008-12-17 2020-01-21 Solaero Technologies Corp. Methods of forming inverted multijunction solar cells with distributed Bragg reflector
US7960201B2 (en) 2009-01-29 2011-06-14 Emcore Solar Power, Inc. String interconnection and fabrication of inverted metamorphic multijunction solar cells
US8778199B2 (en) 2009-02-09 2014-07-15 Emoore Solar Power, Inc. Epitaxial lift off in inverted metamorphic multijunction solar cells
US20100206365A1 (en) * 2009-02-19 2010-08-19 Emcore Solar Power, Inc. Inverted Metamorphic Multijunction Solar Cells on Low Density Carriers
US20100229933A1 (en) * 2009-03-10 2010-09-16 Emcore Solar Power, Inc. Inverted Metamorphic Multijunction Solar Cells with a Supporting Coating
US9018519B1 (en) 2009-03-10 2015-04-28 Solaero Technologies Corp. Inverted metamorphic multijunction solar cells having a permanent supporting substrate
US20100282288A1 (en) * 2009-05-06 2010-11-11 Emcore Solar Power, Inc. Solar Cell Interconnection on a Flexible Substrate
US8263856B2 (en) 2009-08-07 2012-09-11 Emcore Solar Power, Inc. Inverted metamorphic multijunction solar cells with back contacts
CN102082070B (zh) * 2009-11-27 2012-07-11 北大方正集团有限公司 一种在晶片减薄过程中保护金属层的方法
US8187907B1 (en) 2010-05-07 2012-05-29 Emcore Solar Power, Inc. Solder structures for fabrication of inverted metamorphic multijunction solar cells
US9263314B2 (en) 2010-08-06 2016-02-16 Brewer Science Inc. Multiple bonding layers for thin-wafer handling
CN102486992A (zh) * 2010-12-01 2012-06-06 比亚迪股份有限公司 一种半导体器件的制造方法
US8790996B2 (en) 2012-07-16 2014-07-29 Invensas Corporation Method of processing a device substrate
US9515217B2 (en) 2012-11-05 2016-12-06 Solexel, Inc. Monolithically isled back contact back junction solar cells
JP2016500931A (ja) * 2012-11-05 2016-01-14 ソレクセル、インコーポレイテッド 一体アイル型太陽光発電セル及びモジュールのためのシステム及び方法
US10153388B1 (en) 2013-03-15 2018-12-11 Solaero Technologies Corp. Emissivity coating for space solar cell arrays
US10361330B2 (en) 2015-10-19 2019-07-23 Solaero Technologies Corp. Multijunction solar cell assemblies for space applications
US9985161B2 (en) 2016-08-26 2018-05-29 Solaero Technologies Corp. Multijunction metamorphic solar cell for space applications
US9935209B2 (en) 2016-01-28 2018-04-03 Solaero Technologies Corp. Multijunction metamorphic solar cell for space applications
US10270000B2 (en) 2015-10-19 2019-04-23 Solaero Technologies Corp. Multijunction metamorphic solar cell assembly for space applications
US10403778B2 (en) 2015-10-19 2019-09-03 Solaero Technologies Corp. Multijunction solar cell assembly for space applications
US10256359B2 (en) 2015-10-19 2019-04-09 Solaero Technologies Corp. Lattice matched multijunction solar cell assemblies for space applications
US10263134B1 (en) 2016-05-25 2019-04-16 Solaero Technologies Corp. Multijunction solar cells having an indirect high band gap semiconductor emitter layer in the upper solar subcell
US12249667B2 (en) 2017-08-18 2025-03-11 Solaero Technologies Corp. Space vehicles including multijunction metamorphic solar cells
US10636926B1 (en) 2016-12-12 2020-04-28 Solaero Technologies Corp. Distributed BRAGG reflector structures in multijunction solar cells
US20190181289A1 (en) 2017-12-11 2019-06-13 Solaero Technologies Corp. Multijunction solar cells
CN112133666B (zh) * 2020-09-28 2024-09-13 北京国联万众半导体科技有限公司 毫米波芯片制作方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2684801B1 (fr) * 1991-12-06 1997-01-24 Picogiga Sa Procede de realisation de composants semiconducteurs, notamment sur gaas ou inp, avec recuperation du substrat par voie chimique.
US6013534A (en) * 1997-07-25 2000-01-11 The United States Of America As Represented By The National Security Agency Method of thinning integrated circuits received in die form
AU3144899A (en) * 1998-03-14 1999-10-11 Michael Stromberg Method and device for treating wafers presenting components during thinning of the wafer and separation of the components
JP3575373B2 (ja) * 1999-04-19 2004-10-13 株式会社村田製作所 外力検知センサの製造方法
DE19921230B4 (de) * 1999-05-07 2009-04-02 Giesecke & Devrient Gmbh Verfahren zum Handhaben von gedünnten Chips zum Einbringen in Chipkarten
DE19962763C2 (de) * 1999-07-01 2001-07-26 Fraunhofer Ges Forschung Verfahren zum Vereinzeln eines Wafers
US6420266B1 (en) * 1999-11-02 2002-07-16 Alien Technology Corporation Methods for creating elements of predetermined shape and apparatuses using these elements
FR2837981B1 (fr) * 2002-03-28 2005-01-07 Commissariat Energie Atomique Procede de manipulation de couches semiconductrices pour leur amincissement
US6869894B2 (en) * 2002-12-20 2005-03-22 General Chemical Corporation Spin-on adhesive for temporary wafer coating and mounting to support wafer thinning and backside processing
TWI299888B (en) * 2006-05-03 2008-08-11 Touch Micro System Tech Method of fabricating micro connectors

Also Published As

Publication number Publication date
FR2878076A1 (fr) 2006-05-19
EP1815509A2 (fr) 2007-08-08
WO2006054024A2 (fr) 2006-05-26
US20070218649A1 (en) 2007-09-20
JP2008521214A (ja) 2008-06-19
WO2006054024A3 (fr) 2007-02-01

Similar Documents

Publication Publication Date Title
FR2878076B1 (fr) Amincissement d'une plaquette semiconductrice
DE60317905D1 (de) Halbleiterbauelement
DE60331799D1 (de) Halbleitervorrichtung
DE10347856B8 (de) Halbleiterdotierung
DE60238361D1 (de) Halbleitersubstratschablone
DE602004005760D1 (de) Halbleitervorrichtung
DE60332500D1 (de) Halbleitervorrichtung
DE602005025951D1 (de) Integrierter Halbleiterschaltkreis
DE602004028430D1 (de) Halbleiter
EP1709688A4 (fr) Dispositif semi-conducteur
DE60213889D1 (de) Halbleiteranordnung
DE60328903D1 (de) Silikonharze
DE60227475D1 (de) Halbleiterbauelement
DE50213828D1 (de) Lichtsensitives Halbleiterbauelement
DE602004031698D1 (de) Integrierte Halbleiterschaltung
DE10238843B8 (de) Halbleiterbauelement
FR2854496B1 (fr) Boitier semi-conducteur
DE60211244D1 (de) Halbleiterbauelement
DE602005005430D1 (de) Integrierte Halbleiterschaltungsanordnung
DE60335147D1 (de) Integriertes halbleiterbauelement
EP1903608A4 (fr) Element d' imagerie a semi-conducteur
ITTO20040595A1 (it) Dispositivo a semiconduttore
FI20045387L (fi) Puolijohdeheterorakenne
DE60314962D1 (de) Halbleiterschaltkreis
DE60225790D1 (de) Halbleiterbauelement

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20070731