FR2891663B1 - Procede de fabrication d'un dispositif a semi-conducteur. - Google Patents

Procede de fabrication d'un dispositif a semi-conducteur.

Info

Publication number
FR2891663B1
FR2891663B1 FR0608628A FR0608628A FR2891663B1 FR 2891663 B1 FR2891663 B1 FR 2891663B1 FR 0608628 A FR0608628 A FR 0608628A FR 0608628 A FR0608628 A FR 0608628A FR 2891663 B1 FR2891663 B1 FR 2891663B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0608628A
Other languages
English (en)
Other versions
FR2891663A1 (fr
Inventor
Robert Beach
Paul Bridger
Michael A Briere
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of FR2891663A1 publication Critical patent/FR2891663A1/fr
Application granted granted Critical
Publication of FR2891663B1 publication Critical patent/FR2891663B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H10P14/3252—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
FR0608628A 2005-09-30 2006-10-02 Procede de fabrication d'un dispositif a semi-conducteur. Expired - Fee Related FR2891663B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US72251005P 2005-09-30 2005-09-30
US11/534,855 US8614129B2 (en) 2005-09-30 2006-09-25 Method for fabricating a semiconductor device

Publications (2)

Publication Number Publication Date
FR2891663A1 FR2891663A1 (fr) 2007-04-06
FR2891663B1 true FR2891663B1 (fr) 2010-11-26

Family

ID=37882467

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0608628A Expired - Fee Related FR2891663B1 (fr) 2005-09-30 2006-10-02 Procede de fabrication d'un dispositif a semi-conducteur.

Country Status (3)

Country Link
US (4) US8614129B2 (fr)
JP (1) JP2007129203A (fr)
FR (1) FR2891663B1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8614129B2 (en) * 2005-09-30 2013-12-24 International Rectifier Corporation Method for fabricating a semiconductor device
WO2009063288A1 (fr) * 2007-11-15 2009-05-22 S.O.I.Tec Silicon On Insulator Technologies Structure de semi-conducteur ayant une couche protectrice
US8981380B2 (en) * 2010-03-01 2015-03-17 International Rectifier Corporation Monolithic integration of silicon and group III-V devices
US9219058B2 (en) * 2010-03-01 2015-12-22 Infineon Technologies Americas Corp. Efficient high voltage switching circuits and monolithic integration of same
US20120103419A1 (en) * 2010-10-27 2012-05-03 The Regents Of The University Of California Group-iii nitride solar cells grown on high quality group-iii nitride crystals mounted on foreign material
EP3320566A4 (fr) * 2015-07-10 2019-02-27 The Regents of The University of California Procédé de croissance hybride pour dispositifs de jonction à effet tunnel à base de nitrure du groupe iii

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US6218280B1 (en) 1998-06-18 2001-04-17 University Of Florida Method and apparatus for producing group-III nitrides
US6566256B1 (en) 1999-04-16 2003-05-20 Gbl Technologies, Inc. Dual process semiconductor heterostructures and methods
JP4034015B2 (ja) * 1999-09-01 2008-01-16 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
US6673149B1 (en) 2000-09-06 2004-01-06 Matsushita Electric Industrial Co., Ltd Production of low defect, crack-free epitaxial films on a thermally and/or lattice mismatched substrate
US7053413B2 (en) * 2000-10-23 2006-05-30 General Electric Company Homoepitaxial gallium-nitride-based light emitting device and method for producing
US6649287B2 (en) 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
US6630692B2 (en) * 2001-05-29 2003-10-07 Lumileds Lighting U.S., Llc III-Nitride light emitting devices with low driving voltage
JP3946969B2 (ja) 2001-05-31 2007-07-18 日本碍子株式会社 電界効果トランジスタ、及びヘテロ接合型バイポーラトランジスタ
US6831293B2 (en) * 2002-03-19 2004-12-14 Showa Denko Kabushiki Kaisha P-n junction-type compound semiconductor light-emitting device, production method thereof, lamp and light source
JP4375972B2 (ja) 2003-01-28 2009-12-02 シャープ株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体装置の製造方法
US8614129B2 (en) * 2005-09-30 2013-12-24 International Rectifier Corporation Method for fabricating a semiconductor device

Also Published As

Publication number Publication date
US8865575B2 (en) 2014-10-21
FR2891663A1 (fr) 2007-04-06
US20140106548A1 (en) 2014-04-17
US9117671B2 (en) 2015-08-25
JP2007129203A (ja) 2007-05-24
US20070077714A1 (en) 2007-04-05
US20150037965A1 (en) 2015-02-05
US8614129B2 (en) 2013-12-24
US20150357182A1 (en) 2015-12-10

Similar Documents

Publication Publication Date Title
FR2872342B1 (fr) Procede de fabrication d'un dispositif semiconducteur
EP1935027A4 (fr) Dispositif a semi-conducteurs et son procede de fabrication
EP2259293A4 (fr) Procede de fabrication d'un dispositif a semi-conducteur
EP1790017A4 (fr) Dispositif electroluminescent a semi-conducteur nitrure et procede de fabrication associe
EP1861134A4 (fr) Procede de fabrication de dispositif de protection d'aiguille
EP1966740A4 (fr) Dispositif a semi-conducteurs et son procede de fabrication
EP1803166A4 (fr) Dispositif photoemetteur a semi-conducteur au nitrure et procede de fabrication correspondant
EP1988567A4 (fr) Procede de fabrication de dispositif semi-conducteur et procede visant a reduire la microrugosite de surface d'un semi-conducteur
FR2858714B1 (fr) Procede de fabrication d'un dispositif a semi-conducteur
FR2892196B1 (fr) Procede de fabrication d'un biocapteur a detection integree
EP1721344A4 (fr) Procede de fabrication d'un dispositif a superjonction
EP1686629A4 (fr) Dispositif a semi-conducteur et son procede de fabrication
EP1612861A4 (fr) Dispositif a semi-conducteurs et son procede de fabrication
EP1636858A4 (fr) Dispositif electroluminescent a semi-conducteur de nitrure et procede de fabrication correspondant
EP2133909A4 (fr) Dispositif a semi-conducteur et son procede de fabrication
EP1865381A4 (fr) Dispositif d'exposition et son procede de fabrication et procede de fabrication de microdispositif
EP1929545A4 (fr) Dispositif electroluminescent a semi-conducteur et son procede de fabrication
EP1887624A4 (fr) Dispositif semi-conducteur et son procede de fabrication
EP2242095A4 (fr) Dispositif a semi-conducteur et son procede de fabrication
EP1725496A4 (fr) Procede de fabrication d`un dispositif semi-conducteur
EP2146376A4 (fr) Dispositif d'imagerie semi-conducteur, son procédé de fabrication et dispositif d'imagerie
EP1817796A4 (fr) Dispositif a semiconducteur et son procede de fabrication
EP1922749A4 (fr) Procede de fabrication d'un dispositif semi-conducteur
EP1589585A4 (fr) Dispositif a semiconducteur et son procede de fabrication
EP1810352A4 (fr) Dispositif electroluminescent semiconducteur de nitrure et procede de fabrication correspondant

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 10

PLFP Fee payment

Year of fee payment: 11

PLFP Fee payment

Year of fee payment: 12

PLFP Fee payment

Year of fee payment: 13

CA Change of address

Effective date: 20181022

CD Change of name or company name

Owner name: INFINEON TECHNOLOGIES AMERICAS CORP., US

Effective date: 20181022

PLFP Fee payment

Year of fee payment: 14

PLFP Fee payment

Year of fee payment: 15

PLFP Fee payment

Year of fee payment: 16

PLFP Fee payment

Year of fee payment: 17

ST Notification of lapse

Effective date: 20240605