FR2897467B1 - Condensateur mim - Google Patents

Condensateur mim

Info

Publication number
FR2897467B1
FR2897467B1 FR0650540A FR0650540A FR2897467B1 FR 2897467 B1 FR2897467 B1 FR 2897467B1 FR 0650540 A FR0650540 A FR 0650540A FR 0650540 A FR0650540 A FR 0650540A FR 2897467 B1 FR2897467 B1 FR 2897467B1
Authority
FR
France
Prior art keywords
mim capacitor
mim
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0650540A
Other languages
English (en)
Other versions
FR2897467A1 (fr
Inventor
Joaquim Torres
Sonarith Chhun
Laurent Georges Gosset
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR0650540A priority Critical patent/FR2897467B1/fr
Priority to US11/706,059 priority patent/US7630191B2/en
Publication of FR2897467A1 publication Critical patent/FR2897467A1/fr
Application granted granted Critical
Publication of FR2897467B1 publication Critical patent/FR2897467B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/085—Vapour deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/712—Electrodes having non-planar surfaces, e.g. formed by texturisation being rough surfaces, e.g. using hemispherical grains

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR0650540A 2006-02-15 2006-02-15 Condensateur mim Expired - Fee Related FR2897467B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0650540A FR2897467B1 (fr) 2006-02-15 2006-02-15 Condensateur mim
US11/706,059 US7630191B2 (en) 2006-02-15 2007-02-13 MIM capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0650540A FR2897467B1 (fr) 2006-02-15 2006-02-15 Condensateur mim

Publications (2)

Publication Number Publication Date
FR2897467A1 FR2897467A1 (fr) 2007-08-17
FR2897467B1 true FR2897467B1 (fr) 2009-04-03

Family

ID=37103254

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0650540A Expired - Fee Related FR2897467B1 (fr) 2006-02-15 2006-02-15 Condensateur mim

Country Status (2)

Country Link
US (1) US7630191B2 (fr)
FR (1) FR2897467B1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7611958B2 (en) * 2007-12-05 2009-11-03 Infineon Technologies Ag Method of making a semiconductor element
US20100123993A1 (en) * 2008-02-13 2010-05-20 Herzel Laor Atomic layer deposition process for manufacture of battery electrodes, capacitors, resistors, and catalyzers
WO2010088684A2 (fr) * 2009-02-02 2010-08-05 Space Charge, LLC Condensateur utilisant des extensions à base de carbone
EP2396817A4 (fr) * 2009-02-12 2014-08-20 Laor Consulting Llc Condensateur électrique fritté et à nanopores, condensateur électrochimique et batterie et leur procédé de fabrication
US8236645B1 (en) * 2011-02-07 2012-08-07 GlobalFoundries, Inc. Integrated circuits having place-efficient capacitors and methods for fabricating the same
KR101887793B1 (ko) * 2014-02-07 2018-08-10 가부시키가이샤 무라타 세이사쿠쇼 콘덴서
JP7063019B2 (ja) * 2018-03-09 2022-05-09 Tdk株式会社 薄膜コンデンサの製造方法及び薄膜コンデンサ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2262186A (en) * 1991-12-04 1993-06-09 Philips Electronic Associated A capacitive structure for a semiconductor device
US6346741B1 (en) * 1997-11-20 2002-02-12 Advanced Technology Materials, Inc. Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same
US5976928A (en) * 1997-11-20 1999-11-02 Advanced Technology Materials, Inc. Chemical mechanical polishing of FeRAM capacitors
US6187624B1 (en) * 1999-06-04 2001-02-13 Taiwan Semiconductor Manufacturing Company Method for making closely spaced capacitors with reduced parasitic capacitance on a dynamic random access memory (DRAM) device
KR100331554B1 (ko) * 1999-09-27 2002-04-06 윤종용 인접된 커패시터 사이의 크로스토크가 억제된 반도체 소자의 커패시터 어레이 및 그 제조방법
US6548348B1 (en) * 2001-06-18 2003-04-15 Taiwan Semiconductor Manufacturing Company Method of forming a storage node contact hole in a porous insulator layer
US6825130B2 (en) * 2002-12-12 2004-11-30 Asm Japan K.K. CVD of porous dielectric materials

Also Published As

Publication number Publication date
US20070200197A1 (en) 2007-08-30
FR2897467A1 (fr) 2007-08-17
US7630191B2 (en) 2009-12-08

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20121031