FR2913145B1 - Assemblage de deux parties de circuit electronique integre - Google Patents

Assemblage de deux parties de circuit electronique integre

Info

Publication number
FR2913145B1
FR2913145B1 FR0701269A FR0701269A FR2913145B1 FR 2913145 B1 FR2913145 B1 FR 2913145B1 FR 0701269 A FR0701269 A FR 0701269A FR 0701269 A FR0701269 A FR 0701269A FR 2913145 B1 FR2913145 B1 FR 2913145B1
Authority
FR
France
Prior art keywords
assembly
parts
electronic circuit
integrated electronic
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0701269A
Other languages
English (en)
Other versions
FR2913145A1 (fr
Inventor
Philippe Coronel
Perceval Coudrain
Pascale Mazoyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR0701269A priority Critical patent/FR2913145B1/fr
Priority to US12/035,297 priority patent/US8186568B2/en
Publication of FR2913145A1 publication Critical patent/FR2913145A1/fr
Application granted granted Critical
Publication of FR2913145B1 publication Critical patent/FR2913145B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/701—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding
    • H10W80/721—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding having structure or size changed during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01951—Changing the shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/011—Manufacture or treatment of pads or other interconnections to be direct bonded
    • H10W80/031—Changing or setting shapes of the pads
    • H10W80/035—Changing or setting shapes of the pads by heating, e.g. melting or causing diffusion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/312—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of electrically conductive pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/327—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/297—Configurations of stacked chips characterised by the through-semiconductor vias [TSVs] in the stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49147—Assembling terminal to base
    • Y10T29/49149—Assembling terminal to base by metal fusion bonding
FR0701269A 2007-02-22 2007-02-22 Assemblage de deux parties de circuit electronique integre Expired - Fee Related FR2913145B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0701269A FR2913145B1 (fr) 2007-02-22 2007-02-22 Assemblage de deux parties de circuit electronique integre
US12/035,297 US8186568B2 (en) 2007-02-22 2008-02-21 Assembly of two parts of an integrated electronic circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0701269A FR2913145B1 (fr) 2007-02-22 2007-02-22 Assemblage de deux parties de circuit electronique integre

Publications (2)

Publication Number Publication Date
FR2913145A1 FR2913145A1 (fr) 2008-08-29
FR2913145B1 true FR2913145B1 (fr) 2009-05-15

Family

ID=38611025

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0701269A Expired - Fee Related FR2913145B1 (fr) 2007-02-22 2007-02-22 Assemblage de deux parties de circuit electronique integre

Country Status (2)

Country Link
US (1) US8186568B2 (fr)
FR (1) FR2913145B1 (fr)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011139862A2 (fr) * 2010-04-28 2011-11-10 Medtronic, Inc. Collage hermétique de plaquettes avec interconnexions électriques
US8513120B2 (en) 2010-04-29 2013-08-20 Medtronic, Inc. Gold-tin etch using combination of halogen plasma and wet etch
FR2964246A1 (fr) 2010-09-01 2012-03-02 St Microelectronics Sa Procede d'assemblage de deux parties d'un circuit
US8349116B1 (en) 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
US8809875B2 (en) 2011-11-18 2014-08-19 LuxVue Technology Corporation Micro light emitting diode
US8518204B2 (en) * 2011-11-18 2013-08-27 LuxVue Technology Corporation Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer
US8646505B2 (en) 2011-11-18 2014-02-11 LuxVue Technology Corporation Micro device transfer head
US8573469B2 (en) 2011-11-18 2013-11-05 LuxVue Technology Corporation Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer
US9773750B2 (en) 2012-02-09 2017-09-26 Apple Inc. Method of transferring and bonding an array of micro devices
US9548332B2 (en) 2012-04-27 2017-01-17 Apple Inc. Method of forming a micro LED device with self-aligned metallization stack
US9162880B2 (en) 2012-09-07 2015-10-20 LuxVue Technology Corporation Mass transfer tool
US8802538B1 (en) * 2013-03-15 2014-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for hybrid wafer bonding
WO2014201187A2 (fr) 2013-06-12 2014-12-18 Rohinni, Inc. Rétroéclairage de clavier au moyen de sources de génération de lumière réalisées par dépôt
US9296111B2 (en) 2013-07-22 2016-03-29 LuxVue Technology Corporation Micro pick up array alignment encoder
US9087764B2 (en) 2013-07-26 2015-07-21 LuxVue Technology Corporation Adhesive wafer bonding with controlled thickness variation
US9153548B2 (en) 2013-09-16 2015-10-06 Lux Vue Technology Corporation Adhesive wafer bonding with sacrificial spacers for controlled thickness variation
FR3011679B1 (fr) * 2013-10-03 2017-01-27 Commissariat Energie Atomique Procede ameliore d'assemblage par collage direct entre deux elements, chaque element comprenant des portions de metal et de materiaux dielectriques
US9367094B2 (en) 2013-12-17 2016-06-14 Apple Inc. Display module and system applications
US9768345B2 (en) 2013-12-20 2017-09-19 Apple Inc. LED with current injection confinement trench
US9450147B2 (en) 2013-12-27 2016-09-20 Apple Inc. LED with internally confined current injection area
US9583466B2 (en) 2013-12-27 2017-02-28 Apple Inc. Etch removal of current distribution layer for LED current confinement
US9542638B2 (en) 2014-02-18 2017-01-10 Apple Inc. RFID tag and micro chip integration design
US9583533B2 (en) 2014-03-13 2017-02-28 Apple Inc. LED device with embedded nanowire LEDs
US9522468B2 (en) 2014-05-08 2016-12-20 Apple Inc. Mass transfer tool manipulator assembly with remote center of compliance
US9318475B2 (en) 2014-05-15 2016-04-19 LuxVue Technology Corporation Flexible display and method of formation with sacrificial release layer
US9741286B2 (en) 2014-06-03 2017-08-22 Apple Inc. Interactive display panel with emitting and sensing diodes
US9624100B2 (en) 2014-06-12 2017-04-18 Apple Inc. Micro pick up array pivot mount with integrated strain sensing elements
US9425151B2 (en) 2014-06-17 2016-08-23 Apple Inc. Compliant electrostatic transfer head with spring support layer
US9570002B2 (en) 2014-06-17 2017-02-14 Apple Inc. Interactive display panel with IR diodes
US9828244B2 (en) 2014-09-30 2017-11-28 Apple Inc. Compliant electrostatic transfer head with defined cavity
US9705432B2 (en) 2014-09-30 2017-07-11 Apple Inc. Micro pick up array pivot mount design for strain amplification
US9478583B2 (en) 2014-12-08 2016-10-25 Apple Inc. Wearable display having an array of LEDs on a conformable silicon substrate
CN104979226B (zh) * 2015-06-24 2018-09-07 武汉新芯集成电路制造有限公司 一种铜的混合键合方法
EP3408728A4 (fr) 2016-01-15 2019-03-13 Rohinni, LLC Appareil et procédé de rétroéclairage à travers un couvercle sur l'appareil
JP6952629B2 (ja) 2018-03-20 2021-10-20 株式会社東芝 半導体装置
US11315871B2 (en) * 2019-06-13 2022-04-26 Nanya Technology Corporation Integrated circuit device with bonding structure and method of forming the same
CN115910809A (zh) * 2021-09-22 2023-04-04 中国科学院微电子研究所 一种芯片至晶圆直接混合键合方法和三维堆叠集成器件
CN115841954A (zh) * 2021-09-22 2023-03-24 中国科学院微电子研究所 一种三维堆叠集成器件及其直接混合键合工艺

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2032872B2 (de) * 1970-07-02 1975-03-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen weichlötfähiger Kontakte zum Einbau von Halbleiterbauelementen in Gehäuse
DE3230320C2 (de) * 1982-08-14 1985-05-30 Dornier System Gmbh, 7990 Friedrichshafen Lot zum Verbinden von Siliziumcarbidwerkstoffen
JPH0691125B2 (ja) * 1985-11-20 1994-11-14 古河電気工業株式会社 半導体装置
US4704785A (en) * 1986-08-01 1987-11-10 Texas Instruments Incorporated Process for making a buried conductor by fusing two wafers
US5028454A (en) * 1989-10-16 1991-07-02 Motorola Inc. Electroless plating of portions of semiconductor devices and the like
US5387555A (en) * 1992-09-03 1995-02-07 Harris Corporation Bonded wafer processing with metal silicidation
JP2984068B2 (ja) * 1991-01-31 1999-11-29 株式会社日立製作所 半導体装置の製造方法
DE59406156D1 (de) * 1993-02-11 1998-07-16 Siemens Ag Verfahren zur Herstellung einer dreidimensionalen Schaltungsanordnung
US5880010A (en) * 1994-07-12 1999-03-09 Sun Microsystems, Inc. Ultrathin electronics
US5985692A (en) * 1995-06-07 1999-11-16 Microunit Systems Engineering, Inc. Process for flip-chip bonding a semiconductor die having gold bump electrodes
TW336371B (en) * 1995-07-13 1998-07-11 Motorola Inc Method for forming bumps on a substrate the invention relates to a method for forming bumps on a substrate
US5704116A (en) * 1996-05-03 1998-01-06 Motorola, Inc. Method of holding a component using an anhydride fluxing agent
FR2749787B1 (fr) * 1996-06-12 1998-07-24 Commissariat Energie Atomique Procede d'assemblage a l'aide d'un joint epais de pieces en materiaux a base de sic par brasage refractaire et joint refractaire et epais ainsi obtenu
JP3663786B2 (ja) * 1996-10-14 2005-06-22 ヤマハ株式会社 半導体チップの実装方法と実装構造
US6097096A (en) * 1997-07-11 2000-08-01 Advanced Micro Devices Metal attachment method and structure for attaching substrates at low temperatures
JP3484414B2 (ja) * 1997-07-23 2004-01-06 インフィネオン テクノロジース アクチエンゲゼルシャフト チップ基板接合部を形成する装置および方法
US5975408A (en) * 1997-10-23 1999-11-02 Lucent Technologies Inc. Solder bonding of electrical components
US5952893A (en) * 1998-03-06 1999-09-14 International Business Machines Corporation Integrated circuit inductors for use with electronic oscillators
JP3532788B2 (ja) * 1999-04-13 2004-05-31 唯知 須賀 半導体装置及びその製造方法
WO2001052316A1 (fr) * 2000-01-14 2001-07-19 Toray Engineering Co., Ltd. Procede de montage de puce
JP3440057B2 (ja) * 2000-07-05 2003-08-25 唯知 須賀 半導体装置およびその製造方法
JP4609617B2 (ja) * 2000-08-01 2011-01-12 日本電気株式会社 半導体装置の実装方法及び実装構造体
US20020056742A1 (en) * 2000-11-10 2002-05-16 Rinne Glenn A. Methods and systems for attaching substrates to one another using solder structures having portions with different melting points
US6621168B2 (en) * 2000-12-28 2003-09-16 Intel Corporation Interconnected circuit board assembly and system
JP4656275B2 (ja) * 2001-01-15 2011-03-23 日本電気株式会社 半導体装置の製造方法
US6648213B1 (en) * 2001-03-05 2003-11-18 Saturn Electronics & Engineering, Inc. Manufacturing method for attaching components to a substrate
US6686664B2 (en) * 2001-04-30 2004-02-03 International Business Machines Corporation Structure to accommodate increase in volume expansion during solder reflow
US6550665B1 (en) * 2001-06-06 2003-04-22 Indigo Systems Corporation Method for electrically interconnecting large contact arrays using eutectic alloy bumping
US6649833B1 (en) * 2002-08-09 2003-11-18 International Business Machines Corporation Negative volume expansion lead-free electrical connection
FR2848339B1 (fr) * 2002-12-05 2005-08-26 St Microelectronics Sa Procede d'adhesion de deux elements, en particulier d'un circuit integre, par exemple une encapsulation d'un resonateur, et circuit integre correspondant
US7004375B2 (en) * 2003-05-23 2006-02-28 National Starch And Chemical Investment Holding Corporation Pre-applied fluxing underfill composition having pressure sensitive adhesive properties
US7367489B2 (en) * 2003-07-01 2008-05-06 Chippac, Inc. Method and apparatus for flip chip attachment by post collapse re-melt and re-solidification of bumps
US7213739B2 (en) * 2004-04-02 2007-05-08 Fry's Metals, Inc. Underfill fluxing curative
US7331500B2 (en) * 2004-06-25 2008-02-19 Intel Corporation Solder bumps formation using solder paste with shape retaining attribute
US7287685B2 (en) * 2004-09-20 2007-10-30 International Business Machines Corporation Structure and method to gain substantial reliability improvements in lead-free BGAs assembled with lead-bearing solders
JP4203666B2 (ja) * 2004-12-27 2009-01-07 パナソニック株式会社 電子部品実装方法および電子部品実装構造
KR100718169B1 (ko) * 2006-01-12 2007-05-15 한국과학기술원 니켈 표면 처리된 전자부품과 무전해 니켈 표면 처리된전자부품의 접합방법
US8322299B2 (en) * 2006-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Co., Ltd. Cluster processing apparatus for metallization processing in semiconductor manufacturing
US7833897B2 (en) * 2007-07-17 2010-11-16 International Business Machines Corporation Process for making interconnect solder Pb-free bumps free from organo-tin/tin deposits on the wafer surface

Also Published As

Publication number Publication date
US8186568B2 (en) 2012-05-29
FR2913145A1 (fr) 2008-08-29
US20080205027A1 (en) 2008-08-28

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Effective date: 20131031