FR2995136B1 - Pseudo-substrat avec efficacite amelioree d'utilisation d'un materiau monocristallin - Google Patents

Pseudo-substrat avec efficacite amelioree d'utilisation d'un materiau monocristallin

Info

Publication number
FR2995136B1
FR2995136B1 FR1258227A FR1258227A FR2995136B1 FR 2995136 B1 FR2995136 B1 FR 2995136B1 FR 1258227 A FR1258227 A FR 1258227A FR 1258227 A FR1258227 A FR 1258227A FR 2995136 B1 FR2995136 B1 FR 2995136B1
Authority
FR
France
Prior art keywords
pseudo
substrate
improved efficiency
monocrystalline material
monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1258227A
Other languages
English (en)
Other versions
FR2995136A1 (fr
Inventor
Oleg Kononchuk
Fabrice Letertre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1258227A priority Critical patent/FR2995136B1/fr
Priority to TW102131115A priority patent/TWI610373B/zh
Priority to DE112013004330.0T priority patent/DE112013004330T5/de
Priority to KR1020157006801A priority patent/KR102047864B1/ko
Priority to PCT/IB2013/001940 priority patent/WO2014037793A1/fr
Priority to US14/422,596 priority patent/US10910256B2/en
Priority to JP2015529138A priority patent/JP6319849B2/ja
Priority to CN201380045848.XA priority patent/CN104718599B/zh
Publication of FR2995136A1 publication Critical patent/FR2995136A1/fr
Application granted granted Critical
Publication of FR2995136B1 publication Critical patent/FR2995136B1/fr
Priority to US17/088,426 priority patent/US12112976B2/en
Priority to US18/901,953 priority patent/US20250022747A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
    • Y10T156/1062—Prior to assembly
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR1258227A 2012-09-04 2012-09-04 Pseudo-substrat avec efficacite amelioree d'utilisation d'un materiau monocristallin Active FR2995136B1 (fr)

Priority Applications (10)

Application Number Priority Date Filing Date Title
FR1258227A FR2995136B1 (fr) 2012-09-04 2012-09-04 Pseudo-substrat avec efficacite amelioree d'utilisation d'un materiau monocristallin
TW102131115A TWI610373B (zh) 2012-09-04 2013-08-29 以更佳效能應用單晶材料之類底材
KR1020157006801A KR102047864B1 (ko) 2012-09-04 2013-09-06 단결정 재료 사용의 개선된 효율을 갖는 유사 기판
PCT/IB2013/001940 WO2014037793A1 (fr) 2012-09-04 2013-09-06 Pseudo-substrat à efficacité d'utilisation de matériau monocristallin efficace
US14/422,596 US10910256B2 (en) 2012-09-04 2013-09-06 Pseudo-substrate with improved efficiency of usage of single crystal material
JP2015529138A JP6319849B2 (ja) 2012-09-04 2013-09-06 単結晶材料の利用効率を改善した擬似基板
DE112013004330.0T DE112013004330T5 (de) 2012-09-04 2013-09-06 Pseudosubstrat mit verbesserter Nutzungseffizienz eines Einkristallmaterials
CN201380045848.XA CN104718599B (zh) 2012-09-04 2013-09-06 具有改善的单晶材料使用效率的伪衬底
US17/088,426 US12112976B2 (en) 2012-09-04 2020-11-03 Pseudo-substrate with improved efficiency of usage of single crystal material
US18/901,953 US20250022747A1 (en) 2012-09-04 2024-09-30 Pseudo-substrate with improved efficiency of usage of single crystal material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1258227A FR2995136B1 (fr) 2012-09-04 2012-09-04 Pseudo-substrat avec efficacite amelioree d'utilisation d'un materiau monocristallin

Publications (2)

Publication Number Publication Date
FR2995136A1 FR2995136A1 (fr) 2014-03-07
FR2995136B1 true FR2995136B1 (fr) 2015-06-26

Family

ID=47429879

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1258227A Active FR2995136B1 (fr) 2012-09-04 2012-09-04 Pseudo-substrat avec efficacite amelioree d'utilisation d'un materiau monocristallin

Country Status (8)

Country Link
US (3) US10910256B2 (fr)
JP (1) JP6319849B2 (fr)
KR (1) KR102047864B1 (fr)
CN (1) CN104718599B (fr)
DE (1) DE112013004330T5 (fr)
FR (1) FR2995136B1 (fr)
TW (1) TWI610373B (fr)
WO (1) WO2014037793A1 (fr)

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CN104979185B (zh) * 2015-05-13 2018-01-30 北京通美晶体技术有限公司 一种超薄半导体晶片及其制备方法
CN105081893B (zh) * 2015-05-13 2018-11-06 北京通美晶体技术有限公司 一种超薄Ge单晶衬底材料及其制备方法
DE102015112648B4 (de) * 2015-07-31 2021-02-04 Infineon Technologies Ag Verfahren zum bilden einer waferstruktur, verfahren zum bilden eines halbleiterbauelements und einer waferstruktur
US9536838B1 (en) * 2015-08-10 2017-01-03 Infineon Technologies Ag Single crystal ingot, semiconductor wafer and method of manufacturing semiconductor wafers
FR3045678B1 (fr) 2015-12-22 2017-12-22 Soitec Silicon On Insulator Procede de fabrication d'une couche piezoelectrique monocristalline et dispositif microelectronique, photonique ou optique comprenant une telle couche
FR3045677B1 (fr) 2015-12-22 2019-07-19 Soitec Procede de fabrication d'une couche monocristalline, notamment piezoelectrique
FR3054930B1 (fr) * 2016-08-02 2018-07-13 Soitec Utilisation d'un champ electrique pour detacher une couche piezo-electrique a partir d'un substrat donneur
FR3076067B1 (fr) * 2017-12-21 2020-01-10 Universite De Franche-Comte Procede de fabrication de composite a couche mince ultra-plane
JP7308652B2 (ja) * 2019-04-26 2023-07-14 株式会社ディスコ デバイスチップの製造方法
SE1950611A1 (en) * 2019-05-23 2020-09-29 Ascatron Ab Crystal efficient SiC device wafer production
CN115424918A (zh) * 2022-08-10 2022-12-02 中晟鲲鹏光电半导体有限公司 一种碳化硅与氮化镓键合的超薄晶圆制作工艺
TWI903867B (zh) * 2024-11-15 2025-11-01 中國砂輪企業股份有限公司 複合基板及其製造方法

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Also Published As

Publication number Publication date
JP2015529978A (ja) 2015-10-08
US10910256B2 (en) 2021-02-02
TWI610373B (zh) 2018-01-01
US20250022747A1 (en) 2025-01-16
KR102047864B1 (ko) 2019-11-22
CN104718599A (zh) 2015-06-17
KR20160041840A (ko) 2016-04-18
US20210050248A1 (en) 2021-02-18
FR2995136A1 (fr) 2014-03-07
WO2014037793A1 (fr) 2014-03-13
US20150243549A1 (en) 2015-08-27
DE112013004330T5 (de) 2015-06-11
CN104718599B (zh) 2018-01-16
JP6319849B2 (ja) 2018-05-09
US12112976B2 (en) 2024-10-08
TW201411741A (zh) 2014-03-16

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