FR3020175B1 - Procede de transfert d'une couche utile - Google Patents

Procede de transfert d'une couche utile

Info

Publication number
FR3020175B1
FR3020175B1 FR1453400A FR1453400A FR3020175B1 FR 3020175 B1 FR3020175 B1 FR 3020175B1 FR 1453400 A FR1453400 A FR 1453400A FR 1453400 A FR1453400 A FR 1453400A FR 3020175 B1 FR3020175 B1 FR 3020175B1
Authority
FR
France
Prior art keywords
transferring
useful layer
useful
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1453400A
Other languages
English (en)
Other versions
FR3020175A1 (fr
Inventor
Didier Landru
Oleg Kononchuk
Mohammed Nadia Ben
Damien Massy
Frederic Mazen
Francois Rieutord
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
Original Assignee
Commissariat a lEnergie Atomique CEA
Soitec SA
Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Soitec SA, Commissariat à l'Énergie Atomique et Aux Énergies Alternatives filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1453400A priority Critical patent/FR3020175B1/fr
Priority to EP15162329.5A priority patent/EP2933828B1/fr
Priority to DK15162329.5T priority patent/DK2933828T3/en
Priority to JP2015076933A priority patent/JP6481202B2/ja
Priority to US14/686,229 priority patent/US9589830B2/en
Priority to CN201510177940.2A priority patent/CN105023876B/zh
Priority to TW104112125A priority patent/TWI648765B/zh
Priority to SG10201503005RA priority patent/SG10201503005RA/en
Priority to KR1020150054032A priority patent/KR102333997B1/ko
Publication of FR3020175A1 publication Critical patent/FR3020175A1/fr
Application granted granted Critical
Publication of FR3020175B1 publication Critical patent/FR3020175B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H10P54/50—Cutting or separating of wafers, substrates or parts of devices by scoring, breaking or cleaving
    • H10P54/52—Cutting or separating of wafers, substrates or parts of devices by scoring, breaking or cleaving by cleaving
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
FR1453400A 2014-04-16 2014-04-16 Procede de transfert d'une couche utile Expired - Fee Related FR3020175B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR1453400A FR3020175B1 (fr) 2014-04-16 2014-04-16 Procede de transfert d'une couche utile
EP15162329.5A EP2933828B1 (fr) 2014-04-16 2015-04-02 Procédé de transfert d'une couche utile
DK15162329.5T DK2933828T3 (en) 2014-04-16 2015-04-02 Method of transferring a usable layer
JP2015076933A JP6481202B2 (ja) 2014-04-16 2015-04-03 有用層を移転するための方法
US14/686,229 US9589830B2 (en) 2014-04-16 2015-04-14 Method for transferring a useful layer
CN201510177940.2A CN105023876B (zh) 2014-04-16 2015-04-15 转移有用层的方法
TW104112125A TWI648765B (zh) 2014-04-16 2015-04-15 用於轉移有用層之方法
SG10201503005RA SG10201503005RA (en) 2014-04-16 2015-04-16 Method For Transferring A Useful Layer
KR1020150054032A KR102333997B1 (ko) 2014-04-16 2015-04-16 유용층 이송방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1453400A FR3020175B1 (fr) 2014-04-16 2014-04-16 Procede de transfert d'une couche utile

Publications (2)

Publication Number Publication Date
FR3020175A1 FR3020175A1 (fr) 2015-10-23
FR3020175B1 true FR3020175B1 (fr) 2016-05-13

Family

ID=51726593

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1453400A Expired - Fee Related FR3020175B1 (fr) 2014-04-16 2014-04-16 Procede de transfert d'une couche utile

Country Status (9)

Country Link
US (1) US9589830B2 (fr)
EP (1) EP2933828B1 (fr)
JP (1) JP6481202B2 (fr)
KR (1) KR102333997B1 (fr)
CN (1) CN105023876B (fr)
DK (1) DK2933828T3 (fr)
FR (1) FR3020175B1 (fr)
SG (1) SG10201503005RA (fr)
TW (1) TWI648765B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11670540B2 (en) 2016-08-11 2023-06-06 Soitec Substrates including useful layers

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6563360B2 (ja) * 2016-04-05 2019-08-21 信越化学工業株式会社 酸化物単結晶薄膜を備えた複合ウェーハの製造方法
FR3061988B1 (fr) * 2017-01-13 2019-11-01 Soitec Procede de lissage de surface d'un substrat semiconducteur sur isolant
US10679908B2 (en) * 2017-01-23 2020-06-09 Globalwafers Co., Ltd. Cleave systems, mountable cleave monitoring systems, and methods for separating bonded wafer structures
FR3079658B1 (fr) * 2018-03-28 2021-12-17 Soitec Silicon On Insulator Procede de detection de la fracture d'un substrat fragilise par implantation d'especes atomiques
FR3093860B1 (fr) 2019-03-15 2021-03-05 Soitec Silicon On Insulator Procédé de transfert d’une couche utile sur un substrat support
FR3093858B1 (fr) 2019-03-15 2021-03-05 Soitec Silicon On Insulator Procédé de transfert d’une couche utile sur un substrat support
FR3093859B1 (fr) * 2019-03-15 2021-02-12 Soitec Silicon On Insulator Procédé de transfert d’une couche utile sur une substrat support
FR3094563A1 (fr) * 2019-03-29 2020-10-02 Soitec Procede de fabrication d’un substrat de type semi-conducteur sur isolant
US12213834B2 (en) * 2019-11-22 2025-02-04 Exo Imaging, Inc. Ultrasound transducer with acoustic absorber structure
FR3108440B1 (fr) 2020-03-23 2025-01-17 Soitec Silicon On Insulator Procédé de préparation d’une couche mince
FR3112240B1 (fr) * 2020-07-06 2022-06-03 Soitec Silicon On Insulator Structure semi-conductrice comprenant une interface de collage electriquement conductrice, et procede de fabrication associe

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100742790B1 (ko) * 2000-04-14 2007-07-25 에스. 오. 이. 떼끄 씰리꽁 오 냉쉴라또흐 떼끄놀로지 특히 반도체 재료(들)로 제조된 기판 또는 잉곳에서 적어도 하나의 박층을 절단하는 방법 및 장치
FR2809867B1 (fr) * 2000-05-30 2003-10-24 Commissariat Energie Atomique Substrat fragilise et procede de fabrication d'un tel substrat
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
JP4995626B2 (ja) * 2007-04-27 2012-08-08 信越化学工業株式会社 貼り合わせ基板の製造方法
JP5876646B2 (ja) * 2010-11-02 2016-03-02 キヤノン株式会社 電気機械変換装置
JP5704602B2 (ja) 2011-03-17 2015-04-22 リンテック株式会社 薄型半導体装置の製造方法および脆質部材用支持体

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11670540B2 (en) 2016-08-11 2023-06-06 Soitec Substrates including useful layers

Also Published As

Publication number Publication date
FR3020175A1 (fr) 2015-10-23
US20150303098A1 (en) 2015-10-22
KR20150119822A (ko) 2015-10-26
TWI648765B (zh) 2019-01-21
TW201611085A (zh) 2016-03-16
JP2015213161A (ja) 2015-11-26
US9589830B2 (en) 2017-03-07
DK2933828T3 (en) 2017-01-23
KR102333997B1 (ko) 2021-12-02
CN105023876B (zh) 2019-05-17
JP6481202B2 (ja) 2019-03-13
CN105023876A (zh) 2015-11-04
EP2933828A1 (fr) 2015-10-21
EP2933828B1 (fr) 2016-10-19
SG10201503005RA (en) 2015-11-27

Similar Documents

Publication Publication Date Title
EP3395704A4 (fr) Récipient double couche
SG10201506217SA (en) Etching method of multilayered film
DK3097255T3 (da) Time-delay coating for dissolvable wellbore isolation devices
EP3342385A4 (fr) Couche jetable de type culotte
EP3424476A4 (fr) Couche jetable
EP3194180C0 (fr) Couche de lentilles sécurisée
FR3032555B1 (fr) Procede de report d'une couche utile
SG10201506214XA (en) Etching method of multilayered film
PL3256907T3 (pl) Sposób teksturowania na odrębnych podłożach
SG10201503005RA (en) Method For Transferring A Useful Layer
FR3020345B1 (fr) Procede de controle d'un ecoulement de couche limite
EP3470546A4 (fr) Procédé de formation de film
SG10201503789YA (en) Method For Etching Etching Target Layer
PL3131957T3 (pl) Sposób impregnacji podłoży polimerowych
PL3221651T3 (pl) Sposób suszenia materiału geologicznego
PL3169844T3 (pl) Sposób zapobiegania tworzeniu się kamienia kotłowego
EP3124442A4 (fr) Procédé pour empêcher des larves au stade d'adhérence de nager ou de ramper
EP3056175A4 (fr) Couche jetable
IL246899B (en) Information communication system
FR3007576B1 (fr) Procede de transfert d'une couche de circuits.
PL3146044T3 (pl) Sposób immobilizacji lipazy
EP3420589A4 (fr) Lignes de couche de redistribution
EP3776643C0 (fr) Procede de transfert d'une couche
EP3406232A4 (fr) Couche jetable
IL245492B (en) Method of mechanical separation for a double layer transfer

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 9

PLFP Fee payment

Year of fee payment: 10

ST Notification of lapse

Effective date: 20241205