FR3085246B1 - Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique - Google Patents

Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique Download PDF

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Publication number
FR3085246B1
FR3085246B1 FR1857618A FR1857618A FR3085246B1 FR 3085246 B1 FR3085246 B1 FR 3085246B1 FR 1857618 A FR1857618 A FR 1857618A FR 1857618 A FR1857618 A FR 1857618A FR 3085246 B1 FR3085246 B1 FR 3085246B1
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France
Prior art keywords
signal
image sensor
global shutter
achievement
built
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Active
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FR1857618A
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English (en)
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FR3085246A1 (fr
Inventor
Pierre Malinge
Frederic Lalanne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
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STMicroelectronics Crolles 2 SAS
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Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1857618A priority Critical patent/FR3085246B1/fr
Priority to US16/547,369 priority patent/US11102429B2/en
Priority to CN201910778592.2A priority patent/CN110858880B/zh
Priority to CN201921370712.7U priority patent/CN211406121U/zh
Publication of FR3085246A1 publication Critical patent/FR3085246A1/fr
Application granted granted Critical
Publication of FR3085246B1 publication Critical patent/FR3085246B1/fr
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

Capteur d'images intégré (DIS) adapté à un mode de commande dit à obturation globale comportant une matrice de pixels dans laquelle chaque pixel (PX) comporte une première partie de circuit (P1) apte à intégrer et stocker à l'abri de la lumière des électrons issus d'une illumination (LX) de la matrice de façon à former un premier signal, une deuxième partie de circuit (P2) apte à intégrer les trous issus de ladite illumination (LX) de façon à former un deuxième signal et apte à stocker le deuxième signal à l'abri de la lumière, et une troisième partie de circuit (P3) apte à lire le premier signal et le deuxième signal, et apte à réaliser des opérations de combinaisons entre le premier signal et le deuxième signal afin de générer un signal combiné, l'ensemble des signaux combinés étant destiné à former une image.
FR1857618A 2018-08-23 2018-08-23 Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique Active FR3085246B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1857618A FR3085246B1 (fr) 2018-08-23 2018-08-23 Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique
US16/547,369 US11102429B2 (en) 2018-08-23 2019-08-21 Integrated global shutter image sensor
CN201910778592.2A CN110858880B (zh) 2018-08-23 2019-08-22 集成全局快门图像传感器
CN201921370712.7U CN211406121U (zh) 2018-08-23 2019-08-22 集成图像传感器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1857618A FR3085246B1 (fr) 2018-08-23 2018-08-23 Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique
FR1857618 2018-08-23

Publications (2)

Publication Number Publication Date
FR3085246A1 FR3085246A1 (fr) 2020-02-28
FR3085246B1 true FR3085246B1 (fr) 2020-09-18

Family

ID=65201139

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1857618A Active FR3085246B1 (fr) 2018-08-23 2018-08-23 Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique

Country Status (3)

Country Link
US (1) US11102429B2 (fr)
CN (2) CN211406121U (fr)
FR (1) FR3085246B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3085246B1 (fr) 2018-08-23 2020-09-18 St Microelectronics Crolles 2 Sas Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique
CN111601053B (zh) * 2020-05-20 2021-07-27 上海炬佑智能科技有限公司 一种图像传感器、全局快门控制方法及计算机存储介质

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6888214B2 (en) 2002-11-12 2005-05-03 Micron Technology, Inc. Isolation techniques for reducing dark current in CMOS image sensors
EP1563544A1 (fr) 2002-11-12 2005-08-17 Micron Technology, Inc. Grille mise a la terre et techniques d'isolation visant a reduire le courant d'obscurite dans des capteurs d'images cmos
EP1796373A1 (fr) 2005-12-12 2007-06-13 The Swatch Group Research and Development Ltd. Pocédé d'obtention d'une image à l'aide d'un capteur d'images à gamme dynamique etendue
JP2010171318A (ja) * 2009-01-26 2010-08-05 Fujifilm Corp 固体撮像素子、撮像装置、及び固体撮像素子の信号読み出し方法
JP4798254B2 (ja) * 2009-05-13 2011-10-19 株式会社デンソー 受光デバイス及びその制御方法
US9252185B2 (en) 2012-09-19 2016-02-02 Semiconductor Components Industries, Llc Back side illuminated image sensors with back side charge storage
JP2014216794A (ja) * 2013-04-24 2014-11-17 キヤノン株式会社 放射線撮像装置及び放射線検査装置
US9356061B2 (en) * 2013-08-05 2016-05-31 Apple Inc. Image sensor with buried light shield and vertical gate
US9484370B2 (en) 2014-10-27 2016-11-01 Omnivision Technologies, Inc. Isolated global shutter pixel storage structure
TWI608244B (zh) 2015-08-07 2017-12-11 佳能股份有限公司 光電轉換設備、測距裝置、及資訊處理系統
US9876047B2 (en) * 2015-12-15 2018-01-23 Canon Kabushiki Kaisha Photoelectric conversion apparatus and information processing apparatus
US9923016B2 (en) * 2015-12-29 2018-03-20 Stmicroelectronics (Crolles 2) Sas High-dynamic-range pixel
JP2019507954A (ja) 2016-03-11 2019-03-22 インヴィサージ テクノロジーズ インコーポレイテッド グローバル電子シャッタを提供する画像センサを含む、画像センサ
US10001406B2 (en) * 2016-06-07 2018-06-19 Semiconductor Components Industries, Llc Charge packet signal processing using pinned photodiode devices
WO2018018026A1 (fr) 2016-07-22 2018-01-25 Invisage Technologies, Inc. Pixels de film quantique à faible bruit de lecture
WO2018075705A1 (fr) 2016-10-20 2018-04-26 Invisage Technologies, Inc. Capteur d'image avec électrodes de collecte d'électrons et de trous
US11037977B2 (en) * 2018-08-03 2021-06-15 Semiconductor Components Industries, Llc Stacked image sensor capable of simultaneous integration of electrons and holes
FR3085246B1 (fr) 2018-08-23 2020-09-18 St Microelectronics Crolles 2 Sas Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique

Also Published As

Publication number Publication date
CN110858880A (zh) 2020-03-03
FR3085246A1 (fr) 2020-02-28
US20200068148A1 (en) 2020-02-27
US11102429B2 (en) 2021-08-24
CN110858880B (zh) 2022-05-31
CN211406121U (zh) 2020-09-01

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