FR3091274B1 - Nanocristaux de semi-conducteurs dopés, leur procédé de préparation et leurs utilisations - Google Patents

Nanocristaux de semi-conducteurs dopés, leur procédé de préparation et leurs utilisations Download PDF

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Publication number
FR3091274B1
FR3091274B1 FR1874171A FR1874171A FR3091274B1 FR 3091274 B1 FR3091274 B1 FR 3091274B1 FR 1874171 A FR1874171 A FR 1874171A FR 1874171 A FR1874171 A FR 1874171A FR 3091274 B1 FR3091274 B1 FR 3091274B1
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FR
France
Prior art keywords
nanocrystals
preparation process
doped semiconductors
oxidation state
representing
Prior art date
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Active
Application number
FR1874171A
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English (en)
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FR3091274A1 (fr
Inventor
Tugce Akdas
Peter Reiss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Publication date
Application filed by Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority to FR1874171A priority Critical patent/FR3091274B1/fr
Priority to CN201980092678.8A priority patent/CN113498405B/zh
Priority to PCT/FR2019/053287 priority patent/WO2020136347A1/fr
Priority to US17/418,347 priority patent/US11905446B2/en
Priority to EP19850730.3A priority patent/EP3883884A1/fr
Publication of FR3091274A1 publication Critical patent/FR3091274A1/fr
Application granted granted Critical
Publication of FR3091274B1 publication Critical patent/FR3091274B1/fr
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/70—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/088—Other phosphides containing plural metal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/45—Wavelength conversion means, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Luminescent Compositions (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

La présente invention concerne un ensemble de nanocristaux comprenant un semi-conducteur comprenant A représentant un métal ou métalloïde à l’état d’oxydation +III et B représentant un élément à l’état d’oxydation –III, lesdits nanocristaux étant dopés, en moyenne par nanocristal, par un atome de C choisi parmi les métaux de transition à l’état d’oxydation +I ou +II. La présente invention concerne également son procédé de préparation et ses différentes utilisations.
FR1874171A 2018-12-26 2018-12-26 Nanocristaux de semi-conducteurs dopés, leur procédé de préparation et leurs utilisations Active FR3091274B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1874171A FR3091274B1 (fr) 2018-12-26 2018-12-26 Nanocristaux de semi-conducteurs dopés, leur procédé de préparation et leurs utilisations
CN201980092678.8A CN113498405B (zh) 2018-12-26 2019-12-23 掺杂的半导体纳米晶体、其制备方法及其应用
PCT/FR2019/053287 WO2020136347A1 (fr) 2018-12-26 2019-12-23 Nanocristaux de semi-conducteurs dopés, leur procédé de préparation et leurs utilisations
US17/418,347 US11905446B2 (en) 2018-12-26 2019-12-23 Doped semiconductor nanocrystals, method for preparing same and uses thereof
EP19850730.3A EP3883884A1 (fr) 2018-12-26 2019-12-23 Nanocristaux de semi-conducteurs dopés, leur procédé de préparation et leurs utilisations

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1874171A FR3091274B1 (fr) 2018-12-26 2018-12-26 Nanocristaux de semi-conducteurs dopés, leur procédé de préparation et leurs utilisations

Publications (2)

Publication Number Publication Date
FR3091274A1 FR3091274A1 (fr) 2020-07-03
FR3091274B1 true FR3091274B1 (fr) 2023-04-28

Family

ID=66867321

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1874171A Active FR3091274B1 (fr) 2018-12-26 2018-12-26 Nanocristaux de semi-conducteurs dopés, leur procédé de préparation et leurs utilisations

Country Status (5)

Country Link
US (1) US11905446B2 (fr)
EP (1) EP3883884A1 (fr)
CN (1) CN113498405B (fr)
FR (1) FR3091274B1 (fr)
WO (1) WO2020136347A1 (fr)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5985173A (en) * 1997-11-18 1999-11-16 Gray; Henry F. Phosphors having a semiconductor host surrounded by a shell
US6090200A (en) * 1997-11-18 2000-07-18 Gray; Henry F. Nanoparticle phosphors manufactured using the bicontinuous cubic phase process
US7175778B1 (en) * 2002-05-10 2007-02-13 Nanocrystals Technology Lp Self-aligning QCA based nanomaterials
DE112006001067T5 (de) * 2005-04-25 2008-03-13 Board Of Trustees Of The University Of Arkansas Dotierte Halbleiter-Nanokristalle und Verfahren zu deren Herstellung
FR2930786B1 (fr) * 2008-05-05 2010-12-31 Commissariat Energie Atomique Procede de preparation de nanocristaux luminescents, nanocristaux ainsi obtenus et leurs utilisations
FR2937885B1 (fr) 2008-11-04 2011-05-06 Commissariat Energie Atomique Nanoparticules fluorescentes, leur procede de preparation et leur application en marquage biologique
WO2011003003A1 (fr) * 2009-07-01 2011-01-06 The Board Of Trustees Of The University Of Arkansas Nanocristaux semi-conducteurs dopés par un métal et leurs procédés de fabrication
WO2012111009A2 (fr) * 2011-02-14 2012-08-23 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. Nanoparticules semi-conductrices lourdement dopées
CN102908961B (zh) * 2012-09-10 2014-08-27 上海交通大学医学院附属新华医院 功能性纳米颗粒复合非交联微球及其制备方法和应用
US11142692B2 (en) * 2015-07-28 2021-10-12 The Regents Of The University Of California Capped co-doped core/shell nanocrystals for visible light emission
CN106564931B (zh) * 2015-09-22 2018-05-29 苏州星烁纳米科技有限公司 一种纳米晶体制备方法

Also Published As

Publication number Publication date
CN113498405A (zh) 2021-10-12
EP3883884A1 (fr) 2021-09-29
US11905446B2 (en) 2024-02-20
WO2020136347A1 (fr) 2020-07-02
CN113498405B (zh) 2025-02-25
US20220064525A1 (en) 2022-03-03
FR3091274A1 (fr) 2020-07-03

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