FR3096834B1 - Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite - Google Patents

Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite Download PDF

Info

Publication number
FR3096834B1
FR3096834B1 FR1905638A FR1905638A FR3096834B1 FR 3096834 B1 FR3096834 B1 FR 3096834B1 FR 1905638 A FR1905638 A FR 1905638A FR 1905638 A FR1905638 A FR 1905638A FR 3096834 B1 FR3096834 B1 FR 3096834B1
Authority
FR
France
Prior art keywords
emitting diode
optoelectronic device
light emitting
leakage current
current limiting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1905638A
Other languages
English (en)
Other versions
FR3096834A1 (fr
Inventor
Florian Dupont
Jérôme Napierala
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aledia
Original Assignee
Aledia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aledia filed Critical Aledia
Priority to FR1905638A priority Critical patent/FR3096834B1/fr
Priority to PCT/FR2020/050902 priority patent/WO2020240140A1/fr
Priority to EP20737521.3A priority patent/EP3977512A1/fr
Priority to US17/613,699 priority patent/US12002841B2/en
Publication of FR3096834A1 publication Critical patent/FR3096834A1/fr
Application granted granted Critical
Publication of FR3096834B1 publication Critical patent/FR3096834B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Led Devices (AREA)

Abstract

Dispositif optoélectronique (10) comportant un substrat (101) délimitant une face support (101a), au moins une diode électroluminescente (11) comportant une première portion semiconductrice (112) dopée de forme globalement filaire suivant un axe longitudinal (11b) et ayant des surfaces latérales (112b) parallèles à l’axe longitudinal (11b), la portion active (111) étant agencée sur une extrémité sommitale (11a) de la première portion semiconductrice (112), une deuxième portion semiconductrice (113) dopée selon un deuxième type de dopage et agencée, au moins en partie, sur tout ou partie de la portion active (111), une couche résistive électriquement (114), dont la résistance électrique est supérieure à celle de la portion active (111), recouvrant au moins tout ou partie des surfaces latérales (112b) de la première portion semiconductrice (112) et tout ou partie de la surface de l’extrémité sommitale (11a) de la première portion semiconductrice (112) non recouverte par la portion active (111).
FR1905638A 2019-05-28 2019-05-28 Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite Active FR3096834B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1905638A FR3096834B1 (fr) 2019-05-28 2019-05-28 Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite
PCT/FR2020/050902 WO2020240140A1 (fr) 2019-05-28 2020-05-28 Dispositif optoélectronique comportant deux diodes électroluminescentes filaires ayant chacune une couche limitant les courants de fuite
EP20737521.3A EP3977512A1 (fr) 2019-05-28 2020-05-28 Dispositif optoélectronique comportant deux diodes électroluminescentes filaires ayant chacune une couche limitant les courants de fuite
US17/613,699 US12002841B2 (en) 2019-05-28 2020-05-28 Optoelectronic device comprising two wire-shaped light-emitting diodes each having a layer that limits the leakage currents

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1905638 2019-05-28
FR1905638A FR3096834B1 (fr) 2019-05-28 2019-05-28 Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite

Publications (2)

Publication Number Publication Date
FR3096834A1 FR3096834A1 (fr) 2020-12-04
FR3096834B1 true FR3096834B1 (fr) 2022-11-25

Family

ID=67957071

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1905638A Active FR3096834B1 (fr) 2019-05-28 2019-05-28 Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite

Country Status (4)

Country Link
US (1) US12002841B2 (fr)
EP (1) EP3977512A1 (fr)
FR (1) FR3096834B1 (fr)
WO (1) WO2020240140A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3096509B1 (fr) * 2019-05-20 2021-05-28 Aledia Dispositif optoelectronique avec diodes electroluminescentes dont une zone dopee integre une portion externe a base d’aluminium et de nitrure de galium

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101681813B (zh) * 2007-01-12 2012-07-11 昆南诺股份有限公司 氮化物纳米线及其制造方法
JP5097532B2 (ja) * 2007-12-21 2012-12-12 パナソニック株式会社 化合物半導体発光素子の製造方法
KR101622308B1 (ko) * 2009-11-17 2016-05-18 삼성전자주식회사 발광소자 및 그 제조방법
EP2583317A4 (fr) * 2010-06-18 2016-06-15 Glo Ab Structure à diodes électroluminescentes de nanofils et procédé de fabrication associé
WO2011162715A1 (fr) * 2010-06-24 2011-12-29 Glo Ab Substrat comportant une couche tampon pour croissance de nanofils orientés.
FR2995729B1 (fr) * 2012-09-18 2016-01-01 Aledia Dispositif opto-electrique a microfils ou nanofils semiconducteurs et son procede de fabrication
FR2997558B1 (fr) * 2012-10-26 2015-12-18 Aledia Dispositif opto-electrique et son procede de fabrication
TW201515091A (zh) * 2013-06-18 2015-04-16 Glo Ab 藉由乾式蝕刻移除３ｄ半導體結構之方法
US9972750B2 (en) * 2013-12-13 2018-05-15 Glo Ab Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire LEDs
FR3053530B1 (fr) 2016-06-30 2018-07-27 Aledia Dispositif optoelectronique a pixels a contraste et luminance ameliores
US10388641B2 (en) 2017-10-19 2019-08-20 Tectus Corporation Ultra-dense LED projector

Also Published As

Publication number Publication date
US20220231076A1 (en) 2022-07-21
FR3096834A1 (fr) 2020-12-04
US12002841B2 (en) 2024-06-04
WO2020240140A1 (fr) 2020-12-03
EP3977512A1 (fr) 2022-04-06

Similar Documents

Publication Publication Date Title
JP5547039B2 (ja) 均一な電流拡がりを有するｌｅｄ
JP5614938B2 (ja) 半導体発光素子
US20050225973A1 (en) LED with series-connected monolithically integrated mesas
JP5404026B2 (ja) 受発光一体型素子アレイおよびセンサ装置
TW200618355A (en) Semiconductor light-emitting device and its manufacturing method
JPH11150303A (ja) 発光部品
KR20120054006A (ko) 자외선 스펙트럼 영역에 대한 ｐ-콘택트 및 발광 다이오드
EP2362450A3 (fr) Diode électroluminescente, boîtier de diode électroluminescente, procédé de fabrication de diode électroluminescente et système d'éclairage
JP2010520640A5 (fr)
ES2143077T3 (es) Diodo emisor de luz de geometria vertical con una capa activa de nitruro del grupo iii y vida util aumentada.
EP1538680A3 (fr) Dispositf électroluminescent
ATE515803T1 (de) Dioden auf galliumnitridbasis mit betrieb bei niedriger vorwärtsspannung und niedrigem rückwärtsstrom
US11329196B2 (en) Optoelectronic device mounting structure with embedded heatsink element
WO2009078482A1 (fr) Dispositif électroluminescent semi-conducteur
KR20190098199A (ko) 동작 피드백을 위한 센서 세그먼트를 구비한 발광 다이오드들
JP3631359B2 (ja) 窒化物半導体発光素子
FR3096834B1 (fr) Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite
US20090242913A1 (en) Silicon based light emitting diode
TW200618349A (en) Transparent electrode for semiconductor light-emitting device
JP4023893B2 (ja) 発光素子アレイ及び発光素子
KR20090073935A (ko) 3족 질화물 반도체 발광소자
EP2031717A3 (fr) Élément électroluminescent semi-conducteur
JP2018049895A (ja) 半導体装置
US20100224887A1 (en) Semiconductor light emitting device
EP1564820A4 (fr) Dispositif d'emission de lumiere semi-conducteur au phosphure de bore, son procede de fabrication et diode d'emission de lumiere

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20201204

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7