FR3123153B1 - Procédé de fabrication d'un dispositif optoélectronique - Google Patents

Procédé de fabrication d'un dispositif optoélectronique Download PDF

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Publication number
FR3123153B1
FR3123153B1 FR2105156A FR2105156A FR3123153B1 FR 3123153 B1 FR3123153 B1 FR 3123153B1 FR 2105156 A FR2105156 A FR 2105156A FR 2105156 A FR2105156 A FR 2105156A FR 3123153 B1 FR3123153 B1 FR 3123153B1
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FR
France
Prior art keywords
active
stack
substrate
manufacturing
optoelectronic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2105156A
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English (en)
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FR3123153A1 (fr
Inventor
François Templier
Sébastien Becker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR2105156A priority Critical patent/FR3123153B1/fr
Priority to FR2111484A priority patent/FR3123146B1/fr
Priority to EP22172229.1A priority patent/EP4092736A1/fr
Priority to US17/741,713 priority patent/US12261161B2/en
Priority to CN202210528810.9A priority patent/CN115377082A/zh
Publication of FR3123153A1 publication Critical patent/FR3123153A1/fr
Application granted granted Critical
Publication of FR3123153B1 publication Critical patent/FR3123153B1/fr
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • H10F55/15—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/155—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

Procédé de fabrication d'un dispositif optoélectronique La présente description concerne un procédé de fabrication d'un dispositif optoélectronique, comportant les étapes suivantes :a) disposer un empilement actif de diode photosensible (103) sur un premier substrat ; b) disposer un empilement actif de LED (113) sur un deuxième substrat ; c) après les étapes a) et b), reporter l'empilement actif de diode photosensible (103) sur l'empilement actif de LED (113), puis retirer le premier substrat ; et d) après l'étape c), reporter l'ensemble comportant l'empilement actif de diode photosensible (103) et l'empilement actif de LED (113) sur un circuit intégré de contrôle (151) préalablement formé dans et sur un troisième substrat semiconducteur, puis retirer le deuxième substrat. Figure pour l'abrégé : Fig. 1K
FR2105156A 2021-05-18 2021-05-18 Procédé de fabrication d'un dispositif optoélectronique Active FR3123153B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR2105156A FR3123153B1 (fr) 2021-05-18 2021-05-18 Procédé de fabrication d'un dispositif optoélectronique
FR2111484A FR3123146B1 (fr) 2021-05-18 2021-10-28 Procédé de fabrication d'un dispositif optoélectronique
EP22172229.1A EP4092736A1 (fr) 2021-05-18 2022-05-09 Procédé de fabrication d'un dispositif optoélectronique, dispositif correspondant et système le comprenant
US17/741,713 US12261161B2 (en) 2021-05-18 2022-05-11 Optoelectronic device manufacturing method
CN202210528810.9A CN115377082A (zh) 2021-05-18 2022-05-16 光电器件制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2105156 2021-05-18
FR2105156A FR3123153B1 (fr) 2021-05-18 2021-05-18 Procédé de fabrication d'un dispositif optoélectronique

Publications (2)

Publication Number Publication Date
FR3123153A1 FR3123153A1 (fr) 2022-11-25
FR3123153B1 true FR3123153B1 (fr) 2023-04-14

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
FR2105156A Active FR3123153B1 (fr) 2021-05-18 2021-05-18 Procédé de fabrication d'un dispositif optoélectronique
FR2111484A Active FR3123146B1 (fr) 2021-05-18 2021-10-28 Procédé de fabrication d'un dispositif optoélectronique

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR2111484A Active FR3123146B1 (fr) 2021-05-18 2021-10-28 Procédé de fabrication d'un dispositif optoélectronique

Country Status (1)

Country Link
FR (2) FR3123153B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3159853B1 (fr) 2024-03-04 2026-01-16 Commissariat Energie Atomique Dispositif optoelectronique comportant une diode electroluminescente superposee a un photodetecteur

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10978501B1 (en) * 2010-10-13 2021-04-13 Monolithic 3D Inc. Multilevel semiconductor device and structure with waveguides
CN106816520A (zh) * 2015-11-30 2017-06-09 隆达电子股份有限公司 波长转换材料及其应用
FR3090200B1 (fr) * 2018-12-13 2021-01-15 Commissariat Energie Atomique Procede de realisation d’un dispositif a diodes photo-emettrices et/ou photo-receptrices et a grille de collimation auto-alignee

Also Published As

Publication number Publication date
FR3123153A1 (fr) 2022-11-25
FR3123146B1 (fr) 2025-07-25
FR3123146A1 (fr) 2022-11-25

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