FR3130086B1 - Dispositif photonique pourvu d’une source laser et de moyens de gestion de la dissipation de chaleur - Google Patents

Dispositif photonique pourvu d’une source laser et de moyens de gestion de la dissipation de chaleur Download PDF

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Publication number
FR3130086B1
FR3130086B1 FR2113081A FR2113081A FR3130086B1 FR 3130086 B1 FR3130086 B1 FR 3130086B1 FR 2113081 A FR2113081 A FR 2113081A FR 2113081 A FR2113081 A FR 2113081A FR 3130086 B1 FR3130086 B1 FR 3130086B1
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FR
France
Prior art keywords
photonic device
heat dissipation
laser source
thermal transfer
device provided
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Application number
FR2113081A
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English (en)
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FR3130086A1 (fr
Inventor
Sylvie Menezo
Frédéric Mazur
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Scintil Photonics SAS
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Scintil Photonics SAS
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Publication date
Application filed by Scintil Photonics SAS filed Critical Scintil Photonics SAS
Priority to FR2113081A priority Critical patent/FR3130086B1/fr
Priority to US18/703,930 priority patent/US20240421557A1/en
Priority to EP22801479.1A priority patent/EP4423864B1/fr
Priority to CN202280069438.8A priority patent/CN118104089A/zh
Priority to PCT/EP2022/078525 priority patent/WO2023072610A1/fr
Priority to JP2024525202A priority patent/JP7682389B2/ja
Publication of FR3130086A1 publication Critical patent/FR3130086A1/fr
Application granted granted Critical
Publication of FR3130086B1 publication Critical patent/FR3130086B1/fr
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Lasers (AREA)

Abstract

La présente invention concerne un dispositif photonique et plus particulièrement un dispositif photonique qui comprend une source laser hétérogène et des moyens de dissipation thermique configurés pour dissiper la chaleur susceptible d’être émise par la source laser. Plus particulièrement, les moyens de dissipation thermique mettent en œuvre une couche de transfert thermique et un élément de transfert thermique agencés pour coopérer avec des plots de contact accessibles par la face avant du dispositif photonique. à cet égard, la couche de transfert thermique est faite d’un matériau électriquement isolant et est au contact de l’un et/ou l’autre des plots de contact, tandis que l’élément de transfert thermique se trouve exclusivement au contact de la couche de transfert thermique. Figure 2
FR2113081A 2021-10-29 2021-12-07 Dispositif photonique pourvu d’une source laser et de moyens de gestion de la dissipation de chaleur Active FR3130086B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR2113081A FR3130086B1 (fr) 2021-12-07 2021-12-07 Dispositif photonique pourvu d’une source laser et de moyens de gestion de la dissipation de chaleur
US18/703,930 US20240421557A1 (en) 2021-10-29 2022-10-13 Photonic device provided with a laser source and means for managing dissipation of heat
EP22801479.1A EP4423864B1 (fr) 2021-10-29 2022-10-13 Dispositif photonique pourvu d'une source laser et de moyens de gestion de la dissipation de chaleur
CN202280069438.8A CN118104089A (zh) 2021-10-29 2022-10-13 设置有激光源和用于管理热耗散的装置的光子器件
PCT/EP2022/078525 WO2023072610A1 (fr) 2021-10-29 2022-10-13 Dispositif photonique pourvu d'une source laser et de moyens de gestion de la dissipation de chaleur
JP2024525202A JP7682389B2 (ja) 2021-10-29 2022-10-13 レーザ源と熱の放散を管理するための手段を備えたフォトニックデバイス

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2113081 2021-12-07
FR2113081A FR3130086B1 (fr) 2021-12-07 2021-12-07 Dispositif photonique pourvu d’une source laser et de moyens de gestion de la dissipation de chaleur

Publications (2)

Publication Number Publication Date
FR3130086A1 FR3130086A1 (fr) 2023-06-09
FR3130086B1 true FR3130086B1 (fr) 2023-10-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
FR2113081A Active FR3130086B1 (fr) 2021-10-29 2021-12-07 Dispositif photonique pourvu d’une source laser et de moyens de gestion de la dissipation de chaleur

Country Status (2)

Country Link
CN (1) CN118104089A (fr)
FR (1) FR3130086B1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3007589B1 (fr) 2013-06-24 2015-07-24 St Microelectronics Crolles 2 Circuit integre photonique et procede de fabrication
FR3023066B1 (fr) * 2014-06-30 2017-10-27 Aledia Dispositif optoelectronique comprenant des diodes electroluminescentes et un circuit de commande
US10042115B2 (en) * 2016-04-19 2018-08-07 Stmicroelectronics (Crolles 2) Sas Electro-optic device with multiple photonic layers and related methods
US10651110B1 (en) * 2018-12-31 2020-05-12 Juniper Networks, Inc. Efficient heat-sinking in PIN diode

Also Published As

Publication number Publication date
FR3130086A1 (fr) 2023-06-09
CN118104089A (zh) 2024-05-28

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