FR3131075B1 - Structure semi-conductrice en nitrure du groupe iii sur silicium sur isolant et son procédé de croissance - Google Patents

Structure semi-conductrice en nitrure du groupe iii sur silicium sur isolant et son procédé de croissance Download PDF

Info

Publication number
FR3131075B1
FR3131075B1 FR2113655A FR2113655A FR3131075B1 FR 3131075 B1 FR3131075 B1 FR 3131075B1 FR 2113655 A FR2113655 A FR 2113655A FR 2113655 A FR2113655 A FR 2113655A FR 3131075 B1 FR3131075 B1 FR 3131075B1
Authority
FR
France
Prior art keywords
layer
silicon
semiconductor structure
insulation
nitride semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2113655A
Other languages
English (en)
Other versions
FR3131075A1 (fr
Inventor
Christelle Veytizou
Ionut Radu
Joff Derluyn
Stefan Degroote
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec Belgium
Soitec SA
Original Assignee
Soitec Belgium
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR2113655A priority Critical patent/FR3131075B1/fr
Application filed by Soitec Belgium, Soitec SA filed Critical Soitec Belgium
Priority to KR1020247023870A priority patent/KR20240116563A/ko
Priority to PCT/EP2022/082085 priority patent/WO2023110267A1/fr
Priority to US18/720,416 priority patent/US20250056858A1/en
Priority to JP2024527762A priority patent/JP2024545586A/ja
Priority to CN202280082217.4A priority patent/CN118679556A/zh
Priority to EP22817285.4A priority patent/EP4449482B1/fr
Priority to TW111144574A priority patent/TW202341486A/zh
Publication of FR3131075A1 publication Critical patent/FR3131075A1/fr
Application granted granted Critical
Publication of FR3131075B1 publication Critical patent/FR3131075B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01358—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being a Group III-V material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H10P36/07—Gettering within semiconductor bodies within silicon bodies of silicon-on-insulator structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1908—Preparing SOI wafers using silicon implanted buried insulating layers, e.g. oxide layers [SIMOX]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3256—Microstructure

Landscapes

  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)

Abstract

L’invention porte sur une structure semi-conductrice (1) comprenant : − un substrat de Silicium sur Isolant (101) comprenant : o une couche de base de silicium (10) ; o une couche intermédiaire (11) sur ladite couche de base (10) et comprenant : une couche riche en pièges (111) ; et un isolant enterré (121) sur la couche riche en pièges (111) ; et o une couche supérieure de silicium dopé de type n (12) sur ladite couche intermédiaire (11) ; et − un empilement (202) de couches semi-conductrices III-N épitaxiales sur ledit substrat (101) de Silicium sur Isolant, comprenant : o une première couche III-N active (21) sur ladite couche supérieure (12) ; o une deuxième couche III-N active (22) sur ladite première couche III-N active (21) ; avec un Gaz d’Electrons bidimensionnel (200) entre ladite première couche III-N active (21) et ladite deuxième couche III-N active (22). Figure à publier avec l’abrégé : Fig. 3
FR2113655A 2021-12-16 2021-12-16 Structure semi-conductrice en nitrure du groupe iii sur silicium sur isolant et son procédé de croissance Active FR3131075B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR2113655A FR3131075B1 (fr) 2021-12-16 2021-12-16 Structure semi-conductrice en nitrure du groupe iii sur silicium sur isolant et son procédé de croissance
PCT/EP2022/082085 WO2023110267A1 (fr) 2021-12-16 2022-11-16 Structure semi-conductrice au nitrure du groupe iii sur silicium sur isolant et son procédé de croissance
US18/720,416 US20250056858A1 (en) 2021-12-16 2022-11-16 Group iii-nitride semiconductor structure on silicon-on-insulator and method of growing thereof
JP2024527762A JP2024545586A (ja) 2021-12-16 2022-11-16 シリコンオンインシュレータ上のｉｉｉ族窒化物半導体構造およびそれを成長させる方法
KR1020247023870A KR20240116563A (ko) 2021-12-16 2022-11-16 실리콘-온-절연체 상의 iii족-질화물 반도체 구조물 및 그 성장 방법
CN202280082217.4A CN118679556A (zh) 2021-12-16 2022-11-16 绝缘体上硅上的第iii族氮化物半导体结构及其生长方法
EP22817285.4A EP4449482B1 (fr) 2021-12-16 2022-11-16 Structure semi-conductrice au nitrure du groupe iii sur silicium sur isolant et son procédé de croissance
TW111144574A TW202341486A (zh) 2021-12-16 2022-11-22 絕緣體上矽上的ⅲ族氮化物半導體結構及其生長方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2113655 2021-12-16
FR2113655A FR3131075B1 (fr) 2021-12-16 2021-12-16 Structure semi-conductrice en nitrure du groupe iii sur silicium sur isolant et son procédé de croissance

Publications (2)

Publication Number Publication Date
FR3131075A1 FR3131075A1 (fr) 2023-06-23
FR3131075B1 true FR3131075B1 (fr) 2023-12-22

Family

ID=81648394

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2113655A Active FR3131075B1 (fr) 2021-12-16 2021-12-16 Structure semi-conductrice en nitrure du groupe iii sur silicium sur isolant et son procédé de croissance

Country Status (8)

Country Link
US (1) US20250056858A1 (fr)
EP (1) EP4449482B1 (fr)
JP (1) JP2024545586A (fr)
KR (1) KR20240116563A (fr)
CN (1) CN118679556A (fr)
FR (1) FR3131075B1 (fr)
TW (1) TW202341486A (fr)
WO (1) WO2023110267A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3161798B1 (fr) * 2024-04-29 2026-04-24 Soitec Belgium Structure semi-conductrice et procédé de fabrication pour l'intégration monolithique de fonctionnalités
WO2025257265A1 (fr) * 2024-06-12 2025-12-18 Soitec Procédé de fabrication d'un substrat photonique
FR3163488A1 (fr) * 2024-06-12 2025-12-19 Soitec Substrat photonique et utilisation d’un tel substrat dans un dispositif de modulation optique
CN121078798B (zh) * 2025-11-05 2026-03-24 芯联集成电路制造股份有限公司 一种绝缘体上硅衬底及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7999288B2 (en) * 2007-11-26 2011-08-16 International Rectifier Corporation High voltage durability III-nitride semiconductor device
JP5117588B2 (ja) * 2010-09-07 2013-01-16 株式会社東芝 窒化物半導体結晶層の製造方法
JP5903818B2 (ja) * 2011-09-26 2016-04-13 富士通株式会社 化合物半導体装置及びその製造方法
US9721969B2 (en) * 2015-06-30 2017-08-01 Globalfoundries Singapore Pte. Ltd. Creation of wide band gap material for integration to SOI thereof
US10644142B2 (en) * 2017-12-22 2020-05-05 Nxp Usa, Inc. Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication therefor

Also Published As

Publication number Publication date
CN118679556A (zh) 2024-09-20
FR3131075A1 (fr) 2023-06-23
EP4449482A1 (fr) 2024-10-23
US20250056858A1 (en) 2025-02-13
JP2024545586A (ja) 2024-12-10
TW202341486A (zh) 2023-10-16
EP4449482C0 (fr) 2025-09-24
KR20240116563A (ko) 2024-07-29
EP4449482B1 (fr) 2025-09-24
WO2023110267A1 (fr) 2023-06-22

Similar Documents

Publication Publication Date Title
FR3131075B1 (fr) Structure semi-conductrice en nitrure du groupe iii sur silicium sur isolant et son procédé de croissance
US12453183B2 (en) Semiconductor device with low potential terminals connected to wells
KR100630110B1 (ko) 반도체 장치 및 그 제조방법
TWI250669B (en) Semiconductor light emitting element and its manufacturing method
WO2001091162A2 (fr) Transistor bipolaire et son procede de fabrication
Burghartz et al. Identification of perimeter depletion and emitter plug effects in deep-submicrometer, shallow-junction polysilicon emitter bipolar transistors
US20130256697A1 (en) Group-iii-nitride based layer structure and semiconductor device
JP5150802B2 (ja) 窒化物基半導体デバイスのための低ドープ層
JP2004031884A (ja) ヘテロバイポーラトランジスタおよびその製造方法
CN110021661A (zh) 半导体器件及其制作方法
JP2017183582A (ja) 窒化物半導体基板、半導体装置、および窒化物半導体基板の製造方法
US8816503B2 (en) Semiconductor device with buried electrode
JP2019186242A (ja) 窒化物半導体装置
CN103597602A (zh) 双极穿通半导体器件和制造这种半导体器件的方法
US7897998B2 (en) III-nitride power semiconductor device
JP2019186250A (ja) 窒化物半導体装置および窒化物半導体装置の製造方法
EP1355363A3 (fr) Dispositif à semiconducteur et son procédé de fabrication
CN106409890B (zh) 鳍式双极结型晶体管的形成方法
US20130313568A1 (en) Silicon carbide semiconductor device and method for manufacturing the same
CN111276533A (zh) 一种选择区域凹槽栅GaN电流孔径垂直结构晶体管结构及实现方法
CN113299766B (zh) 一种GaN准垂直结构二极管及其制备方法
US20240088281A1 (en) Dope p galium nitride electronic component
US6642096B2 (en) Bipolar transistor manufacturing
WO2023238477A1 (fr) Dispositif à semi-conducteur au nitrure
JP3302288B2 (ja) 半導体装置およびその製造方法

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20230623

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5