FR3133514B1 - Procédé de correction d’épaisseur d’une couche piézoélectrique - Google Patents

Procédé de correction d’épaisseur d’une couche piézoélectrique Download PDF

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Publication number
FR3133514B1
FR3133514B1 FR2202018A FR2202018A FR3133514B1 FR 3133514 B1 FR3133514 B1 FR 3133514B1 FR 2202018 A FR2202018 A FR 2202018A FR 2202018 A FR2202018 A FR 2202018A FR 3133514 B1 FR3133514 B1 FR 3133514B1
Authority
FR
France
Prior art keywords
piezoelectric layer
thickness
layer
piezoelectric
correcting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2202018A
Other languages
English (en)
Other versions
FR3133514A1 (fr
Inventor
Alexis Drouin
Cédric Charles-Alfred
Isabelle Huyet
Eric Butaud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR2202018A priority Critical patent/FR3133514B1/fr
Priority to TW112106983A priority patent/TW202404139A/zh
Priority to CN202380022992.5A priority patent/CN118743330A/zh
Priority to PCT/FR2023/050303 priority patent/WO2023170363A1/fr
Priority to EP23713705.4A priority patent/EP4490991A1/fr
Priority to JP2024545813A priority patent/JP2025512607A/ja
Priority to KR1020247033290A priority patent/KR20240155965A/ko
Priority to US18/843,028 priority patent/US20250194423A1/en
Publication of FR3133514A1 publication Critical patent/FR3133514A1/fr
Application granted granted Critical
Publication of FR3133514B1 publication Critical patent/FR3133514B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

L’invention concerne un procédé de correction d’épaisseur d’une couche piézoélectrique (3) agencée sur un substrat du type piézoélectrique sur isolant, comprenant les étapes suivantes : la mesure de l’épaisseur d’au moins une couche intermédiaire (2) localisée entre la couche piézoélectrique (3) et un substrat support (1), la mesure de l’épaisseur de la couche piézoélectrique (3), à partir desdites mesures d’épaisseur de l’au moins une couche intermédiaire (2) et de la couche piézoélectrique (3) et d’un modèle numérique d’au moins une propriété de la couche piézoélectrique (3) en fonction d’une pluralité de couples d’épaisseurs de la couche piézoélectrique (3) et de ladite au moins une couche intermédiaire (2), le calcul d’une correction d’épaisseur de la couche piézoélectrique (3) pour obtenir une valeur cible de chaque propriété, l’application de la correction de l’épaisseur de la couche piézoélectrique (3) par un procédé d’abrasion de manière topographiquement discriminée. Figure pour l’abrégé : Fig 2E
FR2202018A 2022-03-08 2022-03-08 Procédé de correction d’épaisseur d’une couche piézoélectrique Active FR3133514B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR2202018A FR3133514B1 (fr) 2022-03-08 2022-03-08 Procédé de correction d’épaisseur d’une couche piézoélectrique
TW112106983A TW202404139A (zh) 2022-03-08 2023-02-24 用於校正壓電層厚度之方法
PCT/FR2023/050303 WO2023170363A1 (fr) 2022-03-08 2023-03-07 Procédé de correction d'épaisseur d'une couche piézoélectrique
EP23713705.4A EP4490991A1 (fr) 2022-03-08 2023-03-07 Procédé de correction d'épaisseur d'une couche piézoélectrique
CN202380022992.5A CN118743330A (zh) 2022-03-08 2023-03-07 用于校正压电层的厚度的方法
JP2024545813A JP2025512607A (ja) 2022-03-08 2023-03-07 圧電体層の厚さを補正するための方法
KR1020247033290A KR20240155965A (ko) 2022-03-08 2023-03-07 압전층의 두께를 보정하기 위한 공정
US18/843,028 US20250194423A1 (en) 2022-03-08 2023-03-07 Method for correcting the thickness of a piezoelectric layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2202018A FR3133514B1 (fr) 2022-03-08 2022-03-08 Procédé de correction d’épaisseur d’une couche piézoélectrique
FR2202018 2022-03-08

Publications (2)

Publication Number Publication Date
FR3133514A1 FR3133514A1 (fr) 2023-09-15
FR3133514B1 true FR3133514B1 (fr) 2025-01-10

Family

ID=83188877

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2202018A Active FR3133514B1 (fr) 2022-03-08 2022-03-08 Procédé de correction d’épaisseur d’une couche piézoélectrique

Country Status (8)

Country Link
US (1) US20250194423A1 (fr)
EP (1) EP4490991A1 (fr)
JP (1) JP2025512607A (fr)
KR (1) KR20240155965A (fr)
CN (1) CN118743330A (fr)
FR (1) FR3133514B1 (fr)
TW (1) TW202404139A (fr)
WO (1) WO2023170363A1 (fr)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000209063A (ja) * 1998-11-12 2000-07-28 Mitsubishi Electric Corp 薄膜圧電素子
FR3053532B1 (fr) * 2016-06-30 2018-11-16 Soitec Structure hybride pour dispositif a ondes acoustiques de surface

Also Published As

Publication number Publication date
TW202404139A (zh) 2024-01-16
WO2023170363A1 (fr) 2023-09-14
FR3133514A1 (fr) 2023-09-15
JP2025512607A (ja) 2025-04-18
US20250194423A1 (en) 2025-06-12
CN118743330A (zh) 2024-10-01
KR20240155965A (ko) 2024-10-29
EP4490991A1 (fr) 2025-01-15

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