FR3146545B1 - Dispositif semi-conducteur à résistances diffusées, procédé de commande et capteur associés - Google Patents

Dispositif semi-conducteur à résistances diffusées, procédé de commande et capteur associés

Info

Publication number
FR3146545B1
FR3146545B1 FR2302099A FR2302099A FR3146545B1 FR 3146545 B1 FR3146545 B1 FR 3146545B1 FR 2302099 A FR2302099 A FR 2302099A FR 2302099 A FR2302099 A FR 2302099A FR 3146545 B1 FR3146545 B1 FR 3146545B1
Authority
FR
France
Prior art keywords
sensor
control method
semiconductor device
associated control
diffused resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2302099A
Other languages
English (en)
Other versions
FR3146545A1 (fr
Inventor
Francois Tailliet
Marc Battista
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics International NV Switzerland
STMicroelectronics International NV
Original Assignee
STMicroelectronics International NV Switzerland
STMicroelectronics International NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics International NV Switzerland, STMicroelectronics International NV filed Critical STMicroelectronics International NV Switzerland
Priority to FR2302099A priority Critical patent/FR3146545B1/fr
Priority to US18/594,210 priority patent/US20240304731A1/en
Priority to CN202420435700.2U priority patent/CN222192965U/zh
Publication of FR3146545A1 publication Critical patent/FR3146545A1/fr
Application granted granted Critical
Publication of FR3146545B1 publication Critical patent/FR3146545B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/40Resistors
    • H10D1/43Resistors having PN junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

Dispositif semi-conducteur à résistances diffusées, procédé de commande et capteur associés La présente description concerne un dispositif électronique (10) comprenant des première (12') et deuxième (12) résistances diffusées en contact l'une avec l'autre de manière à former une jonction PN, le dispositif étant configuré pour que la différence de potentiel entre les première et deuxième résistances soit constante en tout point de la jonction PN, le dispositif étant configuré pour que la jonction PN soit polarisé en inverse. Figure pour l'abrégé : Fig. 1C
FR2302099A 2023-03-07 2023-03-07 Dispositif semi-conducteur à résistances diffusées, procédé de commande et capteur associés Active FR3146545B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR2302099A FR3146545B1 (fr) 2023-03-07 2023-03-07 Dispositif semi-conducteur à résistances diffusées, procédé de commande et capteur associés
US18/594,210 US20240304731A1 (en) 2023-03-07 2024-03-04 Resistor
CN202420435700.2U CN222192965U (zh) 2023-03-07 2024-03-07 电子设备、设备和传感器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2302099A FR3146545B1 (fr) 2023-03-07 2023-03-07 Dispositif semi-conducteur à résistances diffusées, procédé de commande et capteur associés
FR2302099 2023-03-07

Publications (2)

Publication Number Publication Date
FR3146545A1 FR3146545A1 (fr) 2024-09-13
FR3146545B1 true FR3146545B1 (fr) 2025-09-05

Family

ID=87035969

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2302099A Active FR3146545B1 (fr) 2023-03-07 2023-03-07 Dispositif semi-conducteur à résistances diffusées, procédé de commande et capteur associés

Country Status (2)

Country Link
US (1) US20240304731A1 (fr)
FR (1) FR3146545B1 (fr)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU1819770A (en) * 1969-08-21 1972-02-03 Rca Corporation A high value, high voltage diffused resistor network for integrated circuits
US3836796A (en) * 1973-09-24 1974-09-17 Nat Semiconductor Corp Semiconductor pressure transducer employing novel temperature compensation means
US8384157B2 (en) * 2006-05-10 2013-02-26 International Rectifier Corporation High ohmic integrated resistor with improved linearity
FR2918504B1 (fr) * 2007-07-06 2009-11-27 St Microelectronics Sa Resistance integree diffusee
JP5430907B2 (ja) * 2008-10-31 2014-03-05 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
US8300370B2 (en) * 2008-11-14 2012-10-30 Mediatek Inc. ESD protection circuit and circuitry of IC applying the ESD protection circuit
JP5827065B2 (ja) * 2011-08-08 2015-12-02 スパンション エルエルシー 半導体装置及び分圧回路
US9704944B2 (en) * 2013-02-28 2017-07-11 Texas Instruments Deutschland Gmbh Three precision resistors of different sheet resistance at same level
EP3174096A1 (fr) * 2015-11-27 2017-05-31 Nxp B.V. Résistance diffusée
US12316105B2 (en) * 2021-06-11 2025-05-27 Semiconductor Components Industries, Llc Interference filter and electrostatic discharge / electrical surge protection circuit and device

Also Published As

Publication number Publication date
US20240304731A1 (en) 2024-09-12
FR3146545A1 (fr) 2024-09-13

Similar Documents

Publication Publication Date Title
FR2370270A1 (fr) Capteur de pression a fonctions multiples
GB1469849A (en) Electronic battery testing device
DE59911621D1 (de) Vorrichtung zum messen der konzentration von ionen in einer messflüssigkeit
KR910006736A (ko) 전자부품의 검사장치
FR3146545B1 (fr) Dispositif semi-conducteur à résistances diffusées, procédé de commande et capteur associés
DE59502915D1 (de) Gassensor
FR2368019A1 (fr) Debit-metre massique
JPS52101967A (en) Semiconductor device
KR940013681A (ko) 바이트이동식절삭장치
US3448256A (en) Semiconductor potentiometric device for multiplication and division
JPS5660066A (en) Semiconductor strain detector
JPS57113241A (en) Semiconductor device
JPS6164724U (fr)
JPS5322385A (en) Diffusion type semiconductor pr essure receiving element
JPS55113338A (en) Wire cut detection in semiconductor wire bonding device
FR2385097A1 (fr) Detecteur de fumee
BE899124A (fr) Appareil avertisseur pour etalonnage.
JPS5563877A (en) Pressure-sensitive semiconductor device
JPS5563878A (en) Pressure-sensitive semiconductor device
RU1833821C (ru) Прецизионный двухполупериодный выпр митель
SU138456A1 (ru) Устройство дл управлени копировальным станком по контуру чертежа
JPS5353266A (en) Probe card
JPS5692443A (en) Gas concentration detecting device using electrochemical gas sensor
Ward et al. Transient analysis of MOS transistors
JPS53143162A (en) Production of semiconductor device

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20240913

PLFP Fee payment

Year of fee payment: 3