FR3146545B1 - Dispositif semi-conducteur à résistances diffusées, procédé de commande et capteur associés - Google Patents
Dispositif semi-conducteur à résistances diffusées, procédé de commande et capteur associésInfo
- Publication number
- FR3146545B1 FR3146545B1 FR2302099A FR2302099A FR3146545B1 FR 3146545 B1 FR3146545 B1 FR 3146545B1 FR 2302099 A FR2302099 A FR 2302099A FR 2302099 A FR2302099 A FR 2302099A FR 3146545 B1 FR3146545 B1 FR 3146545B1
- Authority
- FR
- France
- Prior art keywords
- sensor
- control method
- semiconductor device
- associated control
- diffused resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/43—Resistors having PN junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
Dispositif semi-conducteur à résistances diffusées, procédé de commande et capteur associés La présente description concerne un dispositif électronique (10) comprenant des première (12') et deuxième (12) résistances diffusées en contact l'une avec l'autre de manière à former une jonction PN, le dispositif étant configuré pour que la différence de potentiel entre les première et deuxième résistances soit constante en tout point de la jonction PN, le dispositif étant configuré pour que la jonction PN soit polarisé en inverse. Figure pour l'abrégé : Fig. 1C
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2302099A FR3146545B1 (fr) | 2023-03-07 | 2023-03-07 | Dispositif semi-conducteur à résistances diffusées, procédé de commande et capteur associés |
| US18/594,210 US20240304731A1 (en) | 2023-03-07 | 2024-03-04 | Resistor |
| CN202420435700.2U CN222192965U (zh) | 2023-03-07 | 2024-03-07 | 电子设备、设备和传感器 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2302099A FR3146545B1 (fr) | 2023-03-07 | 2023-03-07 | Dispositif semi-conducteur à résistances diffusées, procédé de commande et capteur associés |
| FR2302099 | 2023-03-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR3146545A1 FR3146545A1 (fr) | 2024-09-13 |
| FR3146545B1 true FR3146545B1 (fr) | 2025-09-05 |
Family
ID=87035969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR2302099A Active FR3146545B1 (fr) | 2023-03-07 | 2023-03-07 | Dispositif semi-conducteur à résistances diffusées, procédé de commande et capteur associés |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20240304731A1 (fr) |
| FR (1) | FR3146545B1 (fr) |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU1819770A (en) * | 1969-08-21 | 1972-02-03 | Rca Corporation | A high value, high voltage diffused resistor network for integrated circuits |
| US3836796A (en) * | 1973-09-24 | 1974-09-17 | Nat Semiconductor Corp | Semiconductor pressure transducer employing novel temperature compensation means |
| US8384157B2 (en) * | 2006-05-10 | 2013-02-26 | International Rectifier Corporation | High ohmic integrated resistor with improved linearity |
| FR2918504B1 (fr) * | 2007-07-06 | 2009-11-27 | St Microelectronics Sa | Resistance integree diffusee |
| JP5430907B2 (ja) * | 2008-10-31 | 2014-03-05 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置 |
| US8300370B2 (en) * | 2008-11-14 | 2012-10-30 | Mediatek Inc. | ESD protection circuit and circuitry of IC applying the ESD protection circuit |
| JP5827065B2 (ja) * | 2011-08-08 | 2015-12-02 | スパンション エルエルシー | 半導体装置及び分圧回路 |
| US9704944B2 (en) * | 2013-02-28 | 2017-07-11 | Texas Instruments Deutschland Gmbh | Three precision resistors of different sheet resistance at same level |
| EP3174096A1 (fr) * | 2015-11-27 | 2017-05-31 | Nxp B.V. | Résistance diffusée |
| US12316105B2 (en) * | 2021-06-11 | 2025-05-27 | Semiconductor Components Industries, Llc | Interference filter and electrostatic discharge / electrical surge protection circuit and device |
-
2023
- 2023-03-07 FR FR2302099A patent/FR3146545B1/fr active Active
-
2024
- 2024-03-04 US US18/594,210 patent/US20240304731A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20240304731A1 (en) | 2024-09-12 |
| FR3146545A1 (fr) | 2024-09-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PLFP | Fee payment |
Year of fee payment: 2 |
|
| PLSC | Publication of the preliminary search report |
Effective date: 20240913 |
|
| PLFP | Fee payment |
Year of fee payment: 3 |