FR71164E - Semi conducteur contenant du silicium et méthode de fabrication pour celui-ci - Google Patents

Semi conducteur contenant du silicium et méthode de fabrication pour celui-ci

Info

Publication number
FR71164E
FR71164E FR71164DA FR71164E FR 71164 E FR71164 E FR 71164E FR 71164D A FR71164D A FR 71164DA FR 71164 E FR71164 E FR 71164E
Authority
FR
France
Prior art keywords
manufacturing
containing silicon
method therefor
semiconductor containing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Inventor
Arnold Samuel Epstein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US495082A external-priority patent/US3173765A/en
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Application granted granted Critical
Publication of FR71164E publication Critical patent/FR71164E/fr
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00Bonding of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50Alloying conductive materials with semiconductor bodies

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Die Bonding (AREA)
FR71164D 1955-03-18 1957-04-04 Semi conducteur contenant du silicium et méthode de fabrication pour celui-ci Expired FR71164E (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US495082A US3173765A (en) 1955-03-18 1955-03-18 Method of making crystalline silicon semiconductor material
US576694A US2888782A (en) 1955-03-18 1956-04-06 Mold for fabricating of semiconductor signal translating devices

Publications (1)

Publication Number Publication Date
FR71164E true FR71164E (fr) 1959-10-13

Family

ID=27051639

Family Applications (2)

Application Number Title Priority Date Filing Date
FR1148656D Expired FR1148656A (fr) 1955-03-18 1956-03-15 Semi-conducteur contenant du sillicium et méthode de fabrication pour celui-ci
FR71164D Expired FR71164E (fr) 1955-03-18 1957-04-04 Semi conducteur contenant du silicium et méthode de fabrication pour celui-ci

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR1148656D Expired FR1148656A (fr) 1955-03-18 1956-03-15 Semi-conducteur contenant du sillicium et méthode de fabrication pour celui-ci

Country Status (4)

Country Link
US (1) US2888782A (fr)
BE (1) BE546128A (fr)
FR (2) FR1148656A (fr)
GB (2) GB803830A (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3097976A (en) * 1959-07-06 1963-07-16 Sprague Electric Co Semiconductor alloying process
NL243304A (fr) * 1959-09-12 1900-01-01
US2977257A (en) * 1959-09-17 1961-03-28 Gen Motors Corp Method and apparatus for fabricating junction transistors
US3072504A (en) * 1959-10-20 1963-01-08 Texas Instruments Inc Junction growing technique
US3150013A (en) * 1960-02-17 1964-09-22 Gen Motors Corp Means and method for fabricating semiconductor devices
NL249359A (fr) * 1960-03-12
US3151008A (en) * 1960-09-23 1964-09-29 Sprague Electric Co Method of forming a p-nu junction
US4415401A (en) * 1980-03-10 1983-11-15 Mobil Solar Energy Corporation Control of atmosphere surrounding crystal growth zone
CN108555606A (zh) * 2018-07-21 2018-09-21 陈淑红 一种锂电池镍带切放设备
CN113862775B (zh) * 2021-09-30 2022-06-10 西安奕斯伟材料科技有限公司 一种用于制造掺氮单晶硅的设备及方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1164008A (en) * 1911-03-13 1915-12-14 Westinghouse Electric & Mfg Co Metal-spraying process.
US2234185A (en) * 1937-05-25 1941-03-11 Whitchall Patents Corp Two-tone die casting and method of forming the same
US2266433A (en) * 1939-03-04 1941-12-16 Whitchall Patents Corp Die casting dies
NL180482B (nl) * 1952-08-14 Basf Ag Werkwijze voor het afscheiden en regenereren van rodium bevattende katalysatoren uit bij hydroformyleringen verkregen destillatieresiduen.
US2765245A (en) * 1952-08-22 1956-10-02 Gen Electric Method of making p-n junction semiconductor units
US2756483A (en) * 1953-05-11 1956-07-31 Sylvania Electric Prod Junction forming crucible
US2779877A (en) * 1955-06-17 1957-01-29 Sprague Electric Co Multiple junction transistor unit

Also Published As

Publication number Publication date
GB808463A (en) 1959-02-04
BE546128A (fr) 1900-01-01
FR1148656A (fr) 1957-12-12
GB803830A (en) 1958-11-05
US2888782A (en) 1959-06-02

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