GR1004403B - Υλικα λιθογραφιας με βαση πολυμερη που περιεχουν πολυεδρικες ολιγομερεις σιλεναμισοξανες - Google Patents

Υλικα λιθογραφιας με βαση πολυμερη που περιεχουν πολυεδρικες ολιγομερεις σιλεναμισοξανες

Info

Publication number
GR1004403B
GR1004403B GR20020100253A GR2002100253A GR1004403B GR 1004403 B GR1004403 B GR 1004403B GR 20020100253 A GR20020100253 A GR 20020100253A GR 2002100253 A GR2002100253 A GR 2002100253A GR 1004403 B GR1004403 B GR 1004403B
Authority
GR
Greece
Prior art keywords
polyhedral oligomeric
polymers containing
materials based
groups
oligomeric silsesquioxanes
Prior art date
Application number
GR20020100253A
Other languages
English (en)
Inventor
Original Assignee
"����������", ���������� �����������������
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by "����������", ���������� �����������������, filed Critical "����������", ���������� �����������������
Priority to GR20020100253A priority Critical patent/GR1004403B/el
Priority to PCT/GR2003/000018 priority patent/WO2003102695A1/en
Priority to US10/516,384 priority patent/US20060166128A1/en
Priority to AU2003227994A priority patent/AU2003227994A1/en
Priority to EP03725462A priority patent/EP1552346A1/en
Publication of GR1004403B publication Critical patent/GR1004403B/el

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Silicon Polymers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)

Abstract

εριγράφονται υλικά κατάλληλα για λιθογραφία στην περιοχή του υπεριώδους, περιλαμβανομένης της περιοχής των 157 nm και της περιοχής του άπω υπεριώδους, και σε ηλεκτρονική δέσμη. Τα υλικά αυτά βασίζονται σε νέα ομοπολυμερή και συμπολυμερή που χαρακτηρίζονται από την παρουσία πολυεδρικών ολιγομερών σιλεναμιξανών στο μόριο τους και είναι κατάλληλα για λιθογραφία τόσο απλής όσο και διπλής (διστρωματικής) επίστρωσης. Οι άλκυλο υποκαταστάτες των σιλεναμισοξανών που δεν συνδέονται με τη βασική αλυσίδα του πολυμερούς είναι αιθυλικές ομάδες ή άλλες ομάδες παρεμφερούς ή μικρότερου μεγέθους για την αντιμετώπιση προβλημάτων μεταφοράς σχήματος,τραχύτητας, ή/και μεγάλης απορρόφησης στα 157 nm τα οποία συναντώνται όταν οι υποκαταστάτες αυτοί είναι κυκλοπεντυλικοί. ΰ
GR20020100253A 2002-05-30 2002-05-30 Υλικα λιθογραφιας με βαση πολυμερη που περιεχουν πολυεδρικες ολιγομερεις σιλεναμισοξανες GR1004403B (el)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GR20020100253A GR1004403B (el) 2002-05-30 2002-05-30 Υλικα λιθογραφιας με βαση πολυμερη που περιεχουν πολυεδρικες ολιγομερεις σιλεναμισοξανες
PCT/GR2003/000018 WO2003102695A1 (en) 2002-05-30 2003-05-30 Lithographic materials based on polymers containing polyhedral oligomeric silsesquioxanes
US10/516,384 US20060166128A1 (en) 2002-05-30 2003-05-30 Lithographic materials based on polymers containing polyhedral oligomeric silsesquioxanes
AU2003227994A AU2003227994A1 (en) 2002-05-30 2003-05-30 Lithographic materials based on polymers containing polyhedral oligomeric silsesquioxanes
EP03725462A EP1552346A1 (en) 2002-05-30 2003-05-30 Lithographic materials based on polymers containing polyhedral oligomeric silsesquioxanes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GR20020100253A GR1004403B (el) 2002-05-30 2002-05-30 Υλικα λιθογραφιας με βαση πολυμερη που περιεχουν πολυεδρικες ολιγομερεις σιλεναμισοξανες

Publications (1)

Publication Number Publication Date
GR1004403B true GR1004403B (el) 2003-12-19

Family

ID=29596039

Family Applications (1)

Application Number Title Priority Date Filing Date
GR20020100253A GR1004403B (el) 2002-05-30 2002-05-30 Υλικα λιθογραφιας με βαση πολυμερη που περιεχουν πολυεδρικες ολιγομερεις σιλεναμισοξανες

Country Status (5)

Country Link
US (1) US20060166128A1 (el)
EP (1) EP1552346A1 (el)
AU (1) AU2003227994A1 (el)
GR (1) GR1004403B (el)
WO (1) WO2003102695A1 (el)

Families Citing this family (14)

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US7915369B2 (en) * 2004-12-07 2011-03-29 Panasonic Electric Works Co., Ltd. Ultraviolet transmissive polyhedral silsesquioxane polymers
KR100740611B1 (ko) * 2005-10-12 2007-07-18 삼성전자주식회사 탑 코팅 막용 고분자, 탑 코팅 용액 조성물 및 이를 이용한이머젼 리소그라피 공정
KR101280478B1 (ko) * 2005-10-26 2013-07-15 주식회사 동진쎄미켐 감광성 수지 조성물
JP4734111B2 (ja) * 2005-12-15 2011-07-27 ルネサスエレクトロニクス株式会社 多層レジスト膜のパターニング方法および半導体装置の製造方法
US7822064B2 (en) * 2006-10-02 2010-10-26 Cisco Technology, Inc. Backhaul-level call admission control for a wireless mesh network
US7560222B2 (en) * 2006-10-31 2009-07-14 International Business Machines Corporation Si-containing polymers for nano-pattern device fabrication
US7868198B2 (en) 2007-06-15 2011-01-11 Laine Richard M Multi-functional silsesquioxanes for novel coating applications
US20110111178A1 (en) * 2008-04-02 2011-05-12 The Trustees of Columbia University in theCity of Structures having an adjusted mechanical property
US20150125957A1 (en) 2008-04-02 2015-05-07 Manus J.P. Biggs Cellular response to surface with nanoscale heterogeneous rigidity
CN101963757B (zh) * 2009-07-25 2012-11-21 比亚迪股份有限公司 一种有机硅改性碱溶性光敏树脂及其制备方法和一种油墨组合物
US8268399B2 (en) * 2009-08-19 2012-09-18 Xerox Corporation Polyhedral oligomeric silsesquioxane image conditioning coating
WO2012087244A1 (en) * 2010-12-21 2012-06-28 Agency For Science, Technology And Research Copolymer, composition and method for modifying rheology
CN103755847B (zh) 2013-12-31 2015-09-16 京东方科技集团股份有限公司 聚丙烯酸酯分散剂、颜料分散液、彩色光刻胶、彩膜基板和显示装置
CN116102842B (zh) * 2022-12-29 2024-06-11 重庆普利特新材料有限公司 一种可激光镭雕和v-0级阻燃聚丙烯复合材料及其制备方法

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US20010018486A1 (en) * 1996-09-27 2001-08-30 Joseph D. Lichtenhan Preceramic additives as fire retardants for plastics
US6391471B1 (en) * 1999-03-29 2002-05-21 Kabushiki Kaisha Toshiba Functional device and multi-component multi-phase type polymeric shaped material
WO2002050144A2 (en) * 2000-12-19 2002-06-27 Bausch & Lomb Incorporated Polymeric biomaterials containing silsesquixane monomers
WO2002073308A1 (en) * 2001-03-12 2002-09-19 University Of North Carolina At Charlotte High resolution resists for next generation lithographies
US20030022102A1 (en) * 2001-03-28 2003-01-30 Toshiro Hiraoka Method of manufacturing composite member, photosensitive composition, porous base material, insulating body and composite member

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US5484867A (en) * 1993-08-12 1996-01-16 The University Of Dayton Process for preparation of polyhedral oligomeric silsesquioxanes and systhesis of polymers containing polyhedral oligomeric silsesqioxane group segments
US6187505B1 (en) * 1999-02-02 2001-02-13 International Business Machines Corporation Radiation sensitive silicon-containing resists
JP3940546B2 (ja) * 1999-06-07 2007-07-04 株式会社東芝 パターン形成方法およびパターン形成材料
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Patent Citations (5)

* Cited by examiner, † Cited by third party
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US20010018486A1 (en) * 1996-09-27 2001-08-30 Joseph D. Lichtenhan Preceramic additives as fire retardants for plastics
US6391471B1 (en) * 1999-03-29 2002-05-21 Kabushiki Kaisha Toshiba Functional device and multi-component multi-phase type polymeric shaped material
WO2002050144A2 (en) * 2000-12-19 2002-06-27 Bausch & Lomb Incorporated Polymeric biomaterials containing silsesquixane monomers
WO2002073308A1 (en) * 2001-03-12 2002-09-19 University Of North Carolina At Charlotte High resolution resists for next generation lithographies
US20030022102A1 (en) * 2001-03-28 2003-01-30 Toshiro Hiraoka Method of manufacturing composite member, photosensitive composition, porous base material, insulating body and composite member

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
WU H ET AL: "Incorporation of polyhedral oligosilsesquioxane in chemically amplified resists to improve their reactive ion etching resistance", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B: MICROELECTRONICS PROCESSING AND PHENOMENA., vol. 19, no. 3, 2001, AMERICAN VACUUM SOCIETY, NEW YORK, NY., US, pages 851 - 855, XP002234173, ISSN: 0734-211X *
WU H ET AL: "Novel CA Resists with Photoacid Generator in Polymer Chain", PROCEEDINGS OF THE SPIE, vol. 4345, 2001, SPIE, BELLINGHAM, VA, US, pages 521 - 527, XP002234175 *
WU H ET AL: "Novel Positive-Tone Chemically Amplified Resists with Photoacid Generator in the Polymeric Chains", ADVANCED MATERIALS., vol. 13, no. 9, 2001, VCH VERLAGSGESELLSCHAFT, WEINHEIM, DE, pages 670 - 672, XP002234174, ISSN: 0935-9648 *

Also Published As

Publication number Publication date
EP1552346A1 (en) 2005-07-13
WO2003102695A1 (en) 2003-12-11
AU2003227994A1 (en) 2003-12-19
US20060166128A1 (en) 2006-07-27

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