HK5396A - A high efficiency UHF linear power amplifier - Google Patents
A high efficiency UHF linear power amplifier Download PDFInfo
- Publication number
- HK5396A HK5396A HK5396A HK5396A HK5396A HK 5396 A HK5396 A HK 5396A HK 5396 A HK5396 A HK 5396A HK 5396 A HK5396 A HK 5396A HK 5396 A HK5396 A HK 5396A
- Authority
- HK
- Hong Kong
- Prior art keywords
- signal
- envelope
- output
- circuit
- radio frequency
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0216—Continuous control
- H03F1/0222—Continuous control by using a signal derived from the input signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/15—Indexing scheme relating to amplifiers the supply or bias voltage or current at the drain side of a FET being continuously controlled by a controlling signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/192—A hybrid coupler being used at the input of an amplifier circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/204—A hybrid coupler being used at the output of an amplifier circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/228—A measuring circuit being coupled to the input of an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/267—A capacitor based passive circuit, e.g. filter, being used in an amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/351—Pulse width modulation being used in an amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/393—A measuring circuit being coupled to the output of an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/99—A diode as rectifier being used as a detecting circuit in an amplifying circuit
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Claims (11)
- Schaltung zum Verstärken eines Hochfrequenzsignals mit einer veränderlichen Hüllkurve, mit einer Verstärkungsvorrichtung (110) mit ersten, zweiten und Steuerelektroden, einer Versorgungsspannungsquelle (VCC), Mitteln (115) zum Ankoppeln der ersten Elektrode der Vestärkungsvorrichtung an einen Ausgang, Mitteln (120) zum Bilden eines Hüllkurvenveränderungssignals aus dem Hochfrequenzsignal, Modulationsmitteln (140, 145) mit einem Eingangsanschluß und einem Paar von Ausgangsanschlüssen, die zum Modulieren des Signals an der ersten Elektrode der Verstärkungsvorrichtung zwischen die Versorgungsspannungsquelle und die erste Elektrode der Verstärkungsvorrichtung gekoppelt sind, auf das an den Ausgang angekoppelte Hochfrequenzsignal reagierenden Mitteln (125) zum Bilden eines den Hüllkurvenveränderungen des Hochfrequenzsignals am Ausgang entsprechenden Signals, auf das Hüllkurvenveränderungssignal und das den Hüllkurvenveränderungen des Hochfrequenzsignals am Ausgang entsprechende Signal reagierenden Mitteln (130) zum Erzeugen eines die Differenz zwischen diesen repräsentierenden Signals, und Mitteln (135) zum Anlegen des Differenzsignals an den Eingangsanschluß der Modulationsmittel zur Verringerung der Verzerrung in den Hüllkurvenveränderungen am Ausgang, gekennzeichnet durch eine an den Ausgang gekoppelte Belastungsvorrichtung (180) und Mittel (105) zum Bilden eines Hochfrequenzsignals mit konstanter Amplitude und zum Ankoppeln des Hochfrequenzsignals mit konstanter Amplitude an die Steuerelektrode der Verstärkungsvorrichtung.
- Schaltung nach Anspruch 1, wobei die Verstärkungsvorrichtung (110) eine nichtlineare Verstärkungsvorrichtung mit ersten, zweiten und Steuerelektroden ist.
- Schaltung nach Anspruch 2, wobei die nichtlineare Verstärkungsvorrichtung (110) eine Verstärkervorrichtung mit C-Verstärkung mit einer Basis, einem Emitter und einem Kollektor ist.
- Schaltung nach Anspruch 3, wobei die Modulationsmittel (140, 145) einen Impulsbreitenmodulator (340) umfassen.
- Schaltung nach einem der vorhergehenden Ansprüche, wobei das Hochfrequenzsignal einen im Winkel veränderlichen Träger besitzt und die Mittel zum Bilden eines Hochfrequenzsignals mit konstanter Amplitude zum Ankoppeln des im Winkel veränderlichen Trägers an die Steuerelektrode der Verstärkungsvorrichtung (310) dienen.
- Schaltung nach Anspruch 5, wobei der im Winkel veränderliche Träger ein frequenzveränderlicher Träger ist.
- Schaltung nach Anspruch 6, wobei der frequenzveränderliche Träger eine Mehrzahl von frequenzveränderlichen Signalen umfaßt.
- Schaltung nach Anspruch 5, wobei die Winkelveränderungen des Trägers Phasenveränderungen sind.
- Schaltung nach Anspruch 8, wobei die Phasenveränderungen eine M-ere Differenzphasenumtastungsmodulation mit vordefinierten Phasenverschiebungen umfassen und die Hüllkurvenveränderungen Hüllkurvenveränderungen zwischen den vordefinierten Phasenverschiebungen der MDPSK-Modulation sind.
- Schaltung nach Anspruch 1, wobei die Modulationsmittel (140, 145) einen Impulsbreitenmodulator (140) und zwischen den Impulsbreitenmodulator und die erste Elektrode gekoppelte Filtermittel (145) zum Entfernen von Hochfrequenzteilen der Impulsbreitenmodulatorausgabe umfassen.
- Schaltung nach einem der vorhergehenden Ansprüche, wobei die Mittel (120) zum Bilden des Hüllkurvenveränderungssignals eine erste Diode (570) und Mittel (574, 576) zum Vorspannen der ersten Diode umfassen, wobei die Mittel (125) zum Bilden des den Hüllkurvenveränderungen des Hochfrequenzsignals am Ausgang entsprechenden Signals eine zweite Diode (560) und Mittel (564, 567) zum Vorspannen der zweiten Diode umfassen, und die Mittel (564, 567, 574, 576) zum Vorspannen der ersten und zweiten Dioden (560, 570) so eingestellt sind, daß sie die ersten und zweiten Dioden (560, 570) auf im wesentlichen gleichartigen Betriebseigenschaften halten.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/316,891 US5105164A (en) | 1989-02-28 | 1989-02-28 | High efficiency uhf linear power amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK5396A true HK5396A (en) | 1996-01-19 |
Family
ID=23231154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK5396A HK5396A (en) | 1989-02-28 | 1996-01-11 | A high efficiency UHF linear power amplifier |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5105164A (de) |
| EP (1) | EP0385641B1 (de) |
| JP (1) | JPH07101821B2 (de) |
| KR (1) | KR0135750B1 (de) |
| CA (1) | CA2006683C (de) |
| DE (1) | DE69015663T2 (de) |
| FI (1) | FI97575C (de) |
| HK (1) | HK5396A (de) |
| SG (1) | SG30995G (de) |
Families Citing this family (72)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5668837A (en) * | 1993-10-14 | 1997-09-16 | Ericsson Inc. | Dual-mode radio receiver for receiving narrowband and wideband signals |
| DE4497810B4 (de) * | 1993-10-14 | 2009-10-08 | Ericsson - Ge Mobile Communications Inc. | Funkempfänder und Verfahren zum Demodulieren sowohl von breitbandigen frequenzmodulieten Signalen, als auch von schmalbandigen frequenzmodulierten Signalen |
| US5365187A (en) * | 1993-10-29 | 1994-11-15 | Hewlett-Packard Company | Power amplifier utilizing the vector addition of two constant envelope carriers |
| GB2301751B (en) | 1995-06-02 | 2000-02-09 | Dsc Communications | Control message transmission in telecommunications systems |
| US5732333A (en) * | 1996-02-14 | 1998-03-24 | Glenayre Electronics, Inc. | Linear transmitter using predistortion |
| US5847602A (en) * | 1997-03-03 | 1998-12-08 | Hewlett-Packard Company | Method and apparatus for linearizing an efficient class D/E power amplifier using delta modulation |
| US5886572A (en) * | 1997-07-25 | 1999-03-23 | Motorola, Inc. | Method and apparatus for reducing distortion in a power amplifier |
| US6141541A (en) * | 1997-12-31 | 2000-10-31 | Motorola, Inc. | Method, device, phone and base station for providing envelope-following for variable envelope radio frequency signals |
| US6078628A (en) * | 1998-03-13 | 2000-06-20 | Conexant Systems, Inc. | Non-linear constant envelope modulator and transmit architecture |
| US6133792A (en) * | 1998-09-17 | 2000-10-17 | Telefonakteibolaget Lm Ericsson | Method and apparatus for preventing power amplifier saturation |
| FI105609B (fi) | 1998-10-27 | 2000-09-15 | Nokia Mobile Phones Ltd | Menetelmä ja järjestely lähetyssignaalin muodostamiseksi |
| EP1017162A3 (de) * | 1998-12-30 | 2003-07-16 | Texas Instruments Incorporated | Verstärkerschaltung mit Rückkopplungsschleife zur Verminderung der Verzerrung |
| EP1028522A1 (de) * | 1999-02-10 | 2000-08-16 | Semiconductor Ideas to The Market (ItoM) BV | Übertragungsvorrichtung |
| US6590940B1 (en) * | 1999-05-17 | 2003-07-08 | Ericsson Inc. | Power modulation systems and methods that separately amplify low and high frequency portions of an amplitude waveform |
| US6252455B1 (en) * | 1999-10-07 | 2001-06-26 | Motorola, Inc. | Method and apparatus for efficient signal amplification |
| EP1096670A3 (de) * | 1999-10-08 | 2003-10-29 | M/A-Com Eurotec | System und Verfahren für digitale Informationsübertragung unter Verwendung einer verwürfelten Delta-Modulation |
| US6813319B1 (en) * | 1999-10-08 | 2004-11-02 | M/A-Com Eurotec | System and method for transmitting digital information using interleaved delta modulation |
| GB2356756B (en) * | 1999-11-25 | 2004-08-11 | Ericsson Telefon Ab L M | Power amplifiers |
| GB2359681B (en) | 2000-02-25 | 2004-03-10 | Wireless Systems Int Ltd | Switched amplifier |
| JP2002009556A (ja) * | 2000-06-16 | 2002-01-11 | Sony Corp | 歪補償装置及び歪補償方法 |
| US8149062B2 (en) | 2000-09-12 | 2012-04-03 | Black Sand Technologies, Inc. | Power amplifier circuitry having inductive networks |
| US6549071B1 (en) | 2000-09-12 | 2003-04-15 | Silicon Laboratories, Inc. | Power amplifier circuitry and method using an inductance coupled to power amplifier switching devices |
| US7796969B2 (en) | 2001-10-10 | 2010-09-14 | Peregrine Semiconductor Corporation | Symmetrically and asymmetrically stacked transistor group RF switch |
| US6804502B2 (en) | 2001-10-10 | 2004-10-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
| US7058369B1 (en) | 2001-11-21 | 2006-06-06 | Pmc-Sierra Inc. | Constant gain digital predistortion controller for linearization of non-linear amplifiers |
| US6794937B1 (en) | 2001-11-30 | 2004-09-21 | Alcatel | Predistortion linearizer and method for linearizing a nonlinear device |
| US6674335B1 (en) * | 2002-06-28 | 2004-01-06 | Qualcomm Incorporated | Blind linearization using cross-modulation |
| ATE551773T1 (de) * | 2003-02-20 | 2012-04-15 | Sony Ericsson Mobile Comm Ab | Effizienter modulation von hochfrequenzsignalen |
| US7719343B2 (en) | 2003-09-08 | 2010-05-18 | Peregrine Semiconductor Corporation | Low noise charge pump method and apparatus |
| KR20050069152A (ko) * | 2003-12-31 | 2005-07-05 | 동부아남반도체 주식회사 | 횡형 디모스 트랜지스터 소자 |
| US7248120B2 (en) * | 2004-06-23 | 2007-07-24 | Peregrine Semiconductor Corporation | Stacked transistor method and apparatus |
| JP4659826B2 (ja) | 2004-06-23 | 2011-03-30 | ペレグリン セミコンダクター コーポレーション | Rfフロントエンド集積回路 |
| KR20070043002A (ko) * | 2004-08-12 | 2007-04-24 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 듀얼모드 오디오 증폭기 |
| GB2417626B (en) * | 2004-08-26 | 2007-12-27 | Renesas Tech Corp | Transmitter and radio communication terminal using the same |
| US7910993B2 (en) | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
| US8742502B2 (en) | 2005-07-11 | 2014-06-03 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| US7890891B2 (en) | 2005-07-11 | 2011-02-15 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| USRE48965E1 (en) | 2005-07-11 | 2022-03-08 | Psemi Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US20080076371A1 (en) | 2005-07-11 | 2008-03-27 | Alexander Dribinsky | Circuit and method for controlling charge injection in radio frequency switches |
| US9653601B2 (en) | 2005-07-11 | 2017-05-16 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| JP4629524B2 (ja) * | 2005-07-21 | 2011-02-09 | フォスター電機株式会社 | D級アンプ |
| US7773695B2 (en) | 2005-08-19 | 2010-08-10 | Dominic Kotab | Amplitude modulator |
| JP4960449B2 (ja) * | 2006-06-27 | 2012-06-27 | テレフオンアクチーボラゲット エル エム エリクソン(パブル) | スイッチモード電力増幅 |
| EP1914886A1 (de) * | 2006-10-19 | 2008-04-23 | Alcatel Lucent | Mehrbandleistungsverstärker |
| US7960772B2 (en) | 2007-04-26 | 2011-06-14 | Peregrine Semiconductor Corporation | Tuning capacitance to enhance FET stack voltage withstand |
| JP5417346B2 (ja) | 2008-02-28 | 2014-02-12 | ペレグリン セミコンダクター コーポレーション | 集積回路素子内でキャパシタをデジタル処理で同調するときに用いられる方法及び装置 |
| EP2330735A3 (de) | 2008-07-18 | 2012-04-04 | Peregrine Semiconductor Corporation | Transkonduktanz-Operationsverstärker |
| US9660590B2 (en) | 2008-07-18 | 2017-05-23 | Peregrine Semiconductor Corporation | Low-noise high efficiency bias generation circuits and method |
| US8723260B1 (en) | 2009-03-12 | 2014-05-13 | Rf Micro Devices, Inc. | Semiconductor radio frequency switch with body contact |
| US9166533B2 (en) | 2009-07-30 | 2015-10-20 | Qualcomm Incorporated | Bias current monitor and control mechanism for amplifiers |
| KR101213778B1 (ko) | 2011-01-11 | 2012-12-18 | (주)펄서스 테크놀러지 | 노이즈 보상을 위한 전압 가변형 디지털 오디오 증폭 장치 및 그 방법 |
| US8686787B2 (en) | 2011-05-11 | 2014-04-01 | Peregrine Semiconductor Corporation | High voltage ring pump with inverter stages and voltage boosting stages |
| US9264053B2 (en) | 2011-01-18 | 2016-02-16 | Peregrine Semiconductor Corporation | Variable frequency charge pump |
| US8310308B1 (en) * | 2011-05-31 | 2012-11-13 | Texas Instruments Incorporated | Wide bandwidth class C amplifier with common-mode feedback |
| EP2654203A1 (de) * | 2012-04-20 | 2013-10-23 | Alcatel-Lucent | Verstärkerschaltung, Verfahren und Computerprogramm zur Verstärkung eines modulierten Funkfrequenzsignals |
| US8829967B2 (en) * | 2012-06-27 | 2014-09-09 | Triquint Semiconductor, Inc. | Body-contacted partially depleted silicon on insulator transistor |
| US8729952B2 (en) | 2012-08-16 | 2014-05-20 | Triquint Semiconductor, Inc. | Switching device with non-negative biasing |
| US9590674B2 (en) | 2012-12-14 | 2017-03-07 | Peregrine Semiconductor Corporation | Semiconductor devices with switchable ground-body connection |
| US8847672B2 (en) | 2013-01-15 | 2014-09-30 | Triquint Semiconductor, Inc. | Switching device with resistive divider |
| US9214932B2 (en) | 2013-02-11 | 2015-12-15 | Triquint Semiconductor, Inc. | Body-biased switching device |
| US8977217B1 (en) | 2013-02-20 | 2015-03-10 | Triquint Semiconductor, Inc. | Switching device with negative bias circuit |
| US8923782B1 (en) | 2013-02-20 | 2014-12-30 | Triquint Semiconductor, Inc. | Switching device with diode-biased field-effect transistor (FET) |
| US9203396B1 (en) | 2013-02-22 | 2015-12-01 | Triquint Semiconductor, Inc. | Radio frequency switch device with source-follower |
| US20150236748A1 (en) | 2013-03-14 | 2015-08-20 | Peregrine Semiconductor Corporation | Devices and Methods for Duplexer Loss Reduction |
| US9406695B2 (en) | 2013-11-20 | 2016-08-02 | Peregrine Semiconductor Corporation | Circuit and method for improving ESD tolerance and switching speed |
| US9379698B2 (en) | 2014-02-04 | 2016-06-28 | Triquint Semiconductor, Inc. | Field effect transistor switching circuit |
| US9831857B2 (en) | 2015-03-11 | 2017-11-28 | Peregrine Semiconductor Corporation | Power splitter with programmable output phase shift |
| US9948281B2 (en) | 2016-09-02 | 2018-04-17 | Peregrine Semiconductor Corporation | Positive logic digitally tunable capacitor |
| US10886911B2 (en) | 2018-03-28 | 2021-01-05 | Psemi Corporation | Stacked FET switch bias ladders |
| US10236872B1 (en) | 2018-03-28 | 2019-03-19 | Psemi Corporation | AC coupling modules for bias ladders |
| US10505530B2 (en) | 2018-03-28 | 2019-12-10 | Psemi Corporation | Positive logic switch with selectable DC blocking circuit |
| US11476849B2 (en) | 2020-01-06 | 2022-10-18 | Psemi Corporation | High power positive logic switch |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3486128A (en) * | 1968-02-07 | 1969-12-23 | Us Army | Power amplifier for amplitude modulated transmitter |
| US3900823A (en) * | 1973-03-28 | 1975-08-19 | Nathan O Sokal | Amplifying and processing apparatus for modulated carrier signals |
| US4276514A (en) * | 1979-07-09 | 1981-06-30 | Trw Inc. | Wideband, phase compensated amplifier with negative feedback of distortion components in the output signal |
| JPS6025310A (ja) * | 1983-07-22 | 1985-02-08 | Fujitsu Ltd | Ssb多重無線装置用fet直線電力増幅装置 |
| US4706262A (en) * | 1984-03-30 | 1987-11-10 | Nec Corporation | FSK or FM burst signal generating apparatus |
| US4574248A (en) * | 1984-05-07 | 1986-03-04 | Rockwell International Corporation | RF Power amplifier for use with VHF transceivers |
| GB2163311A (en) * | 1984-08-17 | 1986-02-19 | Philips Electronic Associated | Bipolar transistor rf power amplifier |
| US4776036A (en) * | 1986-02-25 | 1988-10-04 | Varian Associates, Inc. | RF-AM transmitter with pulse width modulator |
-
1989
- 1989-02-28 US US07/316,891 patent/US5105164A/en not_active Expired - Lifetime
- 1989-12-27 CA CA002006683A patent/CA2006683C/en not_active Expired - Lifetime
-
1990
- 1990-02-21 EP EP90301848A patent/EP0385641B1/de not_active Expired - Lifetime
- 1990-02-21 DE DE69015663T patent/DE69015663T2/de not_active Expired - Fee Related
- 1990-02-26 JP JP2044294A patent/JPH07101821B2/ja not_active Expired - Fee Related
- 1990-02-27 KR KR1019900002560A patent/KR0135750B1/ko not_active Expired - Lifetime
- 1990-02-27 FI FI900989A patent/FI97575C/fi not_active IP Right Cessation
-
1995
- 1995-02-22 SG SG30995A patent/SG30995G/en unknown
-
1996
- 1996-01-11 HK HK5396A patent/HK5396A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR0135750B1 (ko) | 1998-05-15 |
| KR900013704A (ko) | 1990-09-06 |
| EP0385641A3 (de) | 1991-02-27 |
| DE69015663D1 (de) | 1995-02-16 |
| SG30995G (en) | 1995-08-18 |
| FI97575B (fi) | 1996-09-30 |
| JPH07101821B2 (ja) | 1995-11-01 |
| CA2006683C (en) | 1995-06-20 |
| JPH02291704A (ja) | 1990-12-03 |
| FI97575C (fi) | 1997-01-10 |
| EP0385641A2 (de) | 1990-09-05 |
| US5105164A (en) | 1992-04-14 |
| FI900989A0 (fi) | 1990-02-27 |
| EP0385641B1 (de) | 1995-01-04 |
| DE69015663T2 (de) | 1995-05-18 |
| CA2006683A1 (en) | 1990-08-31 |
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