HK5396A - A high efficiency UHF linear power amplifier - Google Patents

A high efficiency UHF linear power amplifier Download PDF

Info

Publication number
HK5396A
HK5396A HK5396A HK5396A HK5396A HK 5396 A HK5396 A HK 5396A HK 5396 A HK5396 A HK 5396A HK 5396 A HK5396 A HK 5396A HK 5396 A HK5396 A HK 5396A
Authority
HK
Hong Kong
Prior art keywords
signal
envelope
output
circuit
radio frequency
Prior art date
Application number
HK5396A
Other languages
German (de)
English (en)
Inventor
Edward Fisher Reed
Joseph Koch Kichael
Original Assignee
At&T Corp.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At&T Corp. filed Critical At&T Corp.
Publication of HK5396A publication Critical patent/HK5396A/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217Class D power amplifiers; Switching amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216Continuous control
    • H03F1/0222Continuous control by using a signal derived from the input signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32Modifications of amplifiers to reduce non-linear distortion
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/15Indexing scheme relating to amplifiers the supply or bias voltage or current at the drain side of a FET being continuously controlled by a controlling signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/192A hybrid coupler being used at the input of an amplifier circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/204A hybrid coupler being used at the output of an amplifier circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/222A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/228A measuring circuit being coupled to the input of an amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/267A capacitor based passive circuit, e.g. filter, being used in an amplifying circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/351Pulse width modulation being used in an amplifying circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/387A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/393A measuring circuit being coupled to the output of an amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/75Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/99A diode as rectifier being used as a detecting circuit in an amplifying circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)

Claims (11)

  1. Circuit pour amplifier un signal radioélectrique ayant une enveloppe variable, comprenant un dispositif d'amplification (110) des première, deuxième électrodes et une électrode de commande, une source de tension d'alimentation (VCC), un moyen (115) pour coupler la première électrode du dispositif d'amplification à une sortie, un moyen (120) pour former un signal de variation d'enveloppe à partir du signal radioélectrique, un moyen de modulation (140,145) comprenant une borne d'entrée et une paire de bornes de sortie couplées entre la source de tension d'alimentation et la première électrode du dispositif d'amplification pour moduler le signal sur la première électrode du dispositif d'amplification, un moyen (125) sensible au signal radioélectrique couplé à la sortie pour former un signal correspondant aux variations d'enveloppe du signal radioélectrique à la sortie, un moyen (130) sensible au signal de variation d'enveloppe et au signal correspondant aux variations d'enveloppe du signal radioélectrique à la sortie pour produire un signal représentatif de la différence entre eux, et un moyen (135) pour appliquer le signal de différence à la borne d'entrée du moyen de modulation pour réduire la distorsion des variations d'enveloppe à la sortie, et CARACTERISE PAR un dispositif de chargement (180) couplé à la sortie, et un moyen (105) pour former un signal radioélectrique d'amplitude constante et pour coupler le signal radioélectrique d'amplitude constante à l'électrode de commande du dispositif d'amplification.
  2. Circuit selon la revendication 1, dans lequel le dispositif d'amplification (110) est un dispositif d'amplification non linéaire ayant des première, seconde électrodes et une électrode de commande.
  3. Circuit selon la revendication 2, dans lequel le dispositif d'amplification non linéaire (110) est un dispositif amplificateur fonctionnant en classe C ayant une base, un émetteur et un collecteur.
  4. Circuit selon la revendication 3, dans lequel le moyen de modulation (140,145) comprend un modulateur de largeur d'impulsion (340).
  5. Circuit selon l'une quelconque des revendications précédentes, dans lequel le signal radioélectrique a une porteuse variant en angle, et le moyen pour former un signal radioélectrique d'amplitude constante sert à coupler la porteuse variant en angle à l'électrode de commande du dispositif d'amplification (310).
  6. Circuit selon la revendication 5, dans lequel la porteuse variant en angle est une porteuse variant en fréquence.
  7. Circuit selon la revendication 6, dans lequel la porteuse variant en fréquence comprend une pluralité de signaux variant en fréquence.
  8. Circuit selon la revendication 5, dans lequel les variations d'angle de porteuse sont des variations de phase.
  9. Circuit selon la revendication 8, dans lequel les variations de phase comprennent une modulation par déplacement de phase différentiel M-aire ayant des déphasages prédéfinis et les variations d'enveloppe sont des variations d'enveloppe entre les déplacements de phase prédéfinis de la modulation MDPDM.
  10. Circuit selon la revendication 1, dans lequel le moyen de modulation (140,145) comprend un modulateur de largeur d'impulsion (140) et un moyen de filtre (145) couplé entre le modulateur de largeur d'impulsion et la première électrode pour supprimer les parties haute fréquence de la sortie du modulateur de largeur d'impulsion.
  11. Circuit selon l'une quelconque des revendications précédentes, dans lequel le moyen (120) pour former le signal de variation d'enveloppe comprend une première diode (570) et un moyen (574,576) pour polariser la première diode, le moyen (125) pour former le signal correspondant aux variations d'enveloppe du signal radioélectrique à la sortie comprend une seconde diode (560) et un moyen (564,567) pour polariser la seconde diode, et les moyens (564,567,574,576) pour polariser les première et seconde diodes (560,570) sont réglés pour maintenir les première et seconde diodes (560,570) à des caractéristiques de fonctionnement substantiellement semblables.
HK5396A 1989-02-28 1996-01-11 A high efficiency UHF linear power amplifier HK5396A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/316,891 US5105164A (en) 1989-02-28 1989-02-28 High efficiency uhf linear power amplifier

Publications (1)

Publication Number Publication Date
HK5396A true HK5396A (en) 1996-01-19

Family

ID=23231154

Family Applications (1)

Application Number Title Priority Date Filing Date
HK5396A HK5396A (en) 1989-02-28 1996-01-11 A high efficiency UHF linear power amplifier

Country Status (9)

Country Link
US (1) US5105164A (fr)
EP (1) EP0385641B1 (fr)
JP (1) JPH07101821B2 (fr)
KR (1) KR0135750B1 (fr)
CA (1) CA2006683C (fr)
DE (1) DE69015663T2 (fr)
FI (1) FI97575C (fr)
HK (1) HK5396A (fr)
SG (1) SG30995G (fr)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5668837A (en) * 1993-10-14 1997-09-16 Ericsson Inc. Dual-mode radio receiver for receiving narrowband and wideband signals
DE4497810B4 (de) * 1993-10-14 2009-10-08 Ericsson - Ge Mobile Communications Inc. Funkempfänder und Verfahren zum Demodulieren sowohl von breitbandigen frequenzmodulieten Signalen, als auch von schmalbandigen frequenzmodulierten Signalen
US5365187A (en) * 1993-10-29 1994-11-15 Hewlett-Packard Company Power amplifier utilizing the vector addition of two constant envelope carriers
GB2301751B (en) 1995-06-02 2000-02-09 Dsc Communications Control message transmission in telecommunications systems
US5732333A (en) * 1996-02-14 1998-03-24 Glenayre Electronics, Inc. Linear transmitter using predistortion
US5847602A (en) * 1997-03-03 1998-12-08 Hewlett-Packard Company Method and apparatus for linearizing an efficient class D/E power amplifier using delta modulation
US5886572A (en) * 1997-07-25 1999-03-23 Motorola, Inc. Method and apparatus for reducing distortion in a power amplifier
US6141541A (en) * 1997-12-31 2000-10-31 Motorola, Inc. Method, device, phone and base station for providing envelope-following for variable envelope radio frequency signals
US6078628A (en) * 1998-03-13 2000-06-20 Conexant Systems, Inc. Non-linear constant envelope modulator and transmit architecture
US6133792A (en) * 1998-09-17 2000-10-17 Telefonakteibolaget Lm Ericsson Method and apparatus for preventing power amplifier saturation
FI105609B (fi) 1998-10-27 2000-09-15 Nokia Mobile Phones Ltd Menetelmä ja järjestely lähetyssignaalin muodostamiseksi
EP1017162A3 (fr) * 1998-12-30 2003-07-16 Texas Instruments Incorporated Circuit amplificateur à boucle de contre-réaction négative pour réduire la distortion
EP1028522A1 (fr) * 1999-02-10 2000-08-16 Semiconductor Ideas to The Market (ItoM) BV Dispositif de communication
US6590940B1 (en) * 1999-05-17 2003-07-08 Ericsson Inc. Power modulation systems and methods that separately amplify low and high frequency portions of an amplitude waveform
US6252455B1 (en) * 1999-10-07 2001-06-26 Motorola, Inc. Method and apparatus for efficient signal amplification
EP1096670A3 (fr) * 1999-10-08 2003-10-29 M/A-Com Eurotec Système et procédé de transmission des informations numériques utilisant la modulation delta entrelacée
US6813319B1 (en) * 1999-10-08 2004-11-02 M/A-Com Eurotec System and method for transmitting digital information using interleaved delta modulation
GB2356756B (en) * 1999-11-25 2004-08-11 Ericsson Telefon Ab L M Power amplifiers
GB2359681B (en) 2000-02-25 2004-03-10 Wireless Systems Int Ltd Switched amplifier
JP2002009556A (ja) * 2000-06-16 2002-01-11 Sony Corp 歪補償装置及び歪補償方法
US8149062B2 (en) 2000-09-12 2012-04-03 Black Sand Technologies, Inc. Power amplifier circuitry having inductive networks
US6549071B1 (en) 2000-09-12 2003-04-15 Silicon Laboratories, Inc. Power amplifier circuitry and method using an inductance coupled to power amplifier switching devices
US7796969B2 (en) 2001-10-10 2010-09-14 Peregrine Semiconductor Corporation Symmetrically and asymmetrically stacked transistor group RF switch
US6804502B2 (en) 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US7058369B1 (en) 2001-11-21 2006-06-06 Pmc-Sierra Inc. Constant gain digital predistortion controller for linearization of non-linear amplifiers
US6794937B1 (en) 2001-11-30 2004-09-21 Alcatel Predistortion linearizer and method for linearizing a nonlinear device
US6674335B1 (en) * 2002-06-28 2004-01-06 Qualcomm Incorporated Blind linearization using cross-modulation
ATE551773T1 (de) * 2003-02-20 2012-04-15 Sony Ericsson Mobile Comm Ab Effizienter modulation von hochfrequenzsignalen
US7719343B2 (en) 2003-09-08 2010-05-18 Peregrine Semiconductor Corporation Low noise charge pump method and apparatus
KR20050069152A (ko) * 2003-12-31 2005-07-05 동부아남반도체 주식회사 횡형 디모스 트랜지스터 소자
US7248120B2 (en) * 2004-06-23 2007-07-24 Peregrine Semiconductor Corporation Stacked transistor method and apparatus
JP4659826B2 (ja) 2004-06-23 2011-03-30 ペレグリン セミコンダクター コーポレーション Rfフロントエンド集積回路
KR20070043002A (ko) * 2004-08-12 2007-04-24 코닌클리케 필립스 일렉트로닉스 엔.브이. 듀얼모드 오디오 증폭기
GB2417626B (en) * 2004-08-26 2007-12-27 Renesas Tech Corp Transmitter and radio communication terminal using the same
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
JP4629524B2 (ja) * 2005-07-21 2011-02-09 フォスター電機株式会社 D級アンプ
US7773695B2 (en) 2005-08-19 2010-08-10 Dominic Kotab Amplitude modulator
JP4960449B2 (ja) * 2006-06-27 2012-06-27 テレフオンアクチーボラゲット エル エム エリクソン(パブル) スイッチモード電力増幅
EP1914886A1 (fr) * 2006-10-19 2008-04-23 Alcatel Lucent Amplificateur de puissance à multi-bandes
US7960772B2 (en) 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
JP5417346B2 (ja) 2008-02-28 2014-02-12 ペレグリン セミコンダクター コーポレーション 集積回路素子内でキャパシタをデジタル処理で同調するときに用いられる方法及び装置
EP2330735A3 (fr) 2008-07-18 2012-04-04 Peregrine Semiconductor Corporation Amplificateur opérationnel de transconductance
US9660590B2 (en) 2008-07-18 2017-05-23 Peregrine Semiconductor Corporation Low-noise high efficiency bias generation circuits and method
US8723260B1 (en) 2009-03-12 2014-05-13 Rf Micro Devices, Inc. Semiconductor radio frequency switch with body contact
US9166533B2 (en) 2009-07-30 2015-10-20 Qualcomm Incorporated Bias current monitor and control mechanism for amplifiers
KR101213778B1 (ko) 2011-01-11 2012-12-18 (주)펄서스 테크놀러지 노이즈 보상을 위한 전압 가변형 디지털 오디오 증폭 장치 및 그 방법
US8686787B2 (en) 2011-05-11 2014-04-01 Peregrine Semiconductor Corporation High voltage ring pump with inverter stages and voltage boosting stages
US9264053B2 (en) 2011-01-18 2016-02-16 Peregrine Semiconductor Corporation Variable frequency charge pump
US8310308B1 (en) * 2011-05-31 2012-11-13 Texas Instruments Incorporated Wide bandwidth class C amplifier with common-mode feedback
EP2654203A1 (fr) * 2012-04-20 2013-10-23 Alcatel-Lucent Circuit amplificateur, procédé et programme informatique permettant d'amplifier un signal de radiofréquence modulé
US8829967B2 (en) * 2012-06-27 2014-09-09 Triquint Semiconductor, Inc. Body-contacted partially depleted silicon on insulator transistor
US8729952B2 (en) 2012-08-16 2014-05-20 Triquint Semiconductor, Inc. Switching device with non-negative biasing
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
US8847672B2 (en) 2013-01-15 2014-09-30 Triquint Semiconductor, Inc. Switching device with resistive divider
US9214932B2 (en) 2013-02-11 2015-12-15 Triquint Semiconductor, Inc. Body-biased switching device
US8977217B1 (en) 2013-02-20 2015-03-10 Triquint Semiconductor, Inc. Switching device with negative bias circuit
US8923782B1 (en) 2013-02-20 2014-12-30 Triquint Semiconductor, Inc. Switching device with diode-biased field-effect transistor (FET)
US9203396B1 (en) 2013-02-22 2015-12-01 Triquint Semiconductor, Inc. Radio frequency switch device with source-follower
US20150236748A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Devices and Methods for Duplexer Loss Reduction
US9406695B2 (en) 2013-11-20 2016-08-02 Peregrine Semiconductor Corporation Circuit and method for improving ESD tolerance and switching speed
US9379698B2 (en) 2014-02-04 2016-06-28 Triquint Semiconductor, Inc. Field effect transistor switching circuit
US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
US9948281B2 (en) 2016-09-02 2018-04-17 Peregrine Semiconductor Corporation Positive logic digitally tunable capacitor
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3486128A (en) * 1968-02-07 1969-12-23 Us Army Power amplifier for amplitude modulated transmitter
US3900823A (en) * 1973-03-28 1975-08-19 Nathan O Sokal Amplifying and processing apparatus for modulated carrier signals
US4276514A (en) * 1979-07-09 1981-06-30 Trw Inc. Wideband, phase compensated amplifier with negative feedback of distortion components in the output signal
JPS6025310A (ja) * 1983-07-22 1985-02-08 Fujitsu Ltd Ssb多重無線装置用fet直線電力増幅装置
US4706262A (en) * 1984-03-30 1987-11-10 Nec Corporation FSK or FM burst signal generating apparatus
US4574248A (en) * 1984-05-07 1986-03-04 Rockwell International Corporation RF Power amplifier for use with VHF transceivers
GB2163311A (en) * 1984-08-17 1986-02-19 Philips Electronic Associated Bipolar transistor rf power amplifier
US4776036A (en) * 1986-02-25 1988-10-04 Varian Associates, Inc. RF-AM transmitter with pulse width modulator

Also Published As

Publication number Publication date
KR0135750B1 (ko) 1998-05-15
KR900013704A (ko) 1990-09-06
EP0385641A3 (fr) 1991-02-27
DE69015663D1 (de) 1995-02-16
SG30995G (en) 1995-08-18
FI97575B (fi) 1996-09-30
JPH07101821B2 (ja) 1995-11-01
CA2006683C (fr) 1995-06-20
JPH02291704A (ja) 1990-12-03
FI97575C (fi) 1997-01-10
EP0385641A2 (fr) 1990-09-05
US5105164A (en) 1992-04-14
FI900989A0 (fi) 1990-02-27
EP0385641B1 (fr) 1995-01-04
DE69015663T2 (de) 1995-05-18
CA2006683A1 (fr) 1990-08-31

Similar Documents

Publication Publication Date Title
EP0385641B1 (fr) Amplificateur de puissance UHF linéaire à haut rendement
US7062236B2 (en) Transmitter circuits
CA2035455C (fr) Emetteur lineaire
US6043707A (en) Method and apparatus for operating a radio-frequency power amplifier as a variable-class linear amplifier
EP1183776B1 (fr) Systemes et procedes de modulation de puissance destines a amplifier separement des parties a basse et haute frequence d'une forme d'onde d'amplitude
US7102427B2 (en) Amplifier and radio frequency power amplifier using the same
CN1111975C (zh) 用于无线发射机中的设备及方法
EP1563600B1 (fr) Systemes et procedes de commutation de polarisation dynamique pour amplificateurs de puissance radiofrequence
JP3698669B2 (ja) 極ループ送信回路
US5422598A (en) High-frequency power amplifier device with drain-control linearizer circuitry
US4532477A (en) Distortion compensation for a microwave amplifier
CA2259315C (fr) Dispositif et procede servant a corriger une distorsion de phase
US6522194B1 (en) Envelope restoration scheme for linear high-efficiency power amplification
US6624700B2 (en) Radio frequency power amplifier for cellular telephones
US4462004A (en) Dynamic class-4 FET amplifier
US4237555A (en) Automatic modulation system
US5247542A (en) QPSK power amplifier distortion correction system
JP2689011B2 (ja) 線形送信装置
US6424212B1 (en) Power amplifiers
US20020097089A1 (en) Predistortion-based amplifier, transmitter and envelope detector
US3740670A (en) Integral rf modamp
EP0926815A1 (fr) Circuit amplificateur de puissance linéaire à faible distorsion et à haut rendement pour signaux à haut rapport puissance de crête / puissance moyenne et méthode de commande pour un tel circuit
JPH0523612U (ja) 電力増幅器の直線性補償回路
JP2003017943A (ja) 振幅変調装置
Shirvani et al. RF Power Amplifier Control and Linearization Techniques

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)