HK5396A - A high efficiency UHF linear power amplifier - Google Patents
A high efficiency UHF linear power amplifier Download PDFInfo
- Publication number
- HK5396A HK5396A HK5396A HK5396A HK5396A HK 5396 A HK5396 A HK 5396A HK 5396 A HK5396 A HK 5396A HK 5396 A HK5396 A HK 5396A HK 5396 A HK5396 A HK 5396A
- Authority
- HK
- Hong Kong
- Prior art keywords
- signal
- envelope
- output
- circuit
- radio frequency
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0216—Continuous control
- H03F1/0222—Continuous control by using a signal derived from the input signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/15—Indexing scheme relating to amplifiers the supply or bias voltage or current at the drain side of a FET being continuously controlled by a controlling signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/192—A hybrid coupler being used at the input of an amplifier circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/204—A hybrid coupler being used at the output of an amplifier circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/228—A measuring circuit being coupled to the input of an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/267—A capacitor based passive circuit, e.g. filter, being used in an amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/351—Pulse width modulation being used in an amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/393—A measuring circuit being coupled to the output of an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/99—A diode as rectifier being used as a detecting circuit in an amplifying circuit
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Claims (11)
- Circuit pour amplifier un signal radioélectrique ayant une enveloppe variable, comprenant un dispositif d'amplification (110) des première, deuxième électrodes et une électrode de commande, une source de tension d'alimentation (VCC), un moyen (115) pour coupler la première électrode du dispositif d'amplification à une sortie, un moyen (120) pour former un signal de variation d'enveloppe à partir du signal radioélectrique, un moyen de modulation (140,145) comprenant une borne d'entrée et une paire de bornes de sortie couplées entre la source de tension d'alimentation et la première électrode du dispositif d'amplification pour moduler le signal sur la première électrode du dispositif d'amplification, un moyen (125) sensible au signal radioélectrique couplé à la sortie pour former un signal correspondant aux variations d'enveloppe du signal radioélectrique à la sortie, un moyen (130) sensible au signal de variation d'enveloppe et au signal correspondant aux variations d'enveloppe du signal radioélectrique à la sortie pour produire un signal représentatif de la différence entre eux, et un moyen (135) pour appliquer le signal de différence à la borne d'entrée du moyen de modulation pour réduire la distorsion des variations d'enveloppe à la sortie, et CARACTERISE PAR un dispositif de chargement (180) couplé à la sortie, et un moyen (105) pour former un signal radioélectrique d'amplitude constante et pour coupler le signal radioélectrique d'amplitude constante à l'électrode de commande du dispositif d'amplification.
- Circuit selon la revendication 1, dans lequel le dispositif d'amplification (110) est un dispositif d'amplification non linéaire ayant des première, seconde électrodes et une électrode de commande.
- Circuit selon la revendication 2, dans lequel le dispositif d'amplification non linéaire (110) est un dispositif amplificateur fonctionnant en classe C ayant une base, un émetteur et un collecteur.
- Circuit selon la revendication 3, dans lequel le moyen de modulation (140,145) comprend un modulateur de largeur d'impulsion (340).
- Circuit selon l'une quelconque des revendications précédentes, dans lequel le signal radioélectrique a une porteuse variant en angle, et le moyen pour former un signal radioélectrique d'amplitude constante sert à coupler la porteuse variant en angle à l'électrode de commande du dispositif d'amplification (310).
- Circuit selon la revendication 5, dans lequel la porteuse variant en angle est une porteuse variant en fréquence.
- Circuit selon la revendication 6, dans lequel la porteuse variant en fréquence comprend une pluralité de signaux variant en fréquence.
- Circuit selon la revendication 5, dans lequel les variations d'angle de porteuse sont des variations de phase.
- Circuit selon la revendication 8, dans lequel les variations de phase comprennent une modulation par déplacement de phase différentiel M-aire ayant des déphasages prédéfinis et les variations d'enveloppe sont des variations d'enveloppe entre les déplacements de phase prédéfinis de la modulation MDPDM.
- Circuit selon la revendication 1, dans lequel le moyen de modulation (140,145) comprend un modulateur de largeur d'impulsion (140) et un moyen de filtre (145) couplé entre le modulateur de largeur d'impulsion et la première électrode pour supprimer les parties haute fréquence de la sortie du modulateur de largeur d'impulsion.
- Circuit selon l'une quelconque des revendications précédentes, dans lequel le moyen (120) pour former le signal de variation d'enveloppe comprend une première diode (570) et un moyen (574,576) pour polariser la première diode, le moyen (125) pour former le signal correspondant aux variations d'enveloppe du signal radioélectrique à la sortie comprend une seconde diode (560) et un moyen (564,567) pour polariser la seconde diode, et les moyens (564,567,574,576) pour polariser les première et seconde diodes (560,570) sont réglés pour maintenir les première et seconde diodes (560,570) à des caractéristiques de fonctionnement substantiellement semblables.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/316,891 US5105164A (en) | 1989-02-28 | 1989-02-28 | High efficiency uhf linear power amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK5396A true HK5396A (en) | 1996-01-19 |
Family
ID=23231154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK5396A HK5396A (en) | 1989-02-28 | 1996-01-11 | A high efficiency UHF linear power amplifier |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5105164A (fr) |
| EP (1) | EP0385641B1 (fr) |
| JP (1) | JPH07101821B2 (fr) |
| KR (1) | KR0135750B1 (fr) |
| CA (1) | CA2006683C (fr) |
| DE (1) | DE69015663T2 (fr) |
| FI (1) | FI97575C (fr) |
| HK (1) | HK5396A (fr) |
| SG (1) | SG30995G (fr) |
Families Citing this family (72)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5668837A (en) * | 1993-10-14 | 1997-09-16 | Ericsson Inc. | Dual-mode radio receiver for receiving narrowband and wideband signals |
| DE4497810B4 (de) * | 1993-10-14 | 2009-10-08 | Ericsson - Ge Mobile Communications Inc. | Funkempfänder und Verfahren zum Demodulieren sowohl von breitbandigen frequenzmodulieten Signalen, als auch von schmalbandigen frequenzmodulierten Signalen |
| US5365187A (en) * | 1993-10-29 | 1994-11-15 | Hewlett-Packard Company | Power amplifier utilizing the vector addition of two constant envelope carriers |
| GB2301751B (en) | 1995-06-02 | 2000-02-09 | Dsc Communications | Control message transmission in telecommunications systems |
| US5732333A (en) * | 1996-02-14 | 1998-03-24 | Glenayre Electronics, Inc. | Linear transmitter using predistortion |
| US5847602A (en) * | 1997-03-03 | 1998-12-08 | Hewlett-Packard Company | Method and apparatus for linearizing an efficient class D/E power amplifier using delta modulation |
| US5886572A (en) * | 1997-07-25 | 1999-03-23 | Motorola, Inc. | Method and apparatus for reducing distortion in a power amplifier |
| US6141541A (en) * | 1997-12-31 | 2000-10-31 | Motorola, Inc. | Method, device, phone and base station for providing envelope-following for variable envelope radio frequency signals |
| US6078628A (en) * | 1998-03-13 | 2000-06-20 | Conexant Systems, Inc. | Non-linear constant envelope modulator and transmit architecture |
| US6133792A (en) * | 1998-09-17 | 2000-10-17 | Telefonakteibolaget Lm Ericsson | Method and apparatus for preventing power amplifier saturation |
| FI105609B (fi) | 1998-10-27 | 2000-09-15 | Nokia Mobile Phones Ltd | Menetelmä ja järjestely lähetyssignaalin muodostamiseksi |
| EP1017162A3 (fr) * | 1998-12-30 | 2003-07-16 | Texas Instruments Incorporated | Circuit amplificateur à boucle de contre-réaction négative pour réduire la distortion |
| EP1028522A1 (fr) * | 1999-02-10 | 2000-08-16 | Semiconductor Ideas to The Market (ItoM) BV | Dispositif de communication |
| US6590940B1 (en) * | 1999-05-17 | 2003-07-08 | Ericsson Inc. | Power modulation systems and methods that separately amplify low and high frequency portions of an amplitude waveform |
| US6252455B1 (en) * | 1999-10-07 | 2001-06-26 | Motorola, Inc. | Method and apparatus for efficient signal amplification |
| EP1096670A3 (fr) * | 1999-10-08 | 2003-10-29 | M/A-Com Eurotec | Système et procédé de transmission des informations numériques utilisant la modulation delta entrelacée |
| US6813319B1 (en) * | 1999-10-08 | 2004-11-02 | M/A-Com Eurotec | System and method for transmitting digital information using interleaved delta modulation |
| GB2356756B (en) * | 1999-11-25 | 2004-08-11 | Ericsson Telefon Ab L M | Power amplifiers |
| GB2359681B (en) | 2000-02-25 | 2004-03-10 | Wireless Systems Int Ltd | Switched amplifier |
| JP2002009556A (ja) * | 2000-06-16 | 2002-01-11 | Sony Corp | 歪補償装置及び歪補償方法 |
| US8149062B2 (en) | 2000-09-12 | 2012-04-03 | Black Sand Technologies, Inc. | Power amplifier circuitry having inductive networks |
| US6549071B1 (en) | 2000-09-12 | 2003-04-15 | Silicon Laboratories, Inc. | Power amplifier circuitry and method using an inductance coupled to power amplifier switching devices |
| US7796969B2 (en) | 2001-10-10 | 2010-09-14 | Peregrine Semiconductor Corporation | Symmetrically and asymmetrically stacked transistor group RF switch |
| US6804502B2 (en) | 2001-10-10 | 2004-10-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
| US7058369B1 (en) | 2001-11-21 | 2006-06-06 | Pmc-Sierra Inc. | Constant gain digital predistortion controller for linearization of non-linear amplifiers |
| US6794937B1 (en) | 2001-11-30 | 2004-09-21 | Alcatel | Predistortion linearizer and method for linearizing a nonlinear device |
| US6674335B1 (en) * | 2002-06-28 | 2004-01-06 | Qualcomm Incorporated | Blind linearization using cross-modulation |
| ATE551773T1 (de) * | 2003-02-20 | 2012-04-15 | Sony Ericsson Mobile Comm Ab | Effizienter modulation von hochfrequenzsignalen |
| US7719343B2 (en) | 2003-09-08 | 2010-05-18 | Peregrine Semiconductor Corporation | Low noise charge pump method and apparatus |
| KR20050069152A (ko) * | 2003-12-31 | 2005-07-05 | 동부아남반도체 주식회사 | 횡형 디모스 트랜지스터 소자 |
| US7248120B2 (en) * | 2004-06-23 | 2007-07-24 | Peregrine Semiconductor Corporation | Stacked transistor method and apparatus |
| JP4659826B2 (ja) | 2004-06-23 | 2011-03-30 | ペレグリン セミコンダクター コーポレーション | Rfフロントエンド集積回路 |
| KR20070043002A (ko) * | 2004-08-12 | 2007-04-24 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 듀얼모드 오디오 증폭기 |
| GB2417626B (en) * | 2004-08-26 | 2007-12-27 | Renesas Tech Corp | Transmitter and radio communication terminal using the same |
| US7910993B2 (en) | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
| US8742502B2 (en) | 2005-07-11 | 2014-06-03 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| US7890891B2 (en) | 2005-07-11 | 2011-02-15 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| USRE48965E1 (en) | 2005-07-11 | 2022-03-08 | Psemi Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US20080076371A1 (en) | 2005-07-11 | 2008-03-27 | Alexander Dribinsky | Circuit and method for controlling charge injection in radio frequency switches |
| US9653601B2 (en) | 2005-07-11 | 2017-05-16 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| JP4629524B2 (ja) * | 2005-07-21 | 2011-02-09 | フォスター電機株式会社 | D級アンプ |
| US7773695B2 (en) | 2005-08-19 | 2010-08-10 | Dominic Kotab | Amplitude modulator |
| JP4960449B2 (ja) * | 2006-06-27 | 2012-06-27 | テレフオンアクチーボラゲット エル エム エリクソン(パブル) | スイッチモード電力増幅 |
| EP1914886A1 (fr) * | 2006-10-19 | 2008-04-23 | Alcatel Lucent | Amplificateur de puissance à multi-bandes |
| US7960772B2 (en) | 2007-04-26 | 2011-06-14 | Peregrine Semiconductor Corporation | Tuning capacitance to enhance FET stack voltage withstand |
| JP5417346B2 (ja) | 2008-02-28 | 2014-02-12 | ペレグリン セミコンダクター コーポレーション | 集積回路素子内でキャパシタをデジタル処理で同調するときに用いられる方法及び装置 |
| EP2330735A3 (fr) | 2008-07-18 | 2012-04-04 | Peregrine Semiconductor Corporation | Amplificateur opérationnel de transconductance |
| US9660590B2 (en) | 2008-07-18 | 2017-05-23 | Peregrine Semiconductor Corporation | Low-noise high efficiency bias generation circuits and method |
| US8723260B1 (en) | 2009-03-12 | 2014-05-13 | Rf Micro Devices, Inc. | Semiconductor radio frequency switch with body contact |
| US9166533B2 (en) | 2009-07-30 | 2015-10-20 | Qualcomm Incorporated | Bias current monitor and control mechanism for amplifiers |
| KR101213778B1 (ko) | 2011-01-11 | 2012-12-18 | (주)펄서스 테크놀러지 | 노이즈 보상을 위한 전압 가변형 디지털 오디오 증폭 장치 및 그 방법 |
| US8686787B2 (en) | 2011-05-11 | 2014-04-01 | Peregrine Semiconductor Corporation | High voltage ring pump with inverter stages and voltage boosting stages |
| US9264053B2 (en) | 2011-01-18 | 2016-02-16 | Peregrine Semiconductor Corporation | Variable frequency charge pump |
| US8310308B1 (en) * | 2011-05-31 | 2012-11-13 | Texas Instruments Incorporated | Wide bandwidth class C amplifier with common-mode feedback |
| EP2654203A1 (fr) * | 2012-04-20 | 2013-10-23 | Alcatel-Lucent | Circuit amplificateur, procédé et programme informatique permettant d'amplifier un signal de radiofréquence modulé |
| US8829967B2 (en) * | 2012-06-27 | 2014-09-09 | Triquint Semiconductor, Inc. | Body-contacted partially depleted silicon on insulator transistor |
| US8729952B2 (en) | 2012-08-16 | 2014-05-20 | Triquint Semiconductor, Inc. | Switching device with non-negative biasing |
| US9590674B2 (en) | 2012-12-14 | 2017-03-07 | Peregrine Semiconductor Corporation | Semiconductor devices with switchable ground-body connection |
| US8847672B2 (en) | 2013-01-15 | 2014-09-30 | Triquint Semiconductor, Inc. | Switching device with resistive divider |
| US9214932B2 (en) | 2013-02-11 | 2015-12-15 | Triquint Semiconductor, Inc. | Body-biased switching device |
| US8977217B1 (en) | 2013-02-20 | 2015-03-10 | Triquint Semiconductor, Inc. | Switching device with negative bias circuit |
| US8923782B1 (en) | 2013-02-20 | 2014-12-30 | Triquint Semiconductor, Inc. | Switching device with diode-biased field-effect transistor (FET) |
| US9203396B1 (en) | 2013-02-22 | 2015-12-01 | Triquint Semiconductor, Inc. | Radio frequency switch device with source-follower |
| US20150236748A1 (en) | 2013-03-14 | 2015-08-20 | Peregrine Semiconductor Corporation | Devices and Methods for Duplexer Loss Reduction |
| US9406695B2 (en) | 2013-11-20 | 2016-08-02 | Peregrine Semiconductor Corporation | Circuit and method for improving ESD tolerance and switching speed |
| US9379698B2 (en) | 2014-02-04 | 2016-06-28 | Triquint Semiconductor, Inc. | Field effect transistor switching circuit |
| US9831857B2 (en) | 2015-03-11 | 2017-11-28 | Peregrine Semiconductor Corporation | Power splitter with programmable output phase shift |
| US9948281B2 (en) | 2016-09-02 | 2018-04-17 | Peregrine Semiconductor Corporation | Positive logic digitally tunable capacitor |
| US10886911B2 (en) | 2018-03-28 | 2021-01-05 | Psemi Corporation | Stacked FET switch bias ladders |
| US10236872B1 (en) | 2018-03-28 | 2019-03-19 | Psemi Corporation | AC coupling modules for bias ladders |
| US10505530B2 (en) | 2018-03-28 | 2019-12-10 | Psemi Corporation | Positive logic switch with selectable DC blocking circuit |
| US11476849B2 (en) | 2020-01-06 | 2022-10-18 | Psemi Corporation | High power positive logic switch |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3486128A (en) * | 1968-02-07 | 1969-12-23 | Us Army | Power amplifier for amplitude modulated transmitter |
| US3900823A (en) * | 1973-03-28 | 1975-08-19 | Nathan O Sokal | Amplifying and processing apparatus for modulated carrier signals |
| US4276514A (en) * | 1979-07-09 | 1981-06-30 | Trw Inc. | Wideband, phase compensated amplifier with negative feedback of distortion components in the output signal |
| JPS6025310A (ja) * | 1983-07-22 | 1985-02-08 | Fujitsu Ltd | Ssb多重無線装置用fet直線電力増幅装置 |
| US4706262A (en) * | 1984-03-30 | 1987-11-10 | Nec Corporation | FSK or FM burst signal generating apparatus |
| US4574248A (en) * | 1984-05-07 | 1986-03-04 | Rockwell International Corporation | RF Power amplifier for use with VHF transceivers |
| GB2163311A (en) * | 1984-08-17 | 1986-02-19 | Philips Electronic Associated | Bipolar transistor rf power amplifier |
| US4776036A (en) * | 1986-02-25 | 1988-10-04 | Varian Associates, Inc. | RF-AM transmitter with pulse width modulator |
-
1989
- 1989-02-28 US US07/316,891 patent/US5105164A/en not_active Expired - Lifetime
- 1989-12-27 CA CA002006683A patent/CA2006683C/fr not_active Expired - Lifetime
-
1990
- 1990-02-21 EP EP90301848A patent/EP0385641B1/fr not_active Expired - Lifetime
- 1990-02-21 DE DE69015663T patent/DE69015663T2/de not_active Expired - Fee Related
- 1990-02-26 JP JP2044294A patent/JPH07101821B2/ja not_active Expired - Fee Related
- 1990-02-27 KR KR1019900002560A patent/KR0135750B1/ko not_active Expired - Lifetime
- 1990-02-27 FI FI900989A patent/FI97575C/fi not_active IP Right Cessation
-
1995
- 1995-02-22 SG SG30995A patent/SG30995G/en unknown
-
1996
- 1996-01-11 HK HK5396A patent/HK5396A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR0135750B1 (ko) | 1998-05-15 |
| KR900013704A (ko) | 1990-09-06 |
| EP0385641A3 (fr) | 1991-02-27 |
| DE69015663D1 (de) | 1995-02-16 |
| SG30995G (en) | 1995-08-18 |
| FI97575B (fi) | 1996-09-30 |
| JPH07101821B2 (ja) | 1995-11-01 |
| CA2006683C (fr) | 1995-06-20 |
| JPH02291704A (ja) | 1990-12-03 |
| FI97575C (fi) | 1997-01-10 |
| EP0385641A2 (fr) | 1990-09-05 |
| US5105164A (en) | 1992-04-14 |
| FI900989A0 (fi) | 1990-02-27 |
| EP0385641B1 (fr) | 1995-01-04 |
| DE69015663T2 (de) | 1995-05-18 |
| CA2006683A1 (fr) | 1990-08-31 |
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