ID18292A - Penghilangan karbon dari permukaan substrat - Google Patents

Penghilangan karbon dari permukaan substrat

Info

Publication number
ID18292A
ID18292A IDP971042A ID971042A ID18292A ID 18292 A ID18292 A ID 18292A ID P971042 A IDP971042 A ID P971042A ID 971042 A ID971042 A ID 971042A ID 18292 A ID18292 A ID 18292A
Authority
ID
Indonesia
Prior art keywords
substrate surfaces
carbon elimination
elimination
carbon
substrate
Prior art date
Application number
IDP971042A
Other languages
English (en)
Inventor
Arthur Edward Holmer
Michael Mark Litwin
Kevin Bruce Albaugh
Original Assignee
Praxair Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Praxair Technology Inc filed Critical Praxair Technology Inc
Publication of ID18292A publication Critical patent/ID18292A/id

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation
IDP971042A 1996-03-29 1997-03-27 Penghilangan karbon dari permukaan substrat ID18292A (id)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/625,673 US5998305A (en) 1996-03-29 1996-03-29 Removal of carbon from substrate surfaces

Publications (1)

Publication Number Publication Date
ID18292A true ID18292A (id) 1998-03-26

Family

ID=24507098

Family Applications (1)

Application Number Title Priority Date Filing Date
IDP971042A ID18292A (id) 1996-03-29 1997-03-27 Penghilangan karbon dari permukaan substrat

Country Status (8)

Country Link
US (2) US5998305A (id)
EP (1) EP0798767B1 (id)
JP (1) JP3367859B2 (id)
KR (1) KR100356567B1 (id)
CN (1) CN1113393C (id)
DE (1) DE69726634T2 (id)
ID (1) ID18292A (id)
IL (1) IL120522A (id)

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US8367528B2 (en) 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
US9885123B2 (en) 2011-03-16 2018-02-06 Asm America, Inc. Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US9169155B2 (en) * 2012-05-03 2015-10-27 Guardian Industries Corp. Method and apparatus for making vacuum insulated glass (VIG) window unit including cleaning cavity thereof
US8871108B2 (en) 2013-01-22 2014-10-28 Tel Fsi, Inc. Process for removing carbon material from substrates
US9017934B2 (en) * 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10847360B2 (en) 2017-05-25 2020-11-24 Applied Materials, Inc. High pressure treatment of silicon nitride film
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
WO2018222771A1 (en) * 2017-06-02 2018-12-06 Applied Materials, Inc. Dry stripping of boron carbide hardmask
US10269571B2 (en) 2017-07-12 2019-04-23 Applied Materials, Inc. Methods for fabricating nanowire for semiconductor applications
US10234630B2 (en) 2017-07-12 2019-03-19 Applied Materials, Inc. Method for creating a high refractive index wave guide
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US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
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KR102622303B1 (ko) 2017-11-16 2024-01-05 어플라이드 머티어리얼스, 인코포레이티드 고압 스팀 어닐링 프로세싱 장치
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
JP7299898B2 (ja) 2018-01-24 2023-06-28 アプライド マテリアルズ インコーポレイテッド 高圧アニールを用いたシーム修復
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CN112640065B (zh) 2018-10-30 2024-10-01 应用材料公司 用于蚀刻用于半导体应用的结构的方法
WO2020101935A1 (en) 2018-11-16 2020-05-22 Applied Materials, Inc. Film deposition using enhanced diffusion process
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Also Published As

Publication number Publication date
DE69726634T2 (de) 2004-09-30
KR970067682A (ko) 1997-10-13
EP0798767A3 (en) 1998-03-11
IL120522A (en) 2003-09-17
US6242368B1 (en) 2001-06-05
US5998305A (en) 1999-12-07
CN1166051A (zh) 1997-11-26
KR100356567B1 (ko) 2002-12-18
DE69726634D1 (de) 2004-01-22
JP3367859B2 (ja) 2003-01-20
IL120522A0 (en) 1997-07-13
EP0798767A2 (en) 1997-10-01
CN1113393C (zh) 2003-07-02
JPH1032193A (ja) 1998-02-03
EP0798767B1 (en) 2003-12-10

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