ID26364A - Polimer polisiklik yang dimodifikasi - Google Patents

Polimer polisiklik yang dimodifikasi

Info

Publication number
ID26364A
ID26364A IDW20001890A ID20001890A ID26364A ID 26364 A ID26364 A ID 26364A ID W20001890 A IDW20001890 A ID W20001890A ID 20001890 A ID20001890 A ID 20001890A ID 26364 A ID26364 A ID 26364A
Authority
ID
Indonesia
Prior art keywords
polymers
moiety
functional group
post
pendant
Prior art date
Application number
IDW20001890A
Other languages
English (en)
Indonesian (id)
Inventor
Saikumar Jayaraman
George M Benedikt
Larry F Rhodes
Richard Vicari
Robert D Allen
Richard A Dipietro
Ratnam Sooriyakumaran
Thomas Wallow
Original Assignee
B F Goodrich Company Cs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by B F Goodrich Company Cs filed Critical B F Goodrich Company Cs
Publication of ID26364A publication Critical patent/ID26364A/id

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
    • C08G61/08—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds of carbocyclic compounds containing one or more carbon-to-carbon double bonds in the ring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
IDW20001890A 1998-02-23 1999-02-19 Polimer polisiklik yang dimodifikasi ID26364A (id)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7555898P 1998-02-23 1998-02-23

Publications (1)

Publication Number Publication Date
ID26364A true ID26364A (id) 2000-12-14

Family

ID=22126537

Family Applications (1)

Application Number Title Priority Date Filing Date
IDW20001890A ID26364A (id) 1998-02-23 1999-02-19 Polimer polisiklik yang dimodifikasi

Country Status (11)

Country Link
US (2) US6451945B1 (de)
EP (1) EP1060206B1 (de)
JP (1) JP2002504577A (de)
KR (1) KR100555605B1 (de)
CN (1) CN1315906C (de)
AT (1) ATE264352T1 (de)
AU (1) AU2872499A (de)
DE (1) DE69916434T2 (de)
ID (1) ID26364A (de)
TW (1) TW565575B (de)
WO (1) WO1999042510A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU3303599A (en) * 1998-02-23 1999-09-06 B.F. Goodrich Company, The Polycyclic resist compositions with increased etch resistance
JP4714955B2 (ja) * 1999-09-29 2011-07-06 日本ゼオン株式会社 環状オレフィン系付加重合体およびその製造方法
JP3734012B2 (ja) * 1999-10-25 2006-01-11 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP5095048B2 (ja) * 1999-11-15 2012-12-12 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
KR100389912B1 (ko) * 1999-12-08 2003-07-04 삼성전자주식회사 지환식 감광성 폴리머 및 이를 포함하는 레지스트 조성물
US6406828B1 (en) * 2000-02-24 2002-06-18 Shipley Company, L.L.C. Polymer and photoresist compositions
EP1127899A1 (de) * 2000-02-25 2001-08-29 Shipley Company LLC Polymer umd Photoresistzusammensetzungen
EP1130468A3 (de) * 2000-02-25 2003-07-30 Shipley Company LLC Polymer und Photolackzusammensetzungen
JP4544389B2 (ja) * 2000-04-28 2010-09-15 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US20040009424A1 (en) * 2002-03-01 2004-01-15 Mass Institute Of Technology (Mit) Protecting groups for lithographic resist compositions
US6756180B2 (en) 2002-10-22 2004-06-29 International Business Machines Corporation Cyclic olefin-based resist compositions having improved image stability
US20050058606A1 (en) * 2002-12-16 2005-03-17 Boehringer Ingelheim Pharma Gmbh & Co. Kg Tiotropium containing HFC solution formulations
JP2006083361A (ja) * 2003-10-24 2006-03-30 Jsr Corp アイオノマー及びその製造方法並びに成形品
US20070112158A1 (en) * 2003-11-18 2007-05-17 Jsr Corporation Novel (co)polymer, process for producing the same, and process for producing carboxylated (co)polymer
JP2005171234A (ja) * 2003-11-18 2005-06-30 Jsr Corp 新規な（共）重合体およびその製造方法並びにカルボキシル基含有（共）重合体の製造方法
US7101654B2 (en) * 2004-01-14 2006-09-05 Promerus Llc Norbornene-type monomers and polymers containing pendent lactone or sultone groups
US7147986B2 (en) * 2004-03-31 2006-12-12 Intel Corporation Resist compounds including acid labile groups attached to polymeric chains at anhydride linkages
JP2007131704A (ja) 2005-11-09 2007-05-31 Fujifilm Corp 環状オレフィン系重合体、およびそれを用いた光学材料、偏光板および液晶表示装置
US7727705B2 (en) * 2007-02-23 2010-06-01 Fujifilm Electronic Materials, U.S.A., Inc. High etch resistant underlayer compositions for multilayer lithographic processes
US8753790B2 (en) * 2009-07-01 2014-06-17 Promerus, Llc Self-imageable film forming polymer, compositions thereof and devices and structures made therefrom
JP5117484B2 (ja) * 2009-12-28 2013-01-16 東京応化工業株式会社 新規な化合物、及びその製造方法
US10623846B2 (en) * 2016-12-06 2020-04-14 Bose Corporation Earpieces employing viscoelastic materials

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6052845A (ja) * 1983-09-02 1985-03-26 Japan Synthetic Rubber Co Ltd パタ−ン形成材料
US5340696A (en) * 1993-01-29 1994-08-23 Shipley Company Inc. Photoresist compositions with copolymer binder having phenolic and nonaromatic cyclic alcohol units where the distribution of the cyclic alcohol concentration is less than 8 mole percent
JPH07140666A (ja) * 1993-06-04 1995-06-02 Internatl Business Mach Corp <Ibm> マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物
US5912313A (en) * 1995-11-22 1999-06-15 The B. F. Goodrich Company Addition polymers of polycycloolefins containing silyl functional groups
JP3804138B2 (ja) 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
WO1997033198A1 (en) * 1996-03-07 1997-09-12 The B.F. Goodrich Company Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
AU3303599A (en) * 1998-02-23 1999-09-06 B.F. Goodrich Company, The Polycyclic resist compositions with increased etch resistance

Also Published As

Publication number Publication date
HK1036290A1 (en) 2001-12-28
KR100555605B1 (ko) 2006-03-03
EP1060206B1 (de) 2004-04-14
WO1999042510A1 (en) 1999-08-26
TW565575B (en) 2003-12-11
US6451945B1 (en) 2002-09-17
AU2872499A (en) 1999-09-06
JP2002504577A (ja) 2002-02-12
KR20010041217A (ko) 2001-05-15
DE69916434D1 (de) 2004-05-19
ATE264352T1 (de) 2004-04-15
CN1295587A (zh) 2001-05-16
US20030018153A1 (en) 2003-01-23
US6794459B2 (en) 2004-09-21
CN1315906C (zh) 2007-05-16
DE69916434T2 (de) 2005-03-24
EP1060206A1 (de) 2000-12-20

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